Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 3558 | 953 | 21.1 | 44% |
Classes in level above (level 3) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 87 | 77161 | SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//JOURNAL OF CRYSTAL GROWTH |
Classes in level below (level 1) |
| ID, lev. below | Publications | Label for level below |
|---|---|---|
| 21642 | 354 | AMORPHOUS III V SEMICONDUCTORS//GAAS1 XNX THIN FILMS//SUNAG |
| 26412 | 210 | NOVOSHAKHTINSK BRANCH//ELE OCHEM HYDROGEN ENERGY//IRON STