Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 7874 | 1241 | 14.5 | 34% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 1528 | 6892 | CD1 XMNXTE//THIN FILM PHYS GRP//LEAD TELLURIDE |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | CHERNOVTSY | Address | 10 | 61% | 1% | 11 |
| 2 | IMPURITY IN SEMICONDUCTORS | Author keyword | 6 | 80% | 0% | 4 |
| 3 | FAR INFRARED REFLECTIVITY | Author keyword | 5 | 45% | 1% | 9 |
| 4 | DX LIKE CENTER | Author keyword | 2 | 67% | 0% | 2 |
| 5 | LEAD TIN TELLURIUM | Author keyword | 2 | 67% | 0% | 2 |
| 6 | ABDULLAEV PHYS | Address | 1 | 16% | 1% | 8 |
| 7 | ELECTRICAL CONDUCTIVITY COEFFICIENT | Author keyword | 1 | 100% | 0% | 2 |
| 8 | LEAD MANGANESE TELLURIDE | Author keyword | 1 | 100% | 0% | 2 |
| 9 | PLASMON PHONON INTERACTION | Author keyword | 1 | 100% | 0% | 2 |
| 10 | PLASMON PHONON INTERACTION | Author keyword | 1 | 50% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | MIXED VALENCE IMPURITIES | 12 | 86% | 0% | 6 |
| 2 | PB078SN022TE | 11 | 100% | 0% | 6 |
| 3 | LEAD TELLURIDE | 8 | 20% | 3% | 37 |
| 4 | PB1 XGDXTE | 8 | 100% | 0% | 5 |
| 5 | PB1 XSNXTE | 7 | 37% | 1% | 15 |
| 6 | PB1 XSNXTE ALLOYS | 7 | 67% | 0% | 6 |
| 7 | PB075SN025TE SINGLE CRYSTALS | 6 | 100% | 0% | 4 |
| 8 | PB1 XGEXTE ALLOYS | 6 | 100% | 0% | 4 |
| 9 | PBTE TI | 4 | 75% | 0% | 3 |
| 10 | PBTEGA | 4 | 75% | 0% | 3 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| Mixed-valence impurities in lead telluride-based solid solutions | 2002 | 124 | 107 | 90% |
| CARRIER TRANSPORT AND NONEQUILIBRIUM PHENOMENA IN DOPED PBTE AND RELATED MATERIALS | 1993 | 103 | 75 | 84% |
| Thallium-doped lead chalcogenides: investigation methods and properties | 1998 | 17 | 30 | 93% |
| Hopping conduction via strongly localized impurity states of indium in PbTe and its solid solutions | 2002 | 31 | 24 | 100% |
| DEEP AND RESONANCE STATES IN A(IV)B(VI) SEMICONDUCTORS | 1985 | 103 | 13 | 85% |
| Doped lead telluride-based semiconductors: New possibilities for detection of Teraherz radiation | 2004 | 10 | 25 | 92% |
| SELF-COMPENSATION OF ELECTRICALLY ACTIVE IMPURITIES BY INTRINSIC DEFECTS IN IV-VI SEMICONDUCTORS | 1994 | 13 | 16 | 100% |
| High pressure spectroscopy of deep irradiation-induced states in IV-VI semiconductors (Review) | 1996 | 6 | 12 | 100% |
| Mossbauer studies of negative-U tin centers in lead chalcogenides | 1999 | 5 | 36 | 83% |
| NARROW-GAP LEAD SALTS | 1983 | 57 | 44 | 68% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | CHERNOVTSY | 10 | 61% | 0.9% | 11 |
| 2 | ABDULLAEV PHYS | 1 | 16% | 0.6% | 8 |
| 3 | PROBLEMS SEMICOND MAT SCI | 1 | 100% | 0.2% | 2 |
| 4 | CHERNOVTSY BRANCH | 1 | 16% | 0.4% | 5 |
| 5 | GRP ETUDE MAT OPTOELECT | 1 | 50% | 0.1% | 1 |
| 6 | ICTM MICROELECT TECHNOL SINGLE CRYSTALS | 1 | 50% | 0.1% | 1 |
| 7 | LASER INVEST | 1 | 50% | 0.1% | 1 |
| 8 | ABDULLAYEV PHYS | 0 | 33% | 0.1% | 1 |
| 9 | DEV PROD | 0 | 17% | 0.2% | 2 |
| 10 | PHYS PL AUTOMAT | 0 | 10% | 0.2% | 3 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000195243 | THIN FILM PHYS GRP//ELECT PROPERTIES MAT//HALBLEITER FESTKORPERPHYS |
| 2 | 0.0000188309 | SYMBIOT ENVIRONM SYST ENGN//GE1 XMNXTE//SP F HYBRIDIZATION |
| 4 | 0.0000157900 | FERROELECTRIC SEMICONDUCTOR//LEAD SELENITE//LITHIUM DOPED ZINC OXIDE |
| 5 | 0.0000066179 | BI SB SOLID SOLUTIONS//QUENCH DEPOSITED FILM//VARIABLE VALENCE |
| 6 | 0.0000056592 | BISMUTH TELLURIDE//BI2TE3//THERMOELECTRIC MATERIALS |
| 7 | 0.0000054481 | AL SB//ALSB//BILAYER MIXING |
| 8 | 0.0000049626 | BOSON FERMION MODEL//BOSON FERMION MODELS//FLAT STEEP BAND |
| 9 | 0.0000046920 | SN TE//ENTHALPIES OF MIXING//FREE ENTHALPY OF FORMATION |
| 10 | 0.0000045549 | TRIANGULAR BOUND POTENTIAL//LINEAR COMBINATION OPERATOR//COULOMB BOUND POTENTIAL |