Class information for:
Level 1: PARASITIC REACTION//CVD REACTOR//MOCVD REACTOR

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
10693 975 21.8 54%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
2847 2446 INTERFACIAL SHEARS//MICROBENDING LOSS//RAPID THERMAL PROCESSING RTP

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 PARASITIC REACTION Author keyword 5 60% 1% 6
2 CVD REACTOR Author keyword 4 50% 1% 6
3 MOCVD REACTOR Author keyword 3 100% 0% 3
4 VERTICAL ROTATING DISK REACTOR Author keyword 3 100% 0% 3
5 SILICON EPITAXIAL GROWTH Author keyword 2 38% 1% 5
6 BARREL REACTOR Author keyword 2 67% 0% 2
7 CLOSE SPACED VERTICAL REACTOR Author keyword 2 67% 0% 2
8 EQUIPMENT SIMULATION Author keyword 2 67% 0% 2
9 FUNDAMENTAL SCI DEF WIDE BAND G SE Address 2 67% 0% 2
10 LPCVD FURNACE Author keyword 2 67% 0% 2

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class		 LCSH search Wikipedia search
1 PARASITIC REACTION 5 60% 1% 6 Search PARASITIC+REACTION Search PARASITIC+REACTION
2 CVD REACTOR 4 50% 1% 6 Search CVD+REACTOR Search CVD+REACTOR
3 MOCVD REACTOR 3 100% 0% 3 Search MOCVD+REACTOR Search MOCVD+REACTOR
4 VERTICAL ROTATING DISK REACTOR 3 100% 0% 3 Search VERTICAL+ROTATING+DISK+REACTOR Search VERTICAL+ROTATING+DISK+REACTOR
5 SILICON EPITAXIAL GROWTH 2 38% 1% 5 Search SILICON+EPITAXIAL+GROWTH Search SILICON+EPITAXIAL+GROWTH
6 BARREL REACTOR 2 67% 0% 2 Search BARREL+REACTOR Search BARREL+REACTOR
7 CLOSE SPACED VERTICAL REACTOR 2 67% 0% 2 Search CLOSE+SPACED+VERTICAL+REACTOR Search CLOSE+SPACED+VERTICAL+REACTOR
8 EQUIPMENT SIMULATION 2 67% 0% 2 Search EQUIPMENT+SIMULATION Search EQUIPMENT+SIMULATION
9 LPCVD FURNACE 2 67% 0% 2 Search LPCVD+FURNACE Search LPCVD+FURNACE
10 MULTIWAFER REACTOR 2 67% 0% 2 Search MULTIWAFER+REACTOR Search MULTIWAFER+REACTOR

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 MOCVD REACTORS 54 75% 4% 39
2 WALL TUBULAR REACTORS 32 85% 2% 17
3 HORIZONTAL REACTORS 19 80% 1% 12
4 COMPLEX FLOW PHENOMENA 17 79% 1% 11
5 CVD REACTORS 17 72% 1% 13
6 LPCVD REACTORS 15 88% 1% 7
7 OMVPE REACTOR 15 88% 1% 7
8 VAPOR DEPOSITION REACTOR 13 51% 2% 18
9 DISK OMVPE REACTORS 11 78% 1% 7
10 SINGLE WAFER REACTOR 9 40% 2% 17

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
FLOW PHENOMENA IN CHEMICAL VAPOR-DEPOSITION OF THIN-FILMS 1991 108 63 67%
DESIGN AND MODELING OF CHEMICAL VAPOR-DEPOSITION REACTORS 1992 28 96 75%
MODELING AND CONTROL OF MICROELECTRONICS MATERIALS PROCESSING 1995 31 105 34%
Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications 2013 12 159 13%
Kinetic approach to materials synthesis by gas-phase deposition 1998 11 60 57%
Fluid-dynamics during vapor epitaxy and modeling 2003 6 34 94%
Chemical vapour deposition of coatings 2003 524 205 6%
The metal organic vapour phase epitaxy of ZnTe .2. Analysis of growth conditions 1995 8 27 33%
Chemical engineering aspects of advanced ceramic materials 1996 39 84 20%
Process modelling in metal-organic vapour phase epitaxy 1997 0 13 69%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 FUNDAMENTAL SCI DEF WIDE BAND G SE 2 67% 0.2% 2
2 DIPARTIMENTO CHIM FIS PLICATA 2 14% 1.1% 11
3 EPITAXIAL SILICON TECHNOL 1 100% 0.2% 2
4 TOURISM DESIGN 1 100% 0.2% 2
5 ISOBE RD 1 25% 0.4% 4
6 CHIM MAT INGN CHIM 1 33% 0.2% 2
7 PARALLEL COMPUTAT SCI 1 23% 0.3% 3
8 CHIM MAT INGN CHIM G NATTA 1 17% 0.4% 4
9 CNRS UPR 8001 1 50% 0.1% 1
10 CORPORATE MFG ENGN 1 50% 0.1% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000147232 TRIMETHYLINDIUM//CHEMICAL BEAM EPITAXY CBE//MOLECULAR LAYER EPITAXY
2 0.0000139095 ATOMIC LAYER DOPING//SI EPITAXIAL GROWTH//GERMANIUM SILICON COMPOUNDS
3 0.0000133474 CVD W//FEATURE SCALE MODEL//FOCUS NEW YORK
4 0.0000119104 RAPID THERMAL PROCESSING RTP//RAPID THERMAL PROCESSING//CTOD FRACTURE TOUGHNESS TESTING
5 0.0000100666 ELECTROCHEMICAL VAPOR DEPOSITION//BETA DIKETONE METAL CHELATES//COLD PLASMA PROCESS
6 0.0000093787 MIXED CONVECTION//VERTICAL FLAT CHANNEL//INCLINED DUCT
7 0.0000080816 ISOTHERMAL CHEMICAL VAPOR INFILTRATION//PRESSURE PULSED CHEMICAL VAPOR INFILTRATION//3D IMAGE BASED MODELING
8 0.0000079874 SIPOS//MSOS O P STRUCTURE//SEMI INSULATING POLYCRYSTALLINE SILICON
9 0.0000076838 ING ELECT SEES//SECC PUEBLA//ALLOY SOURCE
10 0.0000068606 1 3 DISILACYCLOBUTANE//LASER CHEM GRP//SPIRO SI HETEROCYCLIC RING COMPOUND