Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

Tid: Må 2015-10-12 kl 10.15

Plats: Kollegiesalen, Brinellvägen 8, KTH, Stockholm

Ämnesområde: Electrical Systems

Respondent: Jang-Kwon Lim , Electrical Energy Conversion

Opponent: Professor Ichiro Omura, Kyushu Institute of Technology, JP

Handledare: Professor Hans-Peter Nee