Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 1361 | 7789 | 22.5 | 70% |
Classes in level above (level 3) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 15 | 127408 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
Classes in level below (level 1) |
| ID, lev. below | Publications | Label for level below |
|---|---|---|
| 60 | 4562 | HFO2//HIGH K//METAL GATE |
| 9405 | 1090 | TANTALUM OXIDE//TANTALUM PENTOXIDE//TA2O5 |
| 13275 | 784 | PASSIVE COUNTER ELECTRODE//CEO2 THIN FILM//ION STORAGE CAPACITY |
| 17244 | 546 | EPITAXIAL OXIDES//S UNICAT//SI001 SUBSTRATES |
| 18137 | 502 | METAL INSULATOR METAL MIM CAPACITOR//VOLTAGE COEFFICIENT OF CAPACITANCE VCC//METAL INSULATOR METAL MIM |
| 23008 | 305 | BW TECHNOL//MGO FILM//KANAGAWA IND TECHNOL |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | HFO2 | Author keyword | 147 | 40% | 4% | 290 |
| 2 | HIGH K | Author keyword | 126 | 35% | 4% | 295 |
| 3 | HIGH K DIELECTRICS | Author keyword | 78 | 38% | 2% | 163 |
| 4 | METAL GATE | Author keyword | 69 | 36% | 2% | 152 |
| 5 | HIGH K GATE DIELECTRICS | Author keyword | 55 | 56% | 1% | 66 |
| 6 | HAFNIUM OXIDE | Author keyword | 52 | 36% | 1% | 116 |
| 7 | HAFNIUM COMPOUNDS | Author keyword | 50 | 39% | 1% | 100 |
| 8 | HIGH K DIELECTRIC | Author keyword | 49 | 34% | 2% | 118 |
| 9 | METAL INSULATOR METAL MIM CAPACITOR | Author keyword | 48 | 74% | 0% | 35 |
| 10 | HAFNIUM SILICATE | Author keyword | 39 | 65% | 0% | 37 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | HFO2 | 147 | 40% | 4% | 290 | Search HFO2 | Search HFO2 |
| 2 | HIGH K | 126 | 35% | 4% | 295 | Search HIGH+K | Search HIGH+K |
| 3 | HIGH K DIELECTRICS | 78 | 38% | 2% | 163 | Search HIGH+K+DIELECTRICS | Search HIGH+K+DIELECTRICS |
| 4 | METAL GATE | 69 | 36% | 2% | 152 | Search METAL+GATE | Search METAL+GATE |
| 5 | HIGH K GATE DIELECTRICS | 55 | 56% | 1% | 66 | Search HIGH+K+GATE+DIELECTRICS | Search HIGH+K+GATE+DIELECTRICS |
| 6 | HAFNIUM OXIDE | 52 | 36% | 1% | 116 | Search HAFNIUM+OXIDE | Search HAFNIUM+OXIDE |
| 7 | HAFNIUM COMPOUNDS | 50 | 39% | 1% | 100 | Search HAFNIUM+COMPOUNDS | Search HAFNIUM+COMPOUNDS |
| 8 | HIGH K DIELECTRIC | 49 | 34% | 2% | 118 | Search HIGH+K+DIELECTRIC | Search HIGH+K+DIELECTRIC |
| 9 | METAL INSULATOR METAL MIM CAPACITOR | 48 | 74% | 0% | 35 | Search METAL+INSULATOR+METAL+MIM+CAPACITOR | Search METAL+INSULATOR+METAL+MIM+CAPACITOR |
| 10 | HAFNIUM SILICATE | 39 | 65% | 0% | 37 | Search HAFNIUM+SILICATE | Search HAFNIUM+SILICATE |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | GATE DIELECTRICS | 577 | 43% | 13% | 1030 |
| 2 | HFO2 | 245 | 41% | 6% | 466 |
| 3 | TA2O5 FILMS | 159 | 71% | 2% | 127 |
| 4 | HAFNIUM OXIDE | 147 | 59% | 2% | 167 |
