Class information for:
Level 1: ELECTRON COUNTING MODEL//SUR E STUDY//GA ADATOM

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
8084 1220 25.1 77%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
1376 7700 GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ELECTRON COUNTING MODEL Author keyword 18 89% 1% 8
2 SUR E STUDY Address 12 86% 0% 6
3 GA ADATOM Author keyword 8 100% 0% 5
4 INDIUM ARSENIDE Author keyword 6 14% 3% 38
5 ELECTRON COUNTING RULE Author keyword 6 100% 0% 4
6 HCL ISOPROPANOL TREATMENT Author keyword 6 100% 0% 4
7 GAAS SURFACES Author keyword 5 63% 0% 5
8 GAAS001 SURFACE Author keyword 5 63% 0% 5
9 T BUTYLPHOSPHINE Author keyword 4 75% 0% 3
10 GAAS001 Author keyword 4 36% 1% 9

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 ELECTRON COUNTING MODEL 18 89% 1% 8 Search ELECTRON+COUNTING+MODEL Search ELECTRON+COUNTING+MODEL
2 GA ADATOM 8 100% 0% 5 Search GA+ADATOM Search GA+ADATOM
3 INDIUM ARSENIDE 6 14% 3% 38 Search INDIUM+ARSENIDE Search INDIUM+ARSENIDE
4 ELECTRON COUNTING RULE 6 100% 0% 4 Search ELECTRON+COUNTING+RULE Search ELECTRON+COUNTING+RULE
5 HCL ISOPROPANOL TREATMENT 6 100% 0% 4 Search HCL+ISOPROPANOL+TREATMENT Search HCL+ISOPROPANOL+TREATMENT
6 GAAS SURFACES 5 63% 0% 5 Search GAAS+SURFACES Search GAAS+SURFACES
7 GAAS001 SURFACE 5 63% 0% 5 Search GAAS001+SURFACE Search GAAS001+SURFACE
8 T BUTYLPHOSPHINE 4 75% 0% 3 Search T+BUTYLPHOSPHINE Search T+BUTYLPHOSPHINE
9 GAAS001 4 36% 1% 9 Search GAAS001 Search GAAS001
10 2 X 4 3 100% 0% 3 Search 2+X+4 Search 2+X+4

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 2X4 50 88% 2% 23
2 GAAS100 2X4 37 74% 2% 28
3 GAAS100 SURFACES 35 37% 6% 74
4 GROWN GAAS001 30 69% 2% 25
5 SEMICONDUCTOR 001 SURFACES 29 88% 1% 14
6 ELECTRON COUNTING MODEL 24 82% 1% 14
7 GAAS001 24 13% 13% 163
8 2X2 RECONSTRUCTIONS 23 60% 2% 25
9 GAAS001 SURFACES 21 33% 4% 53
10 POLAR SEMICONDUCTOR SURFACES 21 64% 2% 21

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Surface reconstructions on GaAs(001) 2008 52 127 83%
III-V compound semiconductor (001) surfaces 2002 82 98 81%
Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces 1997 130 149 58%
Arsenic-rich GaAs(001) surface structure 2005 32 135 71%
Self-organized growth on GaAs surfaces 2004 76 154 30%
Semiconductor surface reconstruction: The structural chemistry of two-dimensional surface compounds 1996 184 197 24%
Do we understand the structure of the gallium-rich surface of GaAs(001)? Experimental and theoretical approaches 2002 11 35 69%
Atomic-scale homoepitaxial growth simulations of reconstructed III-V surfaces 2001 37 147 29%
Structure and surface core-level shifts of GaAs surfaces prepared by molecular-beam epitaxy 2000 12 63 46%
Scanning tunneling microscopy of the GaAs(001) surface reconstructions 1997 1 77 79%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 SUR E STUDY 12 86% 0.5% 6
2 COMP SCI ENGN SCI PHYS 2 33% 0.5% 6
3 ELECT TELECOMUNICAT 2 43% 0.2% 3
4 CMRC2 1 100% 0.2% 2
5 FESTKORPERPHYS THEORET OPT 1 100% 0.2% 2
6 LMPS 1 25% 0.2% 3
7 UFR SCI MAT 1 19% 0.3% 4
8 HARRISON M RANDALL 1 33% 0.2% 2
9 QUANTUM SIMULAT GRP 1 23% 0.2% 3
10 DIPARTIMENTO FIS INFORMAT MATEMAT FIM 1 50% 0.1% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000237378 SURFACE PHOTOABSORPTION//REFLECTANCE ANISOTROPY SPECTROSCOPY//REFLECTION ANISOTROPY SPECTROSCOPY
2 0.0000180162 HIGH RESOLUTION LOW ENERGY ELECTRON DIFFRACTION//GAAS GAP//SURFACE RESONANCES
3 0.0000173720 WEBSTER//ADIABATIC BOND CHARGE MODEL//INAS110
4 0.0000169595 REFLECTION MASS SPECTROMETRY//2D ISLAND//INTERFACE DISORDER
5 0.0000146990 ATOMIC HYDROGEN CLEANING//ECR HYDROGEN PLASMA//IN SITU VACUUM PROCESS
6 0.0000124405 SULFUR PASSIVATION//PHOSPHIDIZATION//PHOSPHINE PLASMA
7 0.0000092935 LATERAL P N JUNCTION//411A GAAS SUBSTRATES//411A
8 0.0000090676 INDIUM PHOSPHIDE100//INTERACTION IONS MATTER//SIMULATION METHOD TRIM
9 0.0000087609 FAK PHYS CHEM//INDIUM SEGREGATION//IN DESORPTION
10 0.0000086323 RADIAT NUCL DETECT MAT ANAL//ENGN NANOSCI NANOTECHNOL INITIAT//INTERATOMIC ENERGY