Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 11802 | 889 | 16.7 | 50% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 913 | 10550 | EL2//NONIONIZING ENERGY LOSS NIEL//DX CENTERS |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | FE DOPED INP | Author keyword | 6 | 80% | 0% | 4 |
| 2 | PHOSPHORUS VAPOR PRESSURE | Author keyword | 4 | 75% | 0% | 3 |
| 3 | WAFER ANNEALING | Author keyword | 3 | 57% | 0% | 4 |
| 4 | HEBEI SEMICOND | Address | 3 | 100% | 0% | 3 |
| 5 | MAT COMPONENTS S | Address | 3 | 100% | 0% | 3 |
| 6 | PHOSPHORUS ANTISITE | Author keyword | 3 | 100% | 0% | 3 |
| 7 | LT INP | Author keyword | 2 | 67% | 0% | 2 |
| 8 | ARTIFICIAL SEMICOND MAT | Address | 1 | 100% | 0% | 2 |
| 9 | INP FILMS | Author keyword | 1 | 100% | 0% | 2 |
| 10 | PHOSPHORUS RICH | Author keyword | 1 | 100% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | FE DOPED INP | 6 | 80% | 0% | 4 | Search FE+DOPED+INP | Search FE+DOPED+INP |
| 2 | PHOSPHORUS VAPOR PRESSURE | 4 | 75% | 0% | 3 | Search PHOSPHORUS+VAPOR+PRESSURE | Search PHOSPHORUS+VAPOR+PRESSURE |
| 3 | WAFER ANNEALING | 3 | 57% | 0% | 4 | Search WAFER+ANNEALING | Search WAFER+ANNEALING |
| 4 | PHOSPHORUS ANTISITE | 3 | 100% | 0% | 3 | Search PHOSPHORUS+ANTISITE | Search PHOSPHORUS+ANTISITE |
| 5 | LT INP | 2 | 67% | 0% | 2 | Search LT+INP | Search LT+INP |
| 6 | INP FILMS | 1 | 100% | 0% | 2 | Search INP+FILMS | Search INP+FILMS |
| 7 | PHOSPHORUS RICH | 1 | 100% | 0% | 2 | Search PHOSPHORUS+RICH | Search PHOSPHORUS+RICH |
| 8 | VINH4 | 1 | 100% | 0% | 2 | Search VINH4 | Search VINH4 |
| 9 | INGOT ANNEALING | 1 | 40% | 0% | 2 | Search INGOT+ANNEALING | Search INGOT+ANNEALING |
| 10 | SEMIINSULATING | 1 | 21% | 0% | 4 | Search SEMIINSULATING | Search SEMIINSULATING |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | UNDOPED SEMIINSULATING INP | 52 | 100% | 2% | 18 |
| 2 | UNDOPED INP | 15 | 77% | 1% | 10 |
| 3 | ENCAPSULATED CZOCHRALSKI INP | 13 | 80% | 1% | 8 |
| 4 | SEMIINSULATING INP | 13 | 39% | 3% | 26 |
| 5 | COMPENSATION DEFECTS | 9 | 83% | 1% | 5 |
| 6 | PIN ANTISITE | 9 | 83% | 1% | 5 |
| 7 | FE DOPED INP | 8 | 56% | 1% | 10 |
| 8 | DOPED INP | 6 | 33% | 2% | 16 |
| 9 | COMPENSATION MECHANISMS | 6 | 80% | 0% | 4 |
| 10 | INP SOLAR CELLS | 6 | 80% | 0% | 4 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| DEVELOPMENT OF HIGH-QUALITY INP SINGLE-CRYSTALS | 1987 | 10 | 5 | 60% |
| THE MICROSCOPY OF BULK-GROWN-III-V SEMICONDUCTOR-MATERIALS | 1987 | 5 | 51 | 43% |
| RECENT PROGRESS IN CHARACTERIZATION OF III-V COMPOUND SEMICONDUCTORS | 1985 | 1 | 5 | 60% |
| PROPERTIES, PREPARATION, AND DEVICE APPLICATIONS OF INDIUM-PHOSPHIDE | 1981 | 17 | 33 | 9% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | HEBEI SEMICOND | 3 | 100% | 0.3% | 3 |
| 2 | MAT COMPONENTS S | 3 | 100% | 0.3% | 3 |
| 3 | ARTIFICIAL SEMICOND MAT | 1 | 100% | 0.2% | 2 |
| 4 | PHOTOVOLTA BRANCH | 1 | 50% | 0.1% | 1 |
| 5 | PHOTOVOLTAICS NANOSTRUCT S | 1 | 50% | 0.1% | 1 |
| 6 | UNITA RIC BARI | 1 | 50% | 0.1% | 1 |
| 7 | ELET | 0 | 33% | 0.1% | 1 |
| 8 | EUITA FIS LICADA | 0 | 33% | 0.1% | 1 |
| 9 | FDN PESQUISA DESENVOLVIMENTO TELECOMUN | 0 | 33% | 0.1% | 1 |
| 10 | TELECOMMUN ADVANCEMENTS ORG | 0 | 33% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000205480 | LUMILEDS LIGHTING//ZINC DIFFUSION//ACCEPTOR DIFFUSION |
| 2 | 0.0000159713 | MAGNET SENSOR//GROUP III V EXCEPT NITRIDES//COPPER VACANCY COMPLEX |
| 3 | 0.0000125180 | EL2//CARBON ACCEPTOR//SEMI INSULATING GALLIUM ARSENIDE |
| 4 | 0.0000124684 | MEV ION IMPLANTATION//ACTIVATION EFFICIENCY//COLD IMPLANTS |
| 5 | 0.0000099697 | INFORMAT MAITRISE SCI PHYS//TECHNOL GUYANE//D5 IONS |
| 6 | 0.0000098855 | PHOTON RECYCLING//SEMICONDUCTOR SCINTILLATORS//FSF |
| 7 | 0.0000096321 | SEMICOND INTEGRATED CIRCUIT//SCI TECH FES SAIS//HIGFET |
| 8 | 0.0000094808 | NONIONIZING ENERGY LOSS NIEL//DISPLACEMENT DAMAGE DOSE//NONIONIZING ENERGY LOSS |
| 9 | 0.0000088471 | FARADAY COLLECTOR//MAGNETIC ANALYZER//IMAGE WIDTH |
| 10 | 0.0000080234 | SELECTIVE AREA GROWTH//TERTIARYBUTYLCHLORIDE//SELECTIVE EPITAXY |