Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 20926 | 379 | 19.1 | 34% |
Classes in level above (level 2) |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | ING ELECT SEES | Address | 1 | 100% | 1% | 2 |
| 2 | SECC PUEBLA | Address | 1 | 100% | 1% | 2 |
| 3 | ALLOY SOURCE | Author keyword | 1 | 50% | 0% | 1 |
| 4 | DANGLING BOND DB | Author keyword | 1 | 50% | 0% | 1 |
| 5 | CL REMOVAL | Author keyword | 0 | 33% | 0% | 1 |
| 6 | DIPARTIMENTO CHIMCNR | Address | 0 | 33% | 0% | 1 |
| 7 | HYDRIDE VPE | Author keyword | 0 | 33% | 0% | 1 |
| 8 | METALORGANIC VPE | Author keyword | 0 | 33% | 0% | 1 |
| 9 | ABINITIO MOLECULAR ORBITAL METHOD | Author keyword | 0 | 25% | 0% | 1 |
| 10 | HALOGEN TRANSPORT | Author keyword | 0 | 25% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | ALLOY SOURCE | 1 | 50% | 0% | 1 | Search ALLOY+SOURCE | Search ALLOY+SOURCE |
| 2 | DANGLING BOND DB | 1 | 50% | 0% | 1 | Search DANGLING+BOND+DB | Search DANGLING+BOND+DB |
| 3 | CL REMOVAL | 0 | 33% | 0% | 1 | Search CL+REMOVAL | Search CL+REMOVAL |
| 4 | HYDRIDE VPE | 0 | 33% | 0% | 1 | Search HYDRIDE+VPE | Search HYDRIDE+VPE |
| 5 | METALORGANIC VPE | 0 | 33% | 0% | 1 | Search METALORGANIC+VPE | Search METALORGANIC+VPE |
| 6 | ABINITIO MOLECULAR ORBITAL METHOD | 0 | 25% | 0% | 1 | Search ABINITIO+MOLECULAR+ORBITAL+METHOD | Search ABINITIO+MOLECULAR+ORBITAL+METHOD |
| 7 | HALOGEN TRANSPORT | 0 | 25% | 0% | 1 | Search HALOGEN+TRANSPORT | Search HALOGEN+TRANSPORT |
| 8 | CLOSE SPACED VAPOR TRANSPORT | 0 | 20% | 0% | 1 | Search CLOSE+SPACED+VAPOR+TRANSPORT | Search CLOSE+SPACED+VAPOR+TRANSPORT |
| 9 | GALLIUM HYDRIDE | 0 | 20% | 0% | 1 | Search GALLIUM+HYDRIDE | Search GALLIUM+HYDRIDE |
| 10 | 4H POLYTYPE | 0 | 17% | 0% | 1 | Search 4H+POLYTYPE | Search 4H+POLYTYPE |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | CSVT | 2 | 67% | 1% | 2 |
| 2 | HYDRIDE VPE | 2 | 50% | 1% | 3 |
| 3 | VPE | 2 | 19% | 2% | 8 |
| 4 | VPE GROWTH | 2 | 43% | 1% | 3 |
| 5 | SPACE VAPOR TRANSPORT | 1 | 100% | 1% | 2 |
| 6 | SPACED VAPOR TRANSPORT | 1 | 23% | 1% | 3 |
| 7 | GAXIN1 XAS INP | 1 | 50% | 0% | 1 |
| 8 | VPE GAAS | 1 | 50% | 0% | 1 |
| 9 | ASCL3 | 0 | 33% | 0% | 1 |
| 10 | DOPED N TYPE | 0 | 17% | 0% | 1 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| GROWTH OF SEMICONDUCTORS BY THE CLOSE-SPACED VAPOR TRANSPORT TECHNIQUE - A REVIEW | 1988 | 14 | 17 | 41% |
| PREPARATION OF SEMICONDUCTING MATERIALS OF THE AIIIBV TYPE BY THE CVD METHOD FROM HYDRIDE AND CHLORIDE CHEMICAL-SYSTEMS | 1986 | 1 | 27 | 70% |
| KINETIC-ANALYSIS OF EPITAXIAL-GROWTH OF CRYSTALS FROM GAS-PHASE | 1984 | 1 | 1 | 100% |
| EPITAXIAL-GROWTH OF GAAS IN CHLORIDE TRANSPORT-SYSTEMS | 1983 | 8 | 10 | 70% |
| VAPOR-PHASE EPITAXY OF GROUP-III-V COMPOUND OPTOELECTRONIC DEVICES | 1985 | 2 | 9 | 56% |
| PHYSICS AND TECHNOLOGY OF VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS - A REVIEW | 1984 | 1 | 5 | 40% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | ING ELECT SEES | 1 | 100% | 0.5% | 2 |
| 2 | SECC PUEBLA | 1 | 100% | 0.5% | 2 |
| 3 | DIPARTIMENTO CHIMCNR | 0 | 33% | 0.3% | 1 |
| 4 | ELECT MAT TECHNOL | 0 | 13% | 0.5% | 2 |
| 5 | CIDS IC | 0 | 17% | 0.3% | 1 |
| 6 | MAT SCI SEMICOND | 0 | 17% | 0.3% | 1 |
| 7 | DPTO ING ELECT | 0 | 11% | 0.3% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000263111 | INDIUM PHOSPHIDE100//INTERACTION IONS MATTER//SIMULATION METHOD TRIM |
| 2 | 0.0000193059 | TRIMETHYLINDIUM//CHEMICAL BEAM EPITAXY CBE//MOLECULAR LAYER EPITAXY |
| 3 | 0.0000169294 | SELECTIVE AREA GROWTH//TERTIARYBUTYLCHLORIDE//SELECTIVE EPITAXY |
| 4 | 0.0000143206 | INDIUM MONOCHLORIDE//MOLECULAR SPECTROSCOPIC CONSTANTS//OPTO ELECT INFORMAT SCI TECHNOL |
| 5 | 0.0000109100 | OVAL DEFECTS//SEEIE//GA AS BI SOLUTION |
| 6 | 0.0000092751 | INALAS INP//INALAS ALLOYS//INALAS ALASSB |
| 7 | 0.0000080364 | SURFACE AND INTERFACE PHENOMENA//TELECOMMUN ADVANCEMENTS ORG//SENDAI |
| 8 | 0.0000079483 | ELECTROEPITAXY//MICROCHANNEL EPITAXY//LIQUID PHASE ELECTROEPITAXY |
| 9 | 0.0000077543 | REMOTE SENSING AND ELECTROMAGNETIC PROCESSES//CALCIUM AND MEMBRANE BINDING PROTEINS//CDDM NOISE |
| 10 | 0.0000076838 | PARASITIC REACTION//CVD REACTOR//MOCVD REACTOR |