| 5 | MIM CAPACITORS | 123 | 77% | 1% | 85 |
| 6 | TANTALUM OXIDE FILMS | 99 | 78% | 1% | 65 |
| 7 | HFO2 FILMS | 90 | 60% | 1% | 98 |
| 8 | DIELECTRICS | 82 | 13% | 8% | 597 |
| 9 | TA2O5 THIN FILMS | 79 | 62% | 1% | 81 |
| 10 | HAFNIUM | 79 | 23% | 4% | 296 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| High-K materials and metal gates for CMOS applications | 2015 | 6 | 283 | 67% |
| High dielectric constant gate oxides for metal oxide Si transistors | 2006 | 819 | 210 | 82% |
| High-kappa gate dielectrics: Current status and materials properties considerations | 2001 | 3972 | 93 | 55% |
| Development of hafnium based high-k materials-A review | 2011 | 109 | 270 | 60% |
| High dielectric constant oxides | 2004 | 555 | 129 | 80% |
| Crystalline Oxides on Silicon | 2010 | 75 | 123 | 60% |
| Growth, dielectric properties, and memory device applications of ZrO2 thin films | 2013 | 32 | 141 | 47% |
| Advanced high-kappa dielectric stacks with polySi and metal gates: Recent progress and current challenges | 2006 | 160 | 80 | 74% |
| Integrations and challenges of novel high-k gate stacks in advanced CMOS technology | 2011 | 40 | 345 | 67% |
| Review on high-k dielectrics reliability issues | 2005 | 267 | 15 | 47% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | SILICON NANO DEVICE | 28 | 29% | 1.1% | 83 |
| 2 | EXPT PHYS TECHNOL | 24 | 44% | 0.5% | 40 |
| 3 | LONDON NANOTECHNOL ELECT ELECT ENGN | 20 | 100% | 0.1% | 9 |
| 4 | ADV PROC DEV TEAM | 17 | 68% | 0.2% | 15 |
| 5 | MIRAI ASET | 17 | 100% | 0.1% | 8 |
| 6 | TEL TECHNOL | 13 | 67% | 0.2% | 12 |
| 7 | ENERGY EFFICIENT SUSTAINABLE SEMICOND GRP | 9 | 41% | 0.2% | 17 |
| 8 | ANHUI NANOMAT NANOSTRUCT | 9 | 19% | 0.6% | 44 |
| 9 | SEMICOND EQUIPMENT SYST | 8 | 70% | 0.1% | 7 |
| 10 | RADIAT DETECT MAT DEVICES | 8 | 60% | 0.1% | 9 |
Related classes at same level (level 2) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000034269 | ATOMIC LAYER DEPOSITION//CHEMICAL VAPOR DEPOSITION//MOLECULAR LAYER DEPOSITION MLD |
| 2 | 0.0000019810 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
| 3 | 0.0000014287 | ZIRCONIA//ZRO2//TZP |
| 4 | 0.0000013200 | PHOTORESIST REMOVAL//WET OZONE//HYDROGEN TERMINATION |
| 5 | 0.0000011861 | RESISTIVE SWITCHING//RESISTIVE RANDOM ACCESS MEMORY RRAM//MEMRISTOR |
| 6 | 0.0000011227 | INTERFACIAL SILICON EMISSION//SILICON OXIDATION//GENIE URBAIN ENVIRONM |
| 7 | 0.0000010818 | SIGE//GERMANIUM//STRAINED SI |
| 8 | 0.0000010310 | GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE |
| 9 | 0.0000008891 | INTEGRATED FERROELECTRICS//FERROELECTRIC THIN FILMS//PZT |
| 10 | 0.0000007993 | EPITAXIAL AL2O3//METAL INSULATOR HETEROSTRUCTURE//ALKALI HALIDES |