Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 21484 | 359 | 15.6 | 35% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 138 | 22619 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | NONQUASI STATIC NQS EFFECT | Author keyword | 5 | 63% | 1% | 5 |
| 2 | QUCS | Author keyword | 4 | 67% | 1% | 4 |
| 3 | RSCE | Author keyword | 4 | 56% | 1% | 5 |
| 4 | DOPANT PILE UP | Author keyword | 3 | 100% | 1% | 3 |
| 5 | MOSFET COMPACT MODEL | Author keyword | 3 | 100% | 1% | 3 |
| 6 | NONQUASI STATIC NQS | Author keyword | 3 | 50% | 1% | 4 |
| 7 | COMPACT MOSFET MODEL | Author keyword | 3 | 60% | 1% | 3 |
| 8 | CHANNEL VOLTAGE | Author keyword | 2 | 67% | 1% | 2 |
| 9 | METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR MOSFET MODEL | Author keyword | 2 | 67% | 1% | 2 |
| 10 | REVERSE SHORT CHANNEL EFFECT | Author keyword | 2 | 29% | 1% | 5 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | 4 TERMINAL MOSFET | 4 | 47% | 2% | 7 |
| 2 | MOS VLSI CIRCUITS | 2 | 67% | 1% | 2 |
| 3 | LONG CHANNEL | 2 | 30% | 2% | 6 |
| 4 | BSIM | 1 | 100% | 1% | 2 |
| 5 | IMPURITY PROFILE | 1 | 50% | 1% | 2 |
| 6 | OBTAIN EXTENDED ACCURACY | 1 | 100% | 1% | 2 |
| 7 | MOSFET INVERSION LAYER | 1 | 50% | 0% | 1 |
| 8 | PARAMETER EXTRACTION PROGRAM | 1 | 50% | 0% | 1 |
| 9 | SUBTHRESHOLD ANALOG RF PERFORMANCE | 0 | 33% | 0% | 1 |
| 10 | TRANSISTOR CAPACITANCES | 0 | 33% | 0% | 1 |
Journals |
Reviews |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | ELECT ELECT INFORMAT TELECOMMUN ENGN | 1 | 100% | 0.6% | 2 |
| 2 | HGEBIET MIKROWELLENTECH | 1 | 30% | 0.8% | 3 |
| 3 | CIVIL ARCHITECTURAL TECHNOL | 1 | 50% | 0.3% | 1 |
| 4 | COMP COMMUN TECHNOL MATH SCI | 1 | 50% | 0.3% | 1 |
| 5 | FAK IV ELEKTROTECHNIK INFORMATIK | 1 | 50% | 0.3% | 1 |
| 6 | FAK ELEKTROTECH INFORMAT 4 | 1 | 20% | 0.8% | 3 |
| 7 | ELB ECUBLENS | 0 | 20% | 0.6% | 2 |
| 8 | MYO ELECT PROG | 0 | 25% | 0.3% | 1 |
| 9 | NANODEV SYST | 0 | 20% | 0.3% | 1 |
| 10 | MOSIS SERV | 0 | 17% | 0.3% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000258085 | ELLIPSOIDAL TECHNIQUE//DESIGN CENTERING//PARAMETRIC YIELD |
| 2 | 0.0000222938 | CRYOGENIC CMOS//LOW TEMPERATURE ELECTRONICS//LOW TEMPERATURE CIRCUIT |
| 3 | 0.0000172189 | NOISE PARAMETERS//HIGH FREQUENCY HF NOISE//KINK PHENOMENON |
| 4 | 0.0000171646 | DOUBLE GATE MOSFET//FINFET//SHORT CHANNEL EFFECTS |
| 5 | 0.0000167480 | HOT CARRIER//CHANNEL INITIATED SECONDARY ELECTRON CHISEL//HOT CARRIER DEGRADATION |
| 6 | 0.0000108054 | SIDEWALL OXIDATION//COMPUTAT ELECT//MEMORY DEVICE BUSINESS |
| 7 | 0.0000102803 | SHORT CIRCUIT POWER DISSIPATION//TRANSISTOR SIZING//GATE SIZING |
| 8 | 0.0000091286 | BCDMOS//HIGH SIDE//MULTIPLE CHANNEL FET |
| 9 | 0.0000090777 | LARGE SIGNAL MODEL//NONLINEAR MEASUREMENTS//MESFETS |
| 10 | 0.0000086921 | DIRECT TUNNELING//QUANTUM MECHANICAL EFFECTS QMES//WAVE FUNCTION PENETRATION |