Class information for:
Level 2: PHOTORESIST REMOVAL//WET OZONE//HYDROGEN TERMINATION

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
2900 2299 20.1 58%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 3)


ID, lev.
above		 Publications Label for level above
15 127408 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS

Classes in level below (level 1)


ID, lev. below Publications Label for level below
6060 1468 HYDROGEN TERMINATION//SHIZUOKA TORY//LAYER BY LAYER OXIDATION
22426 325 CLEANROOM//FAN FILTER UNIT//ORGANIC CONTAMINATION
24219 267 SPRAY ETCHING//ETCH FACTOR//ETCHING FACTOR
25232 239 WET OZONE//PHOTORESIST REMOVAL//RESIST REMOVAL

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 PHOTORESIST REMOVAL Author keyword 14 65% 1% 13
2 WET OZONE Author keyword 14 100% 0% 7
3 HYDROGEN TERMINATION Author keyword 11 28% 1% 33
4 SHIZUOKA TORY Address 11 100% 0% 6
5 LAYER BY LAYER OXIDATION Author keyword 11 69% 0% 9
6 CLEANROOM Author keyword 9 24% 1% 33
7 NATIVE OXIDE Author keyword 9 26% 1% 28
8 H TERMINATION Author keyword 8 46% 1% 13
9 ORGANIC CONTAMINATION Author keyword 6 23% 1% 23
10 NATIVE OXIDE GROWTH Author keyword 6 100% 0% 4

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 PHOTORESIST REMOVAL 14 65% 1% 13 Search PHOTORESIST+REMOVAL Search PHOTORESIST+REMOVAL
2 WET OZONE 14 100% 0% 7 Search WET+OZONE Search WET+OZONE
3 HYDROGEN TERMINATION 11 28% 1% 33 Search HYDROGEN+TERMINATION Search HYDROGEN+TERMINATION
4 LAYER BY LAYER OXIDATION 11 69% 0% 9 Search LAYER+BY+LAYER+OXIDATION Search LAYER+BY+LAYER+OXIDATION
5 CLEANROOM 9 24% 1% 33 Search CLEANROOM Search CLEANROOM
6 NATIVE OXIDE 9 26% 1% 28 Search NATIVE+OXIDE Search NATIVE+OXIDE
7 H TERMINATION 8 46% 1% 13 Search H+TERMINATION Search H+TERMINATION
8 ORGANIC CONTAMINATION 6 23% 1% 23 Search ORGANIC+CONTAMINATION Search ORGANIC+CONTAMINATION
9 NATIVE OXIDE GROWTH 6 100% 0% 4 Search NATIVE+OXIDE+GROWTH Search NATIVE+OXIDE+GROWTH
10 PREOXIDE 6 100% 0% 4 Search PREOXIDE Search PREOXIDE

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 HYDROGEN TERMINATION 151 55% 8% 190
2 HF TREATMENT 39 49% 3% 59
3 WAFER SURFACES 27 51% 2% 38
4 RESIST REMOVAL 23 100% 0% 10
5 ORGANIC CONTAMINATION 23 56% 1% 28
6 H TERMINATED SI111 22 68% 1% 19
7 LEAKAGE CURRENT DENSITY 21 90% 0% 9
8 NH4F 19 46% 1% 30
9 HEATED CATALYZER 17 72% 1% 13
10 MINIENVIRONMENT 15 88% 0% 7

Journals


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 MICRO 2 11% 1% 20

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Photoelectron spectroscopy studies of SiO2/Si interfaces 2007 56 103 33%
Non-Aqueous Cleaning Challenges for Preventing Damage to Fragile Nano-Structures: A Review 2014 2 18 33%
HYDROGEN ON SI - UBIQUITOUS SURFACE TERMINATION AFTER WET-CHEMICAL PROCESSING 1995 62 78 63%
Silicon dioxide sacrificial layer etching in surface micromachining 1997 61 28 50%
The picture tells the story: using surface morphology to probe chemical etching reactions 2001 22 27 48%
Functionalization of oxide-free silicon surfaces 2013 3 166 27%
Chemical structures of the SiO2/Si interface 1995 72 169 34%
WET CHEMICAL ETCHING OF SILICATE-GLASSES IN HYDROFLUORIC-ACID BASED SOLUTIONS 1993 135 41 29%
Development of an Environmentally Friendly Resist-Removal Process Using Wet Ozone 2012 0 24 79%
A REVIEW OF THE CHEMICAL-REACTION MECHANISM AND KINETICS FOR HYDROFLUORIC-ACID ETCHING OF SILICON DIOXIDE FOR SURFACE MICROMACHING APPLICATIONS 1993 75 32 41%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SHIZUOKA TORY 11 100% 0.3% 6
2 SYST SOLUT PLANNING 4 67% 0.2% 4
3 ABT SILIZIUMPHOTOVOLTAIK 4 75% 0.1% 3
4 DISPLAY TECHNOL DEV GRP 4 44% 0.3% 7
5 PHOTOENERGET ORGAN MAT 4 19% 0.8% 18
6 J AN SCI TECHNOL ORG 4 46% 0.3% 6
7 INTEGRATED TECHNOL SYST 3 20% 0.6% 13
8 LIQUID CRYSTAL DISPLAY GRP 2 67% 0.1% 2
9 T PJT MEMORY DEVICE SOLUT NETWORK 2 67% 0.1% 2
10 AIR CONDITIONING REFRIGERAT ENGN 2 19% 0.3% 8

Related classes at same level (level 2)


Rank Relatedness score Related classes
1 0.0000063006 INTERFACIAL SILICON EMISSION//SILICON OXIDATION//GENIE URBAIN ENVIRONM
2 0.0000030651 SCANNING TUNNELING MICROSCOPY//ATOM WI LAYERS//VICINAL SINGLE CRYSTAL SURFACES
3 0.0000020176 AC SURFACE PHOTOVOLTAGE//ELECTRON WORK FUNCTION//SUPERCONDUCTIVITY MECHANISM
4 0.0000015976 CHEMICAL MECHANICAL POLISHING//CHEMICAL MECHANICAL PLANARIZATION//CMP
5 0.0000015631 POROUS SILICON//SILICON NANOCRYSTALS//SI NANOCRYSTALS
6 0.0000013200 HFO2//HIGH K//HIGH K DIELECTRICS
7 0.0000013156 SELF ASSEMBLED MONOLAYERS//SELF ASSEMBLED MONOLAYER//DIP PEN NANOLITHOGRAPHY
8 0.0000012827 SIGE//GERMANIUM//STRAINED SI
9 0.0000012499 ELECT DEVICES MAT TECHNOL//PLASMA ETCHING//SIO2 ETCHING
10 0.0000011225 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS