Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 13672 | 757 | 19.0 | 53% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 3377 | 1199 | ELECT ENGN OPTOELECT TECHNOL//GAN PHOTOCATHODE//GAAS PHOTOCATHODE |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | ELECT ENGN OPTOELECT TECHNOL | Address | 82 | 51% | 15% | 114 |
| 2 | GAN PHOTOCATHODE | Author keyword | 29 | 88% | 2% | 14 |
| 3 | GAAS PHOTOCATHODE | Author keyword | 18 | 46% | 4% | 29 |
| 4 | LOW LIGHT LEVEL TECHNOL | Address | 11 | 78% | 1% | 7 |
| 5 | EXPONENTIAL DOPING | Author keyword | 8 | 62% | 1% | 8 |
| 6 | SPIN POLARIZED ELECTRON SOURCE | Author keyword | 6 | 80% | 1% | 4 |
| 7 | VARIED DOPING | Author keyword | 6 | 71% | 1% | 5 |
| 8 | POLARIZED ELECTRON SOURCE | Author keyword | 6 | 47% | 1% | 9 |
| 9 | CS O ACTIVATION | Author keyword | 6 | 100% | 1% | 4 |
| 10 | ELECT ENGN OPTO ELECT TECHNOL | Address | 6 | 100% | 1% | 4 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | GAN PHOTOCATHODE | 29 | 88% | 2% | 14 | Search GAN+PHOTOCATHODE | Search GAN+PHOTOCATHODE |
| 2 | GAAS PHOTOCATHODE | 18 | 46% | 4% | 29 | Search GAAS+PHOTOCATHODE | Search GAAS+PHOTOCATHODE |
| 3 | EXPONENTIAL DOPING | 8 | 62% | 1% | 8 | Search EXPONENTIAL+DOPING | Search EXPONENTIAL+DOPING |
| 4 | SPIN POLARIZED ELECTRON SOURCE | 6 | 80% | 1% | 4 | Search SPIN+POLARIZED+ELECTRON+SOURCE | Search SPIN+POLARIZED+ELECTRON+SOURCE |
| 5 | VARIED DOPING | 6 | 71% | 1% | 5 | Search VARIED+DOPING | Search VARIED+DOPING |
| 6 | POLARIZED ELECTRON SOURCE | 6 | 47% | 1% | 9 | Search POLARIZED+ELECTRON+SOURCE | Search POLARIZED+ELECTRON+SOURCE |
| 7 | CS O ACTIVATION | 6 | 100% | 1% | 4 | Search CS+O+ACTIVATION | Search CS+O+ACTIVATION |
| 8 | SURFACE ESCAPE PROBABILITY | 4 | 67% | 1% | 4 | Search SURFACE+ESCAPE+PROBABILITY | Search SURFACE+ESCAPE+PROBABILITY |
| 9 | PHOTOCATHODE | 4 | 12% | 5% | 35 | Search PHOTOCATHODE | Search PHOTOCATHODE |
| 10 | EXTENDED BLUE | 4 | 75% | 0% | 3 | Search EXTENDED+BLUE | Search EXTENDED+BLUE |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | GAAS PHOTOCATHODES | 52 | 76% | 5% | 37 |
| 2 | CHARGE LIMIT | 15 | 73% | 1% | 11 |
| 3 | LARGE ENHANCEMENT | 12 | 45% | 3% | 20 |
| 4 | PHOTOCATHODES | 12 | 19% | 8% | 57 |
| 5 | ACTIVATED GALLIUM ARSENIDE | 12 | 59% | 2% | 13 |
| 6 | POLARIZED ELECTRON SOURCE | 11 | 54% | 2% | 14 |
| 7 | GAAS CS | 9 | 83% | 1% | 5 |
| 8 | NEGATIVE ELECTRON AFFINITY | 8 | 20% | 5% | 37 |
| 9 | GAAS PHOTOCATHODE | 6 | 80% | 1% | 4 |
| 10 | ELECTRON AFFINITY PHOTOCATHODES | 5 | 60% | 1% | 6 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| THE STANFORD LINEAR-ACCELERATOR POLARIZED ELECTRON SOURCE | 1995 | 84 | 34 | 65% |
| Numerical analysis of temporal response of a large exponential-doping transmission-mode GaAs photocathode | 2013 | 2 | 16 | 81% |
| Polarized beams for electron accelerators | 2011 | 1 | 34 | 53% |
| ADVANCES IN POLARIZED ELECTRON SOURCES | 1995 | 9 | 39 | 51% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | ELECT ENGN OPTOELECT TECHNOL | 82 | 51% | 15% | 114 |
| 2 | LOW LIGHT LEVEL TECHNOL | 11 | 78% | 0.9% | 7 |
| 3 | ELECT ENGN OPTO ELECT TECHNOL | 6 | 100% | 0.5% | 4 |
| 4 | ENGN NUCL TECHNOL PLICAT | 5 | 42% | 1.3% | 10 |
| 5 | ELE ON ELECT | 3 | 100% | 0.4% | 3 |
| 6 | AICHI SYNCHROTRON RADIAT | 3 | 60% | 0.4% | 3 |
| 7 | ELECT ENGN OPT TECHNOL | 1 | 50% | 0.3% | 2 |
| 8 | OPTOELECT DEVICE DEV GRP | 1 | 50% | 0.3% | 2 |
| 9 | ELECT ENGN OPTOELECT | 1 | 27% | 0.4% | 3 |
| 10 | DRECAM ETUD SACLAY | 1 | 50% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000219782 | NANOMAT CHARACTERIZAT SCI PROC TECHNOL//AG CUINSE2//C T NANOMAT CHARACTERIZAT SCI PROC TECHNO |
| 2 | 0.0000163160 | SPIN SEM//SP SEM//SPIN POLARIZED HE 4 IONS |
| 3 | 0.0000121066 | CEA SERV RECH SUR ES IRRADIAT MAT//CHIM ORGAN THEORIQUE//DISPLAY DEVICE CO |
| 4 | 0.0000117311 | RF GUN//PHOTO INJECTOR//PHOTOINJECTOR |
| 5 | 0.0000090356 | GAN SURFACES//INTERDISCIPLINARY MODELLING//INTERDISCIPLINARY MAT MODELLING |
| 6 | 0.0000074363 | STRANGE FORM FACTORS//AND OTHER DISCRETE SYMMETRIES//QUASI ELASTIC REGION |
| 7 | 0.0000073124 | ATOMIC HYDROGEN CLEANING//ECR HYDROGEN PLASMA//IN SITU VACUUM PROCESS |
| 8 | 0.0000058851 | WEBSTER//ADIABATIC BOND CHARGE MODEL//INAS110 |
| 9 | 0.0000046048 | ELECTRON COUNTING MODEL//SUR E STUDY//GA ADATOM |
| 10 | 0.0000042816 | SCATTERING CORRECTIONS//FED SCI PROD//SPECTRAL MATCHING FACTOR |