Class information for:
Level 1: GAAS ON SI//GAAS SI//GAP ON SI

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
3078 1990 17.2 70%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
260 18934 GAAS ON SI//GAAS SI//GAINP

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 GAAS ON SI Author keyword 89 75% 3% 65
2 GAAS SI Author keyword 54 76% 2% 38
3 GAP ON SI Author keyword 11 78% 0% 7
4 GAAS GE Author keyword 9 67% 0% 8
5 ALGAAS ON SI Author keyword 6 100% 0% 4
6 GAAS ON GE Author keyword 6 100% 0% 4
7 INP ON SI Author keyword 5 60% 0% 6
8 CONFORMAL GROWTH Author keyword 4 75% 0% 3
9 INP SI Author keyword 4 75% 0% 3
10 MICROSTRUCT DEVICES SHOWA KU Address 4 75% 0% 3

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 GAAS ON SI 89 75% 3% 65 Search GAAS+ON+SI Search GAAS+ON+SI
2 GAAS SI 54 76% 2% 38 Search GAAS+SI Search GAAS+SI
3 GAP ON SI 11 78% 0% 7 Search GAP+ON+SI Search GAP+ON+SI
4 GAAS GE 9 67% 0% 8 Search GAAS+GE Search GAAS+GE
5 ALGAAS ON SI 6 100% 0% 4 Search ALGAAS+ON+SI Search ALGAAS+ON+SI
6 GAAS ON GE 6 100% 0% 4 Search GAAS+ON+GE Search GAAS+ON+GE
7 INP ON SI 5 60% 0% 6 Search INP+ON+SI Search INP+ON+SI
8 CONFORMAL GROWTH 4 75% 0% 3 Search CONFORMAL+GROWTH Search CONFORMAL+GROWTH
9 INP SI 4 75% 0% 3 Search INP+SI Search INP+SI
10 THERMAL CYCLE ANNEALING 4 44% 0% 7 Search THERMAL+CYCLE+ANNEALING Search THERMAL+CYCLE+ANNEALING

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SINGLE DOMAIN GAAS 42 94% 1% 15
2 HIGH QUALITY GAAS 29 88% 1% 14
3 ON SI 20 62% 1% 21
4 ANTIPHASE DOMAINS 17 68% 1% 15
5 SELF ANNIHILATION 17 70% 1% 14
6 DEFECT REDUCTION 15 45% 1% 25
7 SI 100 11 52% 1% 15
8 GAAS GE GAAS HETEROSTRUCTURES 11 100% 0% 6
9 GAAS ON SI 11 69% 0% 9
10 STRESS VARIATIONS 11 78% 0% 7

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
GALLIUM-ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS ON SILICON 1990 378 122 78%
Stresses and strains in epilayers, stripes and quantum structures of III-V compound semiconductors 1996 113 111 26%
Heteroepitaxy and selective area heteroepitaxy for silicon photonics 2012 22 57 32%
GaAs epitaxy on Si substrates: modern status of research and engineering 2008 49 207 42%
RELAXED LATTICE-MISMATCHED GROWTH OF III-V SEMICONDUCTORS 1991 27 161 78%
Germanium: Epitaxy and its applications 2010 20 95 13%
GALLIUM-ARSENIDE ON SILICON - A REVIEW 1988 10 22 95%
MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS AND OTHER COMPOUND SEMICONDUCTORS 1991 10 136 32%
STRUCTURAL DEFECTS IN EPITAXIAL III/V LAYERS 1993 4 87 30%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 MICROSTRUCT DEVICES SHOWA KU 4 75% 0.2% 3
2 MICROSTRUCT DEVICES 4 19% 0.9% 18
3 CRG D2AM 2 67% 0.1% 2
4 FOTON OHM 2 50% 0.2% 3
5 ELECT ENGN WESTERN NANOELECT 1 100% 0.1% 2
6 INTER MEASUREMENT 1 100% 0.1% 2
7 MICRO STRUCT DEVICES 1 18% 0.3% 6
8 PHYS EP 3 1 30% 0.2% 3
9 TERAHERTZ TERASCALE ELECT 1 40% 0.1% 2
10 CNRSCEAUJF 1 50% 0.1% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000149296 MISFIT DISLOCATIONS//GRADED BUFFER LAYER//DISLOCATION COMPENSATION
2 0.0000121041 EPITAXIAL LIFT OFF//EPITAXIAL LIFT OFF ELO//PHOTONIC DOT
3 0.0000073407 AVERAGE BOND ENERGY THEORY//PHYS IND PHYS//PH ECUBLENS PHYS PL
4 0.0000073224 GESN//L NESS//GERMANIUM TIN
5 0.0000067450 SURFACTANT MEDIATED EPITAXY//BI NANOLINES//SI100 2X1 SB
6 0.0000057009 LUMINESCENT COUPLING//ENERGIA SOLAR//LUMINESCENCE COUPLING
7 0.0000053799 SELECTIVE AREA GROWTH//TERTIARYBUTYLCHLORIDE//SELECTIVE EPITAXY
8 0.0000051981 NOVOSHAKHTINSK BRANCH//ELE OCHEM HYDROGEN ENERGY//IRON STEEL IND
9 0.0000050624 OVAL DEFECTS//SEEIE//GA AS BI SOLUTION
10 0.0000050173 ATOMIC HYDROGEN CLEANING//ECR HYDROGEN PLASMA//IN SITU VACUUM PROCESS