Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 8186 | 1210 | 21.2 | 54% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 1597 | 6577 | ELLIPSOMETRY//MUELLER MATRIX//NANOOPT PROPERTY |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | NANOOPT PROPERTY | Address | 28 | 52% | 3% | 38 |
| 2 | PLASMA PHYS PLASMA SOURCES | Address | 19 | 63% | 2% | 19 |
| 3 | NON UNIFORM THIN FILMS | Author keyword | 9 | 83% | 0% | 5 |
| 4 | JOINT MODERN METROL | Address | 6 | 71% | 0% | 5 |
| 5 | CDMGTE | Author keyword | 3 | 60% | 0% | 3 |
| 6 | RG PLASMA TECHNOL | Address | 3 | 60% | 0% | 3 |
| 7 | SPECTROSCOPIC REFLECTOMETRY | Author keyword | 3 | 35% | 0% | 6 |
| 8 | NANO OPT PROPERTY | Address | 2 | 38% | 0% | 5 |
| 9 | ALGAAS GAAS SOLAR CELLS | Author keyword | 2 | 67% | 0% | 2 |
| 10 | AS S CHALCOGENIDE FILMS | Author keyword | 2 | 67% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | SPECTROSCOPIC ELLIPSOMETRY | 25 | 11% | 18% | 217 |
| 2 | MODEL DIELECTRIC CONSTANTS | 19 | 74% | 1% | 14 |
| 3 | OPTICAL DISPERSION RELATIONS | 13 | 69% | 1% | 11 |
| 4 | DIELECTRIC FUNCTIONS | 10 | 28% | 3% | 31 |
| 5 | DIELECTRIC FUNCTION | 10 | 11% | 7% | 89 |
| 6 | ION IMPLANTED SEMICONDUCTORS | 9 | 83% | 0% | 5 |
| 7 | SI100 WAFERS | 8 | 75% | 0% | 6 |
| 8 | DAMAGE DEPTH PROFILES | 7 | 67% | 0% | 6 |
| 9 | INTERBAND CRITICAL POINTS | 6 | 24% | 2% | 24 |
| 10 | SPECTROSCOPIC REFLECTOMETRY | 6 | 80% | 0% | 4 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| Progress in the room-temperature optical functions of semiconductors | 2002 | 60 | 220 | 36% |
| ELLIPSOMETRY OF THIN FILM SYSTEMS | 2000 | 24 | 79 | 46% |
| Determination of doping effects on Si and GaAs bulk samples properties by photothermal investigations | 2007 | 4 | 4 | 50% |
| DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV | 1983 | 2146 | 20 | 45% |
| REFRACTION OF LIGHT IN SEMICONDUCTORS (REVIEW) | 1988 | 30 | 28 | 29% |
| ELLIPSOMETRIC STUDIES OF ELECTRONIC INTERBAND-TRANSITIONS IN CDXHG1-XTE | 1984 | 122 | 29 | 28% |
| THE CHARACTERIZATION OF MATERIALS BY SPECTROSCOPIC ELLIPSOMETRY | 1984 | 2 | 15 | 67% |
| ELLIPSOMETRY IN THIN-FILM ANALYSIS | 1981 | 43 | 11 | 18% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | NANOOPT PROPERTY | 28 | 52% | 3.1% | 38 |
| 2 | PLASMA PHYS PLASMA SOURCES | 19 | 63% | 1.6% | 19 |
| 3 | JOINT MODERN METROL | 6 | 71% | 0.4% | 5 |
| 4 | RG PLASMA TECHNOL | 3 | 60% | 0.2% | 3 |
| 5 | NANO OPT PROPERTY | 2 | 38% | 0.4% | 5 |
| 6 | CZECH METROL | 2 | 33% | 0.4% | 5 |
| 7 | CDP BAGNEUX | 1 | 100% | 0.2% | 2 |
| 8 | JOINT CHAIR EXPT PHYS | 1 | 100% | 0.2% | 2 |
| 9 | PHOTOVOLTA INNOVAT COMMERCIALIZAT | 1 | 23% | 0.4% | 5 |
| 10 | OPTOELECT CONVERGENCE SYST | 1 | 12% | 0.6% | 7 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000192497 | IMAGING ELLIPSOMETRY//TOTAL INTERNAL REFLECTION ELLIPSOMETRY//ROTATING POLARIZER ANALYZER ELLIPSOMETER |
| 2 | 0.0000191452 | ALUMINUM DOPED ZINC OXIDE ZNOAL//ABELES EQUATIONS//OPTICAL CONDUCTIVITY MEASUREMENT |
| 3 | 0.0000143014 | SURFACE PHOTOABSORPTION//REFLECTANCE ANISOTROPY SPECTROSCOPY//REFLECTION ANISOTROPY SPECTROSCOPY |
| 4 | 0.0000112766 | INFRARED ELLIPSOMETRY//MICROELECT OPT MAT//BERLIN |
| 5 | 0.0000097961 | PHOTOREFLECTANCE//FIELD INDUCED CHANGE IN THE PSEUDODIELECTRIC FUNCTION//PHOTOELLIPSOMETRY |
| 6 | 0.0000064850 | PHASE MODULATED FLOW BIREFRINGENCE//BICOZAMYCIN//FLEXIBLE CHAIN POLYMER |
| 7 | 0.0000062050 | ABSORBING SUBSTRATE//SINGLE LAYER COATING//ELLIPSOMETRY PLICAT S |
| 8 | 0.0000059530 | SIMOX//BURIED OXIDE LAYER//CONTACTLESS I V METHOD |
| 9 | 0.0000058032 | ALGAAS HETEROSTRUCTURES//EPITAXY ETCHING//QUANTUM WELL LASER STRUCTURES |
| 10 | 0.0000057549 | FONORITON SCI//ISOTOPIC SILICON//ICHHPS |