Class information for:
Level 1: CHEMICAL DRY ETCHING//PLASMA NANOTECHNOL PLANT//AFTER CORROSION

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
4273 1740 20.7 49%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
1317 8022 ELECT DEVICES MAT TECHNOL//PLASMA ETCHING//SIO2 ETCHING

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 CHEMICAL DRY ETCHING Author keyword 9 64% 1% 9
2 PLASMA NANOTECHNOL PLANT Address 4 75% 0% 3
3 AFTER CORROSION Author keyword 3 100% 0% 3
4 ATTO Address 3 100% 0% 3
5 DRES Author keyword 3 100% 0% 3
6 MMTCE Author keyword 3 100% 0% 3
7 GLOBAL WARMING EFFECT Author keyword 2 67% 0% 2
8 N 2 ADDITION Author keyword 2 67% 0% 2
9 POST COURSES FUNCT CONTROL SYST Address 2 43% 0% 3
10 CHLORINE TRIFLUORIDE Author keyword 2 26% 0% 5

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class		 LCSH search Wikipedia search
1 CHEMICAL DRY ETCHING 9 64% 1% 9 Search CHEMICAL+DRY+ETCHING Search CHEMICAL+DRY+ETCHING
2 AFTER CORROSION 3 100% 0% 3 Search AFTER+CORROSION Search AFTER+CORROSION
3 DRES 3 100% 0% 3 Search DRES Search DRES
4 MMTCE 3 100% 0% 3 Search MMTCE Search MMTCE
5 GLOBAL WARMING EFFECT 2 67% 0% 2 Search GLOBAL+WARMING+EFFECT Search GLOBAL+WARMING+EFFECT
6 N 2 ADDITION 2 67% 0% 2 Search N+2+ADDITION Search N+2+ADDITION
7 CHLORINE TRIFLUORIDE 2 26% 0% 5 Search CHLORINE+TRIFLUORIDE Search CHLORINE+TRIFLUORIDE
8 AL SI CU ETCHING 1 100% 0% 2 Search AL+SI+CU+ETCHING Search AL+SI+CU+ETCHING
9 DOWNFLOW PLASMA 1 100% 0% 2 Search DOWNFLOW+PLASMA Search DOWNFLOW+PLASMA
10 PECVD CHAMBER CLEANING 1 100% 0% 2 Search PECVD+CHAMBER+CLEANING Search PECVD+CHAMBER+CLEANING

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 CF4 O 2 N 2 33 100% 1% 13
2 ADDITIVE GASES 17 100% 0% 8
3 N 2 ADDITION 14 100% 0% 7
4 REMOTE PLASMAS 13 80% 0% 8
5 XEF2 12 28% 2% 35
6 WARMING GAS EMISSION 11 100% 0% 6
7 ETCHING REACTIONS 8 70% 0% 7
8 FLUORINE PASSIVATION 6 53% 0% 8
9 F 2 REMOTE PLASMAS 6 100% 0% 4
10 NF3 PLASMA 4 75% 0% 3

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
SURFACE SCIENCE ASPECTS OF ETCHING REACTIONS 1992 324 164 68%
THE ADSORPTION AND REACTION OF FLUORINE ON THE SI(100) SURFACE 1989 76 46 54%
Photomask plasma etching: A review 2006 19 28 32%
Dry etching of electronic oxides, polymers, and semiconductors 2005 48 100 25%
PLASMA-ETCHING OF ALUMINUM METALLIZATIONS FOR ULTRALARGE SCALE INTEGRATED-CIRCUITS 1993 14 20 60%
PLASMA-ETCHING USING NF3 - A REVIEW 1989 17 17 76%
Plasma-based processes and thin film equipment for nano-scale device fabrication 2011 4 39 15%
ADVANCES IN DRY ETCHING PROCESSES - A REVIEW 1985 48 20 90%
SURFACE PROCESSES IN PLASMA-ASSISTED ETCHING ENVIRONMENTS 1983 207 37 54%
REACTIONS OF PHOTOGENERATED FREE-RADICALS AT SURFACES OF ELECTRONIC MATERIALS 1989 28 104 27%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 PLASMA NANOTECHNOL PLANT 4 75% 0.2% 3
2 ATTO 3 100% 0.2% 3
3 POST COURSES FUNCT CONTROL SYST 2 43% 0.2% 3
4 SHIBUKAWA 1 38% 0.2% 3
5 ELE ON DEVICES CO 1 50% 0.1% 1
6 EUV MASK BLANK DEFECT REDUCT PROGRAM 1 50% 0.1% 1
7 FOR UNGSZENTRUM MIKROSTRUKT TECH 1 50% 0.1% 1
8 KASADO DESIGN PROD 1 50% 0.1% 1
9 PL SEMICOND DEVICES 1 50% 0.1% 1
10 SEMICONDUCTOR BUSINESS UNIT 1 50% 0.1% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000261428 ELECT DEVICES MAT TECHNOL//SIO2 ETCHING//PLASMA ETCHING
2 0.0000226953 PHYSICOCHIM MOLEC ORSAY//SURFACE STRUCTURE AND ROUGHNESS//DESORPTION INDUCED BY ELECTRON STIMULATION
3 0.0000116100 INFLUENCE REGULARITY//SF6 DECOMPOSITION PRODUCTS//BY PRODUCT MONITORING
4 0.0000115847 INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING//TI HARD MASK//CL 2 BASED PLASMA
5 0.0000112027 FUJIMI KU//GAAS OXIDE//REACTIVE ION BEAM ETCHING
6 0.0000108300 ATOMIC LAYER ETCHING//GATE CHARGING//NEUTRAL BEAM ETCHING
7 0.0000107966 SYNCHROTRON RADIATION STIMULATED ETCHING//SYNCHROTRON RADIATION EXCITED GROWTH//VACUUM UV PHOTOSCI
8 0.0000083193 ECR PLASMA//UNIFORM PLASMA//MAGNETIC MULTIPOLE FIELD
9 0.0000077154 WET OZONE//PHOTORESIST REMOVAL//RESIST REMOVAL
10 0.0000072661 LADDER SHAPED ELECTRODE//PLASMA ATOM PHYS//VHF PLASMA