Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
6458 | 1414 | 19.1 | 57% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1684 | 6200 | ADV SUBSUR E IMAGING//PHOTODETECTORS//PHOTODIODES |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | IMPACT IONIZATION | Author keyword | 18 | 17% | 7% | 99 |
2 | AVALANCHE PHOTODIODES APDS | Author keyword | 10 | 33% | 2% | 26 |
3 | AVALANCHE PHOTODIODE APD | Author keyword | 10 | 28% | 2% | 31 |
4 | DEAD SPACE EFFECT | Author keyword | 9 | 64% | 1% | 9 |
5 | AVALANCHE PHOTODIODES | Author keyword | 9 | 15% | 4% | 55 |
6 | IONIZATION COEFFICIENTS | Author keyword | 8 | 60% | 1% | 9 |
7 | EXCESS NOISE FACTOR | Author keyword | 8 | 28% | 2% | 23 |
8 | INITIAL ENERGY EFFECT | Author keyword | 6 | 80% | 0% | 4 |
9 | THIN AVALANCHE PHOTODIODES | Author keyword | 6 | 80% | 0% | 4 |
10 | AVALANCHE MULTIPLICATION | Author keyword | 5 | 19% | 2% | 26 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | IMPACT IONIZATION COEFFICIENTS | 53 | 61% | 4% | 57 |
2 | MULTIPLICATION NOISE | 42 | 59% | 3% | 48 |
3 | DEAD SPACE | 36 | 31% | 7% | 98 |
4 | SEPARATE ABSORPTION | 35 | 59% | 3% | 39 |
5 | GAIN BANDWIDTH PRODUCT | 27 | 44% | 3% | 47 |
6 | P I N DIODES | 15 | 59% | 1% | 17 |
7 | IMPACT IONIZATION RATES | 15 | 71% | 1% | 12 |
8 | INGAAS INALAS SUPERLATTICE | 15 | 88% | 0% | 7 |
9 | GAAS AVALANCHE PHOTODIODES | 14 | 100% | 0% | 7 |
10 | ENGINEERED MULTIPLICATION REGION | 11 | 69% | 1% | 9 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Nonlocal impact ionization and avalanche multiplication | 2010 | 3 | 66 | 92% |
Invited review - Superlattice and multiquantum well avalanche photodetectors: physics, concepts and performance | 2000 | 7 | 108 | 94% |
Superlattice avalanche photodiodes for optical communications | 1998 | 7 | 30 | 93% |
Characterization and modeling of SAGCM InP/InGaAs avalanche photodiodes for multigigabit optical fiber communications | 1998 | 8 | 64 | 81% |
PHYSICS OF AVALANCHE PHOTODIODES | 1985 | 70 | 70 | 67% |
Reliability of InGaAs/InP based separate absorption grading multiplication avalanche photodiodes | 1996 | 8 | 27 | 74% |
Review of reliability issues of metal-semiconductor-metal and avalanche photodiode photonic detectors | 1999 | 7 | 37 | 54% |
IMPACT IONIZATION IN AIIIBV SEMICONDUCTORS IN HIGH ELECTRIC-FIELDS | 1987 | 14 | 24 | 63% |
HOT-ELECTRONS IN SEMICONDUCTORS | 1986 | 3 | 2 | 100% |
COMPOSITIONALLY GRADED SEMICONDUCTORS AND THEIR DEVICE APPLICATIONS | 1986 | 24 | 26 | 38% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | FDN STUDIES EXTENS EDUC | 5 | 63% | 0.4% | 5 |
2 | CORP ND | 2 | 67% | 0.1% | 2 |
3 | FIBER OPT DEVICE | 1 | 50% | 0.1% | 2 |
4 | URA 800 CNRS | 1 | 50% | 0.1% | 2 |
5 | CNRS 7603 | 1 | 50% | 0.1% | 1 |
6 | HIGH TECHNOL MAT ELECT | 1 | 50% | 0.1% | 1 |
7 | LSI MFG GRP | 1 | 50% | 0.1% | 1 |
8 | LUMINESCENSE OPT INFORMAT | 1 | 50% | 0.1% | 1 |
9 | SEMICONDUCTOR ENGN | 1 | 50% | 0.1% | 1 |
10 | SYST DEVICES FUNDMENTAL | 1 | 50% | 0.1% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000136184 | IN082GA018AS//SHORT WAVELENGTH INFRARED//INFRARED IMAGING MAT DETECTORS |
2 | 0.0000124395 | HIGH POWER PHOTODIODE//HIGH POWER PHOTODIODES//UNITRAVELING CARRIER PHOTODIODE UTC PD |
3 | 0.0000116905 | ADV STUDY RADIOPHYS ELECT//IMPATT DIODES//LARGE SIGNAL SIMULATION |
4 | 0.0000115583 | FLUCTUAT//PLANAR GUNN DIODE//ELLIPSOIDAL VALLEYS |
5 | 0.0000105059 | ENERGY TRANSPORT MODEL//HYDRODYNAMICAL MODELS//BOLTZMANN POISSON SYSTEM |
6 | 0.0000097481 | LUMILEDS LIGHTING//ZINC DIFFUSION//ACCEPTOR DIFFUSION |
7 | 0.0000095500 | SIPM//SILICON PHOTOMULTIPLIER//SINGLE PHOTON AVALANCHE DIODE SPAD |
8 | 0.0000088337 | FESTKORPERPHYS 1//MO N SI MO//METAL SEMICONDUCTOR METAL STRUCTURES |
9 | 0.0000075958 | GALNAS//SULFUR DOPED INP//LASER AND LASER APPLICATIONS |
10 | 0.0000072840 | BELOW GAP EXCITATION//NONRADIATIVE RECOMBINATION//BELOW GAP STATES |