Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 5609 | 1534 | 18.7 | 58% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 688 | 12395 | LEAD FREE SOLDER//SOLDERING & SURFACE MOUNT TECHNOLOGY//PB FREE SOLDER |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | WAFER BONDING | Author keyword | 37 | 22% | 10% | 148 |
| 2 | ANODIC BONDING | Author keyword | 34 | 35% | 5% | 79 |
| 3 | SILICON WAFER BONDING | Author keyword | 27 | 78% | 1% | 18 |
| 4 | DIRECT BONDING | Author keyword | 12 | 30% | 2% | 34 |
| 5 | ROOM TEMPERATURE BONDING | Author keyword | 8 | 41% | 1% | 16 |
| 6 | WAFER DIRECT BONDING | Author keyword | 7 | 43% | 1% | 13 |
| 7 | HERMETICITY | Author keyword | 7 | 32% | 1% | 19 |
| 8 | AR BEAM | Author keyword | 6 | 80% | 0% | 4 |
| 9 | LATTICE UNDULATION | Author keyword | 6 | 80% | 0% | 4 |
| 10 | LOW TEMPERATURE BONDING | Author keyword | 6 | 27% | 1% | 20 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | WAFER BONDING | 37 | 22% | 10% | 148 | Search WAFER+BONDING | Search WAFER+BONDING |
| 2 | ANODIC BONDING | 34 | 35% | 5% | 79 | Search ANODIC+BONDING | Search ANODIC+BONDING |
| 3 | SILICON WAFER BONDING | 27 | 78% | 1% | 18 | Search SILICON+WAFER+BONDING | Search SILICON+WAFER+BONDING |
| 4 | DIRECT BONDING | 12 | 30% | 2% | 34 | Search DIRECT+BONDING | Search DIRECT+BONDING |
| 5 | ROOM TEMPERATURE BONDING | 8 | 41% | 1% | 16 | Search ROOM+TEMPERATURE+BONDING | Search ROOM+TEMPERATURE+BONDING |
| 6 | WAFER DIRECT BONDING | 7 | 43% | 1% | 13 | Search WAFER+DIRECT+BONDING | Search WAFER+DIRECT+BONDING |
| 7 | HERMETICITY | 7 | 32% | 1% | 19 | Search HERMETICITY | Search HERMETICITY |
| 8 | AR BEAM | 6 | 80% | 0% | 4 | Search AR+BEAM | Search AR+BEAM |
| 9 | LATTICE UNDULATION | 6 | 80% | 0% | 4 | Search LATTICE+UNDULATION | Search LATTICE+UNDULATION |
| 10 | LOW TEMPERATURE BONDING | 6 | 27% | 1% | 20 | Search LOW+TEMPERATURE+BONDING | Search LOW+TEMPERATURE+BONDING |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | ATOMIC REARRANGEMENT | 35 | 76% | 2% | 25 |
| 2 | HERMETICITY | 13 | 80% | 1% | 8 |
| 3 | ION DRIFT PROCESSES | 13 | 80% | 1% | 8 |
| 4 | ROOM TEMPERATURE WAFER | 12 | 75% | 1% | 9 |
| 5 | BEAM SURFACE ACTIVATION | 11 | 65% | 1% | 11 |
| 6 | 155 MU M WAVELENGTH LASERS | 11 | 78% | 0% | 7 |
| 7 | WAVELENGTH LASERS | 9 | 48% | 1% | 13 |
| 8 | DIELECTRIC ISOLATION | 7 | 64% | 0% | 7 |
| 9 | PLASMA ACTIVATION | 7 | 64% | 0% | 7 |
| 10 | SILICON FUSION | 6 | 80% | 0% | 4 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| Wafer level packaging of MEMS | 2008 | 87 | 33 | 45% |
| Adhesive wafer bonding | 2006 | 198 | 79 | 32% |
| Wafer direct bonding: tailoring adhesion between brittle materials | 1999 | 125 | 246 | 63% |
| Adhesion quantification methods for wafer bonding | 2005 | 50 | 181 | 78% |
| Semiconductor wafer bonding | 1998 | 106 | 69 | 67% |
| Anodic bonding | 2006 | 55 | 131 | 50% |
| Wafer direct bonding: From advance substrate engineering to future applications in micro/nanoelectronics | 2006 | 72 | 154 | 39% |
| Review of Test Methods Used for the Measurement of Hermeticity in Packages Containing Small Cavities | 2012 | 3 | 8 | 88% |
| Measurements of True Leak Rates of MEMS Packages | 2012 | 2 | 10 | 70% |
| SEMICONDUCTOR WAFER BONDING - A REVIEW OF INTERFACIAL PROPERTIES AND APPLICATIONS | 1992 | 77 | 92 | 58% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | WAFER BONDING | 7 | 67% | 0.4% | 6 |
| 2 | NANOMETER SCALE MFG SCI | 2 | 67% | 0.1% | 2 |
| 3 | ORION ELECT CO LTD | 2 | 67% | 0.1% | 2 |
| 4 | ZENTRUM MIKROTECHNOL | 2 | 22% | 0.4% | 6 |
| 5 | SP2M NRS | 1 | 38% | 0.2% | 3 |
| 6 | ADV MICROSYST INTEGRAT PACKAGING | 1 | 100% | 0.1% | 2 |
| 7 | OPTOELECT OKI | 1 | 100% | 0.1% | 2 |
| 8 | COMPUTAT DYNAM FRACTURE MECH | 1 | 27% | 0.2% | 3 |
| 9 | UBIQUITOUS MEMS MICRO ENGN UMEMSME | 1 | 16% | 0.3% | 5 |
| 10 | HIDEC | 1 | 33% | 0.1% | 2 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000123970 | WET ETCHING OF GLASS//DEEP GLASS ETCHING//TECH SUPPORT MACHINERY MET IND |
| 2 | 0.0000108214 | ION CUT//SURFACE BLISTERING//SMART CUT |
| 3 | 0.0000102111 | THROUGH SILICON VIA TSV//3 D INTEGRATION//KEEP OUT ZONE KOZ |
| 4 | 0.0000094946 | FLUXLESS BONDING//AU SN SOLDER//MAT MFG TECHNOL PROGRAM |
| 5 | 0.0000090403 | EPITAXIAL LIFT OFF//EPITAXIAL LIFT OFF ELO//PHOTONIC DOT |
| 6 | 0.0000088206 | BENZOCYCLOBUTENE//MICROWAVE MICROSYST//NON PLANAR DEVICES |
| 7 | 0.0000073155 | PIEZORESISTANCE//CAPACITIVE PRESSURE SENSOR//TOUCH MODE |
| 8 | 0.0000071410 | ANAL STRUCT MAT//UNITE RECH PHYS SOLIDE//TECHNOL SILICIUM |
| 9 | 0.0000059045 | UNCOOLED INFRARED IMAGING//OPTICAL READOUT//MICROBOLOMETER |
| 10 | 0.0000051958 | BIONEM BIO NANO ENGN TECHNOL MED//SOFT MATTER STRUCT GRP ID13//FLUIDIC INTERCONNECT |