Class information for:
Level 1: GE001//C4 X 2//C4X2

Basic class information

ID Publications Average number
of references
Avg. shr. active
ref. in WoS
8890 1139 25.9 78%



Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)



ID, lev.
above
Publications Label for level above
666 12577 SCANNING TUNNELING MICROSCOPY//ATOM WI LAYERS//VICINAL SINGLE CRYSTAL SURFACES

Terms with highest relevance score



Rank Term Type of term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 GE001 Author keyword 11 69% 1% 9
2 C4 X 2 Author keyword 4 75% 0% 3
3 C4X2 Author keyword 3 100% 0% 3
4 P2 X 2 Author keyword 3 100% 0% 3
5 TIME RESOLVING SIMULATION Author keyword 3 100% 0% 3
6 SI001 Author keyword 2 13% 1% 17
7 TAKAYANAGI PARTICLE SUR E PROJECT Address 2 32% 1% 6
8 GE SI001 Author keyword 2 67% 0% 2
9 MISSING DIMER Author keyword 2 67% 0% 2
10 SI100 SURFACE Author keyword 1 19% 1% 7

Web of Science journal categories

Author Key Words



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
LCSH search Wikipedia search
1 GE001 11 69% 1% 9 Search GE001 Search GE001
2 C4 X 2 4 75% 0% 3 Search C4+X+2 Search C4+X+2
3 C4X2 3 100% 0% 3 Search C4X2 Search C4X2
4 P2 X 2 3 100% 0% 3 Search P2+X+2 Search P2+X+2
5 TIME RESOLVING SIMULATION 3 100% 0% 3 Search TIME+RESOLVING+SIMULATION Search TIME+RESOLVING+SIMULATION
6 SI001 2 13% 1% 17 Search SI001 Search SI001
7 GE SI001 2 67% 0% 2 Search GE+SI001 Search GE+SI001
8 MISSING DIMER 2 67% 0% 2 Search MISSING+DIMER Search MISSING+DIMER
9 SI100 SURFACE 1 19% 1% 7 Search SI100+SURFACE Search SI100+SURFACE
10 EMPIRICAL TIGHT BINDING 1 38% 0% 3 Search EMPIRICAL+TIGHT+BINDING Search EMPIRICAL+TIGHT+BINDING

Key Words Plus



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 BUCKLED DIMERS 62 64% 5% 61
2 SI100 SURFACE 45 23% 15% 169
3 LOW COVERAGE PHASES 40 77% 2% 27
4 GE001 23 30% 6% 65
5 SI AD DIMERS 23 59% 2% 26
6 SI001 SURFACE 21 19% 9% 103
7 PB SI001 SYSTEM 21 90% 1% 9
8 FLIP FLOP MOTION 19 70% 1% 16
9 AD DIMER 18 83% 1% 10
10 GE001 SURFACE 17 52% 2% 23

Journals

Reviews



Title Publ. year Cit. Active references % act. ref.
to same field
The Ge(001) surface 2003 136 100 49%
Ground state of the Si(001) surface revisited - is seeing believing? 2004 31 37 97%
Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment 2014 2 167 40%
Structural phase transition on Si(001) and Ge(001) surfaces 1995 28 37 84%
Recent ARPES experiments on quasi-1D bulk materials and artificial structures 2009 20 210 17%
An atomistic view of Si(001) homoepitaxy 1997 21 94 48%
Order-disorder transition on Si(001) 1995 6 11 82%
Theoretical studies about adsorption on silicon surface 2007 0 100 53%
Lattice Dynamics of Solids, Surfaces, and Nanostructures 2014 0 53 40%
Fundamental mechanisms of film growth 1999 6 111 33%

Address terms



Rank Address term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ.
in class
1 TAKAYANAGI PARTICLE SUR E PROJECT 2 32% 0.5% 6
2 SOLID STATE PHYS GRP 1 10% 0.7% 8
3 C TJSTBUNKYO KU 1 50% 0.1% 1
4 CEMES MANA SATELLITE 1 50% 0.1% 1
5 CIENCAS MAT CONDENSADA 1 50% 0.1% 1
6 CNRS PHYS SOLIDE 1 50% 0.1% 1
7 MAT SCIBUNKYO KU 1 50% 0.1% 1
8 PHYS CAMP 1 50% 0.1% 1
9 CIENCIAS MAT CONSENSADA 0 33% 0.1% 1
10 PLASMA SUR E SCI 0 33% 0.1% 1

Related classes at same level (level 1)



Rank Relatedness score Related classes
1 0.0000268312 SURFACTANT MEDIATED EPITAXY//BI NANOLINES//SI100 2X1 SB
2 0.0000208533 HIGH INDEX SINGLE CRYSTAL SURFACES//SI110//SI113
3 0.0000195062 HYDROGEN SURFACTANT//AUSTRALIAN COUNCIL EXCELLENCE QUANTUM COM//EXCELLENCE QUANTUM COMPUTAT COMMUN TECHNOL
4 0.0000179155 SI111 2X1//CROSS SECTIONAL STM//IV PHYS
5 0.0000175538 PHYSICOCHIM MOLEC ORSAY//SURFACE STRUCTURE AND ROUGHNESS//DESORPTION INDUCED BY ELECTRON STIMULATION
6 0.0000162825 ORGANIC SEMICONDUCTOR INTERFACE//SI100//GE100
7 0.0000161430 DAS STRUCTURE//SN GE111//SI111 7 X 7
8 0.0000158993 CEA SERV RECH SUR ES IRRADIAT MAT//CHIM ORGAN THEORIQUE//DISPLAY DEVICE CO
9 0.0000156878 VICINAL SINGLE CRYSTAL SURFACES//STEPPED SINGLE CRYSTAL SURFACES//STEP WANDERING
10 0.0000131544 TRANSLATIONAL KINETIC ENERGY//POINT DEFECT GENERATION//OXYGEN MOLECULAR BEAM