Class information for:
Level 1: CAPACITORLESS DRAM//1T DRAM//CAPACITORLESS 1T DRAM

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
23498 289 14.9 51%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
138 22619 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 CAPACITORLESS DRAM Author keyword 45 90% 7% 19
2 1T DRAM Author keyword 37 73% 10% 29
3 CAPACITORLESS 1T DRAM Author keyword 13 71% 3% 10
4 FLOATING BODY DRAM Author keyword 12 86% 2% 6
5 FLOATING BODY CELL FBC Author keyword 11 100% 2% 6
6 CAPACITORLESS Author keyword 10 61% 4% 11
7 PSEUDO MOSFET PSI MOSFET Author keyword 9 83% 2% 5
8 FLOATING BODY CELL Author keyword 8 70% 2% 7
9 BISTABLE RESISTOR Author keyword 8 100% 2% 5
10 UNIFIED RAM URAM Author keyword 7 67% 2% 6

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 CAPACITORLESS DRAM 45 90% 7% 19 Search CAPACITORLESS+DRAM Search CAPACITORLESS+DRAM
2 1T DRAM 37 73% 10% 29 Search 1T+DRAM Search 1T+DRAM
3 CAPACITORLESS 1T DRAM 13 71% 3% 10 Search CAPACITORLESS+1T+DRAM Search CAPACITORLESS+1T+DRAM
4 FLOATING BODY DRAM 12 86% 2% 6 Search FLOATING+BODY+DRAM Search FLOATING+BODY+DRAM
5 FLOATING BODY CELL FBC 11 100% 2% 6 Search FLOATING+BODY+CELL+FBC Search FLOATING+BODY+CELL+FBC
6 CAPACITORLESS 10 61% 4% 11 Search CAPACITORLESS Search CAPACITORLESS
7 PSEUDO MOSFET PSI MOSFET 9 83% 2% 5 Search PSEUDO+MOSFET+PSI+MOSFET Search PSEUDO+MOSFET+PSI+MOSFET
8 FLOATING BODY CELL 8 70% 2% 7 Search FLOATING+BODY+CELL Search FLOATING+BODY+CELL
9 BISTABLE RESISTOR 8 100% 2% 5 Search BISTABLE+RESISTOR Search BISTABLE+RESISTOR
10 UNIFIED RAM URAM 7 67% 2% 6 Search UNIFIED+RAM+URAM Search UNIFIED+RAM+URAM

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 CAPACITORLESS 1T DRAM 23 100% 3% 10
2 1T DRAM 10 73% 3% 8
3 PSEUDO MOSFET 6 100% 1% 4
4 UNIFIED RAM URAM 3 57% 1% 4
5 THIN SOI FILMS 3 100% 1% 3
6 GENERATION LIFETIME 3 37% 2% 7
7 DRAM CELL 3 60% 1% 3
8 MSD 3 60% 1% 3
9 Z RAM 3 60% 1% 3
10 DRAM TECHNOLOGY 2 67% 1% 2

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
A review of the pseudo-MOS transistor in SOI wafers: Operation, parameter extraction, and applications 2000 99 13 54%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 BIONEC GRP 2 67% 0.7% 2
2 DESIGN SOLUT 2 50% 1.0% 3
3 LEGELB ECUBLENS 1 100% 0.7% 2
4 MEMORY DESIGN ENGN 1 100% 0.7% 2
5 ADV CUSTOM TECHNOL 1 40% 0.7% 2
6 ADV MEMORY DEVICE TECHNOL 1 50% 0.3% 1
7 ADV TECHNOL GRP 8 1 50% 0.3% 1
8 DCAE 1 50% 0.3% 1
9 MEM DEVICE BUSINESS 1 50% 0.3% 1
10 MOS DEVICE 1 50% 0.3% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000198875 DOUBLE GATE MOSFET//FINFET//SHORT CHANNEL EFFECTS
2 0.0000197554 BACK BIAS EFFECT//VERTICAL MOSFET//SURROUNDING GATE TRANSISTOR
3 0.0000154722 TUNNELING FIELD EFFECT TRANSISTOR TFET//TUNNEL FIELD EFFECT TRANSISTOR TFET//TUNNEL FET TFET
4 0.0000149697 SIDEWALL OXIDATION//COMPUTAT ELECT//MEMORY DEVICE BUSINESS
5 0.0000122546 DATA RETENTION TIME//VOLTAGE DOWN CONVERTER//FERROELECTRIC MEMORY
6 0.0000077255 NETWORK COMPUTAT NANOTECHNOL//QUASI BALLISTIC TRANSPORT//JOURNAL OF COMPUTATIONAL ELECTRONICS
7 0.0000073600 HOT CARRIER//CHANNEL INITIATED SECONDARY ELECTRON CHISEL//HOT CARRIER DEGRADATION
8 0.0000070931 IRRADIATED P N JUNCTION LEAKAGE//JUNCTION SHAPE//P N JUNCTION LEAKAGE
9 0.0000067149 SIMOX//BURIED OXIDE LAYER//CONTACTLESS I V METHOD
10 0.0000062527 STRAINED SI//SIGE//STRAINED SILICON