Disputationer
Ti 19 februari
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19
februari
tisdag, 10:00
Disputationer
Integration of silicide nanowires as Schottky barrier source/drain in FinFETs
Fasta tillståndets elektronik
Plats: Sal N1, KTH-Electrum 3, Isafjordsgatan 28 A/D, Kista
Respondent: Zhen Zhang
2008-02-19T10:00
2008-02-19T10:00
Integration of silicide nanowires as Schottky barrier source/drain in FinFETs (Disputationer)
Integration of silicide nanowires as Schottky barrier source/drain in FinFETs (Disputationer)