Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 1948 | 5188 | 27.2 | 79% |
Classes in level above (level 3) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 470 | 21855 | RESISTIVE SWITCHING//CHALCOGENIDE GLASSES//RESISTIVE RANDOM ACCESS MEMORY RRAM |
Classes in level below (level 1) |
| ID, lev. below |
Publications | Label for level below |
|---|---|---|
| 179 | 3953 | RESISTIVE SWITCHING//RESISTIVE RANDOM ACCESS MEMORY RRAM//MEMRISTOR |
| 7929 | 1235 | ORGANIC MEMORY//ELECTRICAL BISTABILITY//POLYMER MEMORY |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | RESISTIVE SWITCHING | Author keyword | 811 | 79% | 10% | 522 |
| 2 | RESISTIVE RANDOM ACCESS MEMORY RRAM | Author keyword | 311 | 92% | 2% | 121 |
| 3 | MEMRISTOR | Author keyword | 245 | 52% | 6% | 329 |
| 4 | RRAM | Author keyword | 174 | 61% | 4% | 184 |
| 5 | RESISTANCE SWITCHING | Author keyword | 112 | 67% | 2% | 102 |
| 6 | RERAM | Author keyword | 105 | 63% | 2% | 104 |
| 7 | RESISTIVE SWITCHING RS | Author keyword | 99 | 97% | 1% | 29 |
| 8 | ORGANIC MEMORY | Author keyword | 98 | 79% | 1% | 62 |
| 9 | RESISTIVE RANDOM ACCESS MEMORY | Author keyword | 96 | 86% | 1% | 49 |
| 10 | RESISTIVE MEMORY | Author keyword | 92 | 76% | 1% | 64 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | RESISTIVE SWITCHING | 811 | 79% | 10% | 522 | Search RESISTIVE+SWITCHING | Search RESISTIVE+SWITCHING |
| 2 | RESISTIVE RANDOM ACCESS MEMORY RRAM | 311 | 92% | 2% | 121 | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RRAM | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RRAM |
| 3 | MEMRISTOR | 245 | 52% | 6% | 329 | Search MEMRISTOR | Search MEMRISTOR |
| 4 | RRAM | 174 | 61% | 4% | 184 | Search RRAM | Search RRAM |
| 5 | RESISTANCE SWITCHING | 112 | 67% | 2% | 102 | Search RESISTANCE+SWITCHING | Search RESISTANCE+SWITCHING |
| 6 | RERAM | 105 | 63% | 2% | 104 | Search RERAM | Search RERAM |
| 7 | RESISTIVE SWITCHING RS | 99 | 97% | 1% | 29 | Search RESISTIVE+SWITCHING+RS | Search RESISTIVE+SWITCHING+RS |
| 8 | ORGANIC MEMORY | 98 | 79% | 1% | 62 | Search ORGANIC+MEMORY | Search ORGANIC+MEMORY |
| 9 | RESISTIVE RANDOM ACCESS MEMORY | 96 | 86% | 1% | 49 | Search RESISTIVE+RANDOM+ACCESS+MEMORY | Search RESISTIVE+RANDOM+ACCESS+MEMORY |
| 10 | RESISTIVE MEMORY | 92 | 76% | 1% | 64 | Search RESISTIVE+MEMORY | Search RESISTIVE+MEMORY |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | RRAM | 437 | 87% | 4% | 212 |
| 2 | NON VOLATILE MEMORY | 266 | 51% | 7% | 377 |
| 3 | RERAM | 171 | 95% | 1% | 57 |
| 4 | RESISTIVE SWITCHING MEMORIES | 162 | 70% | 3% | 133 |
| 5 | ELECTRICAL BISTABILITY | 152 | 78% | 2% | 101 |
| 6 | MEMRISTOR | 113 | 50% | 3% | 164 |
| 7 | MANY TIMES MEMORY | 102 | 100% | 1% | 30 |
| 8 | RESISTIVE MEMORY | 84 | 87% | 1% | 41 |
| 9 | ELECTROLYTE BASED RERAM | 82 | 92% | 1% | 33 |
| 10 | RESISTIVE SWITCHING MEMORY | 82 | 88% | 1% | 38 |
Journals |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | ADVANCED ELECTRONIC MATERIALS | 1 | 11% | 0% | 9 |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| Memristive devices for computing | 2013 | 317 | 125 | 84% |
| Recent progress in resistive random access memories: Materials, switching mechanisms, and performance | 2014 | 51 | 384 | 90% |
| Polymer-Based Resistive Memory Materials and Devices | 2014 | 47 | 139 | 94% |
| Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges | 2009 | 1369 | 115 | 57% |
| Polymeric charge storage electrets for non-volatile organic field effect transistor memory devices | 2015 | 5 | 37 | 84% |
| Nanoionics-based resistive switching memories | 2007 | 1806 | 54 | 63% |
| Resistive switching in transition metal oxides | 2008 | 1007 | 35 | 80% |
| Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials | 2015 | 4 | 47 | 57% |
| Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook | 2011 | 167 | 103 | 82% |
| Emerging memories: resistive switching mechanisms and current status | 2012 | 124 | 160 | 64% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | PETER GRUNBERG 7 | 35 | 81% | 0.4% | 21 |
| 2 | ELECT OPTOELECT | 30 | 53% | 0.8% | 40 |
| 3 | NANOFABRICAT NOVEL DEVICES INTEGRATED TECHN | 29 | 50% | 0.8% | 42 |
| 4 | NANOFABRICAT NOVEL DEVICE INTEGRAT | 26 | 64% | 0.5% | 25 |
| 5 | WERKSTOFFE ELEKTROTECH 2 | 22 | 42% | 0.8% | 40 |
| 6 | PL NANOION | 21 | 90% | 0.2% | 9 |
| 7 | NANOELECT TECHNOL | 18 | 83% | 0.2% | 10 |
| 8 | PROGRAM TERA BIT LEVEL NONVOLATILE MEMOR | 18 | 89% | 0.2% | 8 |
| 9 | THIN FILM NANO TECH | 17 | 79% | 0.2% | 11 |
| 10 | THIN FILM NANO TECHNOL | 15 | 88% | 0.1% | 7 |
Related classes at same level (level 2) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000011861 | HFO2//HIGH K//HIGH K DIELECTRICS |
| 2 | 0.0000009114 | MANGANITES//COLOSSAL MAGNETORESISTANCE//MANGANITE |
| 3 | 0.0000008438 | MATEMAT LICADA TECNOL INFORMAC//INTEGRAL ALGEBRAIC EQUATIONS//DIFFERENTIAL ALGEBRAIC EQUATION |
| 4 | 0.0000008099 | GE2SB2TE5//PHASE CHANGE MEMORY PCM//OPTICAL DISK |
| 5 | 0.0000007975 | POLYMER SOLAR CELLS//ORGANIC SOLAR CELLS//BULK HETEROJUNCTION |
| 6 | 0.0000006424 | NICKEL OXIDE//NIO//NIO THIN FILMS |
| 7 | 0.0000005901 | GLOBAL EXPONENTIAL STABILITY//CELLULAR NEURAL NETWORKS//COHEN GROSSBERG NEURAL NETWORKS |
| 8 | 0.0000005556 | SILICON NANOWIRES//QUANTUM DOT CELLULAR AUTOMATA QCA//QUANTUM DOT CELLULAR AUTOMATA |
| 9 | 0.0000005329 | FERROELECTRIC POLYMER//PVDF TRFE//FERROELECTRIC POLYMERS |
| 10 | 0.0000005148 | THIN FILM TRANSISTOR//THIN FILM TRANSISTORS TFTS//THIN FILM TRANSISTOR TFT |