Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 12963 | 805 | 17.6 | 38% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 3103 | 1831 | MICROSYST IMICRO//MULTIPHONON RECOMBINATION//INFORMAT OPT TECHNOL |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | A STATES | Author keyword | 3 | 60% | 0% | 3 |
| 2 | GRP PHOTOELECT THEOR | Address | 3 | 60% | 0% | 3 |
| 3 | COMPENSATED SEMICONDUCTORS | Author keyword | 2 | 67% | 0% | 2 |
| 4 | QUANTUM CORRECTIONS TO THE CONDUCTIVITY | Author keyword | 2 | 67% | 0% | 2 |
| 5 | HOT CARRIER INDUCED DEVICE DEGRADATION | Author keyword | 1 | 100% | 0% | 2 |
| 6 | IMPURITY AND DEFECT LEVELS IN ELEMENTAL SEMICONDUCTORS | Author keyword | 1 | 100% | 0% | 2 |
| 7 | PHOTO DEVICES | Address | 1 | 100% | 0% | 2 |
| 8 | PHOTO THERMAL IONIZATION SPECTROSCOPY | Author keyword | 1 | 100% | 0% | 2 |
| 9 | POST THERMAL ANNEALING | Author keyword | 1 | 27% | 0% | 4 |
| 10 | 7170EJ | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | DEFORMATION POTENTIAL CONSTANTS | 8 | 70% | 1% | 7 |
| 2 | GROUP V DONORS | 5 | 60% | 1% | 6 |
| 3 | PHOTOELECTRIC SPECTROSCOPY | 5 | 63% | 1% | 5 |
| 4 | ACCEPTOR STATES | 4 | 31% | 1% | 10 |
| 5 | SHALLOW ACCEPTORS | 4 | 21% | 2% | 16 |
| 6 | ATTRACTIVE CENTERS | 3 | 100% | 0% | 3 |
| 7 | PHOTOTHERMAL IONIZATION | 3 | 100% | 0% | 3 |
| 8 | SINGLY IONIZED ZINC | 3 | 100% | 0% | 3 |
| 9 | BISMUTH DONORS | 3 | 60% | 0% | 3 |
| 10 | SPHERICAL MODEL | 3 | 11% | 3% | 22 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| The physical principles of terahertz silicon lasers based on intracenter transitions | 2013 | 4 | 58 | 69% |
| Impurity resonance states in semiconductors | 2008 | 8 | 47 | 66% |
| PHOTOTHERMAL IONIZATION SPECTROSCOPY OF IMPURITIES IN SEMICONDUCTORS | 1993 | 4 | 52 | 50% |
| APPLICATIONS OF PHOTOELECTRIC SPECTROSCOPY IN QUALITY-CONTROL OF SEMICONDUCTOR-MATERIALS (REVIEW) | 1987 | 9 | 20 | 55% |
| PIEZOSPECTROSCOPY OF SEMICONDUCTORS | 1992 | 3 | 39 | 33% |
| SPECTROSCOPY OF THE SOLID-STATE ANALOGS OF THE HYDROGEN-ATOM - DONORS AND ACCEPTORS IN SEMICONDUCTORS | 1981 | 364 | 8 | 50% |
| Silicon-germanium nanostructures | 2005 | 1 | 19 | 16% |
| SOLUTION CHEMISTRY IN SILICON | 1988 | 0 | 60 | 23% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | GRP PHOTOELECT THEOR | 3 | 60% | 0.4% | 3 |
| 2 | PHOTO DEVICES | 1 | 100% | 0.2% | 2 |
| 3 | FAR INFRARED TECHNOL | 1 | 50% | 0.1% | 1 |
| 4 | PHOTOELECT DEVICES | 1 | 50% | 0.1% | 1 |
| 5 | PHYS MICROS UCT | 1 | 50% | 0.1% | 1 |
| 6 | PHYS MICROSTRUCTU | 0 | 33% | 0.1% | 1 |
| 7 | IMS CHIPS | 0 | 25% | 0.1% | 1 |
| 8 | WELTRAUMSENSORIK PLANETENERKUNDUNG | 0 | 25% | 0.1% | 1 |
| 9 | NIZHNI NOVGOROD PHYSICOTECH | 0 | 13% | 0.2% | 2 |
| 10 | HKU CAS | 0 | 20% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000186701 | ACCUMULATION AREA//PIEZOELECTRIC SCATTERING//STREAMING MOTION |
| 2 | 0.0000114652 | GERMANIUM DOPED WITH GALLIUM//ISO SPACECRAFT//EXTRINSIC SEMICONDUCTOR |
| 3 | 0.0000091766 | GAP N//PICOSECOND TIMING RESOLUTION//SI H BOND DISSOCIATION |
| 4 | 0.0000087627 | MICROSYST IMICRO//MULTIPHONON RECOMBINATION//EXP ANGEW PHYS |
| 5 | 0.0000086257 | INFORMAT OPT TECHNOL//HOLE SPIN//7170EJ |
| 6 | 0.0000082211 | CLUSTER OF DEFECTS//GROUP II ELEMENTS//SI CD |
| 7 | 0.0000072073 | ELECTRIC DIPOLE INDUCED SPIN RESONANCE//NERNST ETTINGSHAUSEN EFFECT//DIAMAGNETIC AND CYCLOTRON RESONANCES |
| 8 | 0.0000069607 | ELECT MAT DEVICES NANOSTRUCT//L DLTS//CNR IMM MATIS |
| 9 | 0.0000069414 | HYDROGENIC IMPURITY//QUANTUM WELL WIRE//DENSITY MATRIX APPROACH |
| 10 | 0.0000068636 | ODCR//OPTICALLY DETECTED CYCLOTRON RESONANCE ODCR//CNRS PHYS SOLIDES 154 |