Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 11137 | 939 | 19.7 | 83% |
Classes in level above (level 2) |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | SI111 SUBSTRATES | Author keyword | 9 | 83% | 1% | 5 |
| 2 | SI111 SUBSTRATE | Author keyword | 5 | 50% | 1% | 7 |
| 3 | ALN BUFFER | Author keyword | 5 | 41% | 1% | 9 |
| 4 | FNW IEP AHE | Address | 4 | 75% | 0% | 3 |
| 5 | GAN SI111 | Author keyword | 4 | 75% | 0% | 3 |
| 6 | ENGN LED SI SUBSTRATE | Address | 3 | 100% | 0% | 3 |
| 7 | MALAYSIAN IND TECHNOL MITEC | Address | 3 | 60% | 0% | 3 |
| 8 | ALGAN INTERLAYER | Author keyword | 2 | 67% | 0% | 2 |
| 9 | RECH HETERO EXPITAXIE PLICAT | Address | 2 | 67% | 0% | 2 |
| 10 | GAN ON SI | Author keyword | 2 | 18% | 1% | 11 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | SI111 SUBSTRATES | 9 | 83% | 1% | 5 | Search SI111+SUBSTRATES | Search SI111+SUBSTRATES |
| 2 | SI111 SUBSTRATE | 5 | 50% | 1% | 7 | Search SI111+SUBSTRATE | Search SI111+SUBSTRATE |
| 3 | ALN BUFFER | 5 | 41% | 1% | 9 | Search ALN+BUFFER | Search ALN+BUFFER |
| 4 | GAN SI111 | 4 | 75% | 0% | 3 | Search GAN+SI111 | Search GAN+SI111 |
| 5 | ALGAN INTERLAYER | 2 | 67% | 0% | 2 | Search ALGAN+INTERLAYER | Search ALGAN+INTERLAYER |
| 6 | GAN ON SI | 2 | 18% | 1% | 11 | Search GAN+ON+SI | Search GAN+ON+SI |
| 7 | HOT MESH CVD | 2 | 43% | 0% | 3 | Search HOT+MESH+CVD | Search HOT+MESH+CVD |
| 8 | SI 111 SUBSTRATE | 2 | 43% | 0% | 3 | Search SI+111+SUBSTRATE | Search SI+111+SUBSTRATE |
| 9 | AIN GAN MULTILAYERS | 1 | 100% | 0% | 2 | Search AIN+GAN+MULTILAYERS | Search AIN+GAN+MULTILAYERS |
| 10 | AIN LAYER | 1 | 100% | 0% | 2 | Search AIN+LAYER | Search AIN+LAYER |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | INTERMEDIATE LAYER | 57 | 45% | 10% | 96 |
| 2 | SINGLE CRYSTALLINE GAN | 43 | 61% | 5% | 46 |
| 3 | CRACK FREE GAN | 33 | 77% | 2% | 23 |
| 4 | TEMPERATURE ALN INTERLAYERS | 27 | 70% | 2% | 23 |
| 5 | HIGH QUALITY GAN | 26 | 38% | 6% | 53 |
| 6 | STRESS CONTROL | 21 | 65% | 2% | 20 |
| 7 | SI111 SUBSTRATE | 11 | 39% | 2% | 22 |
| 8 | LATERAL CONFINED EPITAXY | 10 | 73% | 1% | 8 |
| 9 | ALN BUFFER | 10 | 46% | 2% | 16 |
| 10 | ALGAN ALN INTERMEDIATE LAYER | 8 | 70% | 1% | 7 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| A review of GaN-based optoelectronic devices on silicon substrate | 2014 | 7 | 91 | 78% |
| Prospects of III-nitride optoelectronics grown on Si | 2013 | 27 | 145 | 49% |
| Substrates for epitaxy of gallium nitride: New materials and techniques | 2008 | 33 | 76 | 30% |
| Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films | 2014 | 1 | 65 | 45% |
| Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates | 2013 | 0 | 139 | 60% |
| Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review | 2014 | 0 | 36 | 44% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | FNW IEP AHE | 4 | 75% | 0.3% | 3 |
| 2 | ENGN LED SI SUBSTRATE | 3 | 100% | 0.3% | 3 |
| 3 | MALAYSIAN IND TECHNOL MITEC | 3 | 60% | 0.3% | 3 |
| 4 | RECH HETERO EXPITAXIE PLICAT | 2 | 67% | 0.2% | 2 |
| 5 | NANODEVICE SYST | 2 | 12% | 1.5% | 14 |
| 6 | SEKR PN 5 2 | 1 | 40% | 0.2% | 2 |
| 7 | THEORET ELEKTROTECH | 1 | 13% | 0.7% | 7 |
| 8 | PLICAT SOLAI | 1 | 20% | 0.4% | 4 |
| 9 | EDUC MINIST ENGN LUMINESCENCE MAT DEVIC | 1 | 33% | 0.2% | 2 |
| 10 | NOVEL SEMICOND MAT | 1 | 17% | 0.4% | 4 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000259288 | GAN//HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH |
| 2 | 0.0000156167 | LIGAO2//AMORPHOUS GAN//NON POLAR NITRIDES |
| 3 | 0.0000134732 | SEMICONDUCTING ALUMINUM COMPOUNDS//CERAM OPERAT//ALGAN |
| 4 | 0.0000111275 | GAN NANOWIRES//AMMONIATING//GAN NANORODS |
| 5 | 0.0000109796 | GAN SURFACES//INTERDISCIPLINARY MODELLING//INTERDISCIPLINARY MAT MODELLING |
| 6 | 0.0000105589 | CUBIC GAN//FB PHYS 6//HEXAGONAL GAN |
| 7 | 0.0000102528 | EPITAXIAL SEMICOND GRP//EXP SOLID STATE PHYS 3//RECIPROCAL SPACE ANALYSIS |
| 8 | 0.0000099550 | METAL SEMICONDUCTOR METAL MSM//ULTRAVIOLET UV DETECTOR//PHOTODETECTORS PDS |
| 9 | 0.0000095552 | A PLANE GAN//LED TECHNOL//NONPOLAR |
| 10 | 0.0000089974 | AL1 XINXN//ALINN//RESONANT CAVITY LIGHT EMITTING DIODE RCLED |