Class information for:
Level 1: IN FRANTZEVICH PROBLEMS MAT SCI//GROWTH TECHNIQUES//SEMICOND HETEROSTRUCT

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
32944 100 11.3 26%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
1001 9900 SILICON CARBIDE//4H SIC//SIC

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 IN FRANTZEVICH PROBLEMS MAT SCI Address 1 100% 2% 2
2 GROWTH TECHNIQUES Author keyword 0 20% 1% 1
3 SEMICOND HETEROSTRUCT Address 0 20% 1% 1
4 LIQUID PHASE GROWTH Author keyword 0 11% 1% 1
5 PHASE BOUNDARY REGION Author keyword 0 100% 1% 1

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class		 LCSH search Wikipedia search
1 GROWTH TECHNIQUES 0 20% 1% 1 Search GROWTH+TECHNIQUES Search GROWTH+TECHNIQUES
2 LIQUID PHASE GROWTH 0 11% 1% 1 Search LIQUID+PHASE+GROWTH Search LIQUID+PHASE+GROWTH
3 PHASE BOUNDARY REGION 0 100% 1% 1 Search PHASE+BOUNDARY+REGION Search PHASE+BOUNDARY+REGION

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 INSULATING GALLIUM ARSENIDE 0 25% 1% 1
2 BREAKDOWN ELECTROLUMINESCENCE 0 100% 1% 1

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
NEW PERSPECTIVES OF SILICON-CARBIDE - AN OVERVIEW, WITH SPECIAL EMPHASIS ON NOISE AND SPACE-CHARGE-LIMITED FLOW 1988 4 11 55%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 IN FRANTZEVICH PROBLEMS MAT SCI 1 100% 2.0% 2
2 SEMICOND HETEROSTRUCT 0 20% 1.0% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000174731 ALGAAS HETEROSTRUCTURES//EPITAXY ETCHING//QUANTUM WELL LASER STRUCTURES
2 0.0000146351 LEHRSTUHL THEOR FESTKORPERPHYS//SEMI INSULATING SIC//TEMPERATURE DEPENDENCE OF MAJORITY CARRIER CONCENTRATION
3 0.0000093244 3C SIC//FG NANOTECHNOL//HOLLOW VOID
4 0.0000092682 HITACHI ADM//SOLAR CELL METALLIZATION//
5 0.0000092338 OHMIC CONTACT//OHMIC CONTACTS//P TYPE SIC
6 0.0000077208 PULLING METHOD//TRI PHASE EPITAXY//MEANDER SHAPE
7 0.0000074303 CORRELATION SPHERE//ULTRASONIC VELOCITY AND ABSORPTION//ULTRASONIC ABSORPTION
8 0.0000069404 4H SIC//SILICON CARBIDE SIC//BIPOLAR JUNCTION TRANSISTORS BJTS
9 0.0000060357 WANNIER STARK LADDER//BLOCH OSCILLATIONS//ELECTRIC FIELD DOMAINS
10 0.0000057992 MICROPIPE//SUBLIMATION GROWTH//MICROPIPES