Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 5865 | 1495 | 17.9 | 50% |
Classes in level above (level 2) |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | MEV ION IMPLANTATION | Author keyword | 3 | 35% | 1% | 8 |
| 2 | ACTIVATION EFFICIENCY | Author keyword | 3 | 57% | 0% | 4 |
| 3 | COLD IMPLANTS | Author keyword | 1 | 50% | 0% | 2 |
| 4 | ELECTRON ANNEALING | Author keyword | 1 | 100% | 0% | 2 |
| 5 | GA OUT DIFFUSION | Author keyword | 1 | 100% | 0% | 2 |
| 6 | III N V | Author keyword | 1 | 100% | 0% | 2 |
| 7 | RF DISSIPATION LOSS | Author keyword | 1 | 100% | 0% | 2 |
| 8 | AIIIBV SEMICONDUCTORS | Author keyword | 1 | 30% | 0% | 3 |
| 9 | ELECTRICAL ISOLATION | Author keyword | 1 | 19% | 0% | 5 |
| 10 | IMPLANT ISOLATION | Author keyword | 1 | 40% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | MEV ION IMPLANTATION | 3 | 35% | 1% | 8 | Search MEV+ION+IMPLANTATION | Search MEV+ION+IMPLANTATION |
| 2 | ACTIVATION EFFICIENCY | 3 | 57% | 0% | 4 | Search ACTIVATION+EFFICIENCY | Search ACTIVATION+EFFICIENCY |
| 3 | COLD IMPLANTS | 1 | 50% | 0% | 2 | Search COLD+IMPLANTS | Search COLD+IMPLANTS |
| 4 | ELECTRON ANNEALING | 1 | 100% | 0% | 2 | Search ELECTRON+ANNEALING | Search ELECTRON+ANNEALING |
| 5 | GA OUT DIFFUSION | 1 | 100% | 0% | 2 | Search GA+OUT+DIFFUSION | Search GA+OUT+DIFFUSION |
| 6 | III N V | 1 | 100% | 0% | 2 | Search III+N+V | Search III+N+V |
| 7 | RF DISSIPATION LOSS | 1 | 100% | 0% | 2 | Search RF+DISSIPATION+LOSS | Search RF+DISSIPATION+LOSS |
| 8 | AIIIBV SEMICONDUCTORS | 1 | 30% | 0% | 3 | Search AIIIBV+SEMICONDUCTORS | Search AIIIBV+SEMICONDUCTORS |
| 9 | ELECTRICAL ISOLATION | 1 | 19% | 0% | 5 | Search ELECTRICAL+ISOLATION | Search ELECTRICAL+ISOLATION |
| 10 | IMPLANT ISOLATION | 1 | 40% | 0% | 2 | Search IMPLANT+ISOLATION | Search IMPLANT+ISOLATION |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | IV ELEMENTS | 11 | 100% | 0% | 6 |
| 2 | THERMAL ANNEALED INP | 6 | 80% | 0% | 4 |
| 3 | HIGH RESISTIVITY | 6 | 33% | 1% | 15 |
| 4 | AS DUAL IMPLANTS | 6 | 100% | 0% | 4 |
| 5 | SHALLOW P LAYER | 6 | 100% | 0% | 4 |
| 6 | ALAS GAAS HETEROSTRUCTURES | 4 | 75% | 0% | 3 |
| 7 | ELECTRICAL ISOLATION | 4 | 23% | 1% | 14 |
| 8 | CO IMPLANT | 3 | 100% | 0% | 3 |
| 9 | DEPENDENT ELECTRICAL ACTIVATION | 3 | 100% | 0% | 3 |
| 10 | HIGH RESISTIVITY REGIONS | 3 | 100% | 0% | 3 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| ION-IMPLANTATION IN III-V SEMICONDUCTOR TECHNOLOGY | 1993 | 57 | 132 | 67% |
| IMPLANTATION IN INP TECHNOLOGY | 1989 | 4 | 38 | 74% |
| THE ROLE OF DEFECTS IN THE DIFFUSION AND ACTIVATION OF IMPURITIES IN ION-IMPLANTED SEMICONDUCTORS | 1984 | 16 | 41 | 68% |
| ION-IMPLANTATION DOPING OF SEMICONDUCTORS | 1988 | 6 | 28 | 43% |
| ION-IMPLANTATION DOPING OF SEMICONDUCTORS | 1988 | 4 | 28 | 43% |
| FAST DIFFUSION IN SEMICONDUCTORS | 1988 | 36 | 48 | 13% |
| SPUTTER DEPTH PROFILING OF MICROELECTRONIC STRUCTURES | 1983 | 41 | 153 | 22% |
| CW BEAM PROCESSING OF GALLIUM-ARSENIDE | 1984 | 0 | 17 | 71% |
| PROSPECTS FOR ION-BOMBARDMENT AND ION-IMPLANTATION IN GAAS AND INP DEVICE FABRICATION | 1981 | 32 | 7 | 43% |
| AUGER TECHNIQUES IN ANALYTICAL-CHEMISTRY - A REVIEW | 1983 | 14 | 15 | 13% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | ELECT ENGN COMP MATH | 1 | 33% | 0.1% | 2 |
| 2 | CAI IMPLANTAC ION | 1 | 50% | 0.1% | 1 |
| 3 | ESCUELA TECNOL INFORMAC | 1 | 50% | 0.1% | 1 |
| 4 | SURREY ION BEAM PL | 1 | 50% | 0.1% | 1 |
| 5 | WESTERN REG RUMENTAT | 1 | 50% | 0.1% | 1 |
| 6 | 3IT | 1 | 22% | 0.1% | 2 |
| 7 | SURREY ION BEAM PLICAT | 1 | 12% | 0.3% | 4 |
| 8 | ELE ENGN BUNKYO KU | 0 | 33% | 0.1% | 1 |
| 9 | SAITAMA TORY | 0 | 25% | 0.1% | 1 |
| 10 | MICRO NANOELECT DEVICES | 0 | 20% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000142434 | LUMILEDS LIGHTING//ZINC DIFFUSION//ACCEPTOR DIFFUSION |
| 2 | 0.0000132141 | QUANTUM WELL INTERMIXING//QUANTUM WELL INTERDIFFUSION//IMPURITY FREE DISORDERING |
| 3 | 0.0000124684 | FE DOPED INP//PHOSPHORUS VAPOR PRESSURE//WAFER ANNEALING |
| 4 | 0.0000113456 | AMORPHOUS III V SEMICONDUCTORS//GAAS1 XNX THIN FILMS//SUNAG |
| 5 | 0.0000102546 | IBIEC//SOLID PHASE EPITAXIAL GROWTH//LATERAL SOLID PHASE EPITAXY |
| 6 | 0.0000098849 | ATSUGI ELECT COMMUN S FUNCT DEVICE DEV//INTEGRATED PROD BUSINESS UNIT//SINGLE VOLTAGE SUPPLY |
| 7 | 0.0000082327 | EL2//CARBON ACCEPTOR//SEMI INSULATING GALLIUM ARSENIDE |
| 8 | 0.0000080981 | CARBON DOPING//CBR4//C DOPED GAAS |
| 9 | 0.0000080131 | OVAL DEFECTS//SEEIE//GA AS BI SOLUTION |
| 10 | 0.0000079881 | CHANNELED PARTICLE//NONEQUILIBRIUM STATISTICAL THERMODYNAMICS//QUASITEMPERATURE |