Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 9059 | 1125 | 16.2 | 43% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 372 | 16511 | SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | LIFETIME CONTROL | Author keyword | 13 | 47% | 2% | 21 |
| 2 | SEMI INSULATING MATERIALS | Author keyword | 3 | 100% | 0% | 3 |
| 3 | POWER DIODES | Author keyword | 3 | 30% | 1% | 8 |
| 4 | LOCAL LIFETIME CONTROL | Author keyword | 2 | 44% | 0% | 4 |
| 5 | FLEROV NUCL REACT DUBNA | Address | 2 | 67% | 0% | 2 |
| 6 | IMPURITY INTERSTITIALS | Author keyword | 2 | 67% | 0% | 2 |
| 7 | MICROWAVE PROBED PHOTOCONDUCTIVITY | Author keyword | 2 | 50% | 0% | 3 |
| 8 | TRIVACANCY | Author keyword | 2 | 50% | 0% | 3 |
| 9 | HRPITS | Author keyword | 2 | 36% | 0% | 4 |
| 10 | SI PHOTODIODE | Author keyword | 2 | 36% | 0% | 4 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | LIFETIME CONTROL | 13 | 47% | 2% | 21 | Search LIFETIME+CONTROL | Search LIFETIME+CONTROL |
| 2 | SEMI INSULATING MATERIALS | 3 | 100% | 0% | 3 | Search SEMI+++INSULATING+MATERIALS | Search SEMI+++INSULATING+MATERIALS |
| 3 | POWER DIODES | 3 | 30% | 1% | 8 | Search POWER+DIODES | Search POWER+DIODES |
| 4 | LOCAL LIFETIME CONTROL | 2 | 44% | 0% | 4 | Search LOCAL+LIFETIME+CONTROL | Search LOCAL+LIFETIME+CONTROL |
| 5 | IMPURITY INTERSTITIALS | 2 | 67% | 0% | 2 | Search IMPURITY+INTERSTITIALS | Search IMPURITY+INTERSTITIALS |
| 6 | MICROWAVE PROBED PHOTOCONDUCTIVITY | 2 | 50% | 0% | 3 | Search MICROWAVE+PROBED+PHOTOCONDUCTIVITY | Search MICROWAVE+PROBED+PHOTOCONDUCTIVITY |
| 7 | TRIVACANCY | 2 | 50% | 0% | 3 | Search TRIVACANCY | Search TRIVACANCY |
| 8 | HRPITS | 2 | 36% | 0% | 4 | Search HRPITS | Search HRPITS |
| 9 | SI PHOTODIODE | 2 | 36% | 0% | 4 | Search SI+PHOTODIODE | Search SI+PHOTODIODE |
| 10 | HIGH TEMPERATURE IRRADIATION | 2 | 29% | 0% | 5 | Search HIGH+TEMPERATURE+IRRADIATION | Search HIGH+TEMPERATURE+IRRADIATION |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | IRRADIATED SILICON | 22 | 22% | 8% | 89 |
| 2 | DIVACANCY | 19 | 36% | 4% | 43 |
| 3 | LIFETIME CONTROL | 11 | 44% | 2% | 19 |
| 4 | PROTON IRRADIATED SILICON | 8 | 62% | 1% | 8 |
| 5 | 88 K | 6 | 100% | 0% | 4 |
| 6 | I N DIODE | 4 | 42% | 1% | 8 |
| 7 | BOMBARDED SILICON | 4 | 40% | 1% | 8 |
| 8 | RADIATION DEFECTS | 4 | 17% | 2% | 20 |
| 9 | TRANSIENT SPECTROSCOPY CHARACTERIZATION | 3 | 100% | 0% | 3 |
| 10 | DIVACANCIES | 2 | 20% | 1% | 10 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| FRENKEL PAIRS IN GERMANIUM AND SILICON (REVIEW) | 1992 | 20 | 14 | 64% |
| Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si | 2004 | 15 | 92 | 29% |
| Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles | 2001 | 30 | 77 | 17% |
| Formation efficiency of the thermostable recombination centres in irradiated silicon p-n structures | 1996 | 0 | 6 | 67% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | FLEROV NUCL REACT DUBNA | 2 | 67% | 0.2% | 2 |
| 2 | PHYS PHYS ELECT | 2 | 23% | 0.6% | 7 |
| 3 | CRMR2 | 1 | 100% | 0.2% | 2 |
| 4 | MPI HIGH MAGNET FIELD | 1 | 50% | 0.2% | 2 |
| 5 | DYNAMITRON TANDEM | 1 | 18% | 0.4% | 4 |
| 6 | CHAIR POWER ELECT EMC | 1 | 50% | 0.1% | 1 |
| 7 | KAWAMURA | 1 | 50% | 0.1% | 1 |
| 8 | NANOTECHNOL OPEN | 1 | 50% | 0.1% | 1 |
| 9 | RF TEST TECHNOL | 1 | 50% | 0.1% | 1 |
| 10 | SLOVAK OFF STANDARDS METROL TESTING | 1 | 50% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000218208 | CLUSTER OF DEFECTS//GROUP II ELEMENTS//SI CD |
| 2 | 0.0000167362 | ELECT MAT DEVICES NANOSTRUCT//L DLTS//CNR IMM MATIS |
| 3 | 0.0000115898 | NONIONIZING ENERGY LOSS NIEL//DISPLACEMENT DAMAGE DOSE//NONIONIZING ENERGY LOSS |
| 4 | 0.0000096719 | GETTERING//GETTERING EFFICIENCY//SI AU |
| 5 | 0.0000092338 | HYDROGEN IN SILICON//MULTIVACANCY//HYDROGEN IN SI |
| 6 | 0.0000089933 | EMISSION RATE SPECTRUM//CAPACITANCE TRANSIENTS//DLTS RESOLUTION |
| 7 | 0.0000087285 | OXYGEN PRECIPITATION//GROWN IN DEFECT//CZOCHRALSKI SILICON |
| 8 | 0.0000064450 | RADIATION HARDNESS//SUPER LHC//SILICON DETECTORS |
| 9 | 0.0000063922 | TRANSIENT ENHANCED DIFFUSION//SWAMP//PAIR DIFFUSION MODEL |
| 10 | 0.0000060313 | POST IMPLANTATION DEFECTS//MULTI INTERFACE SOLAR CELL//PLANAR NANOSTRUCTURE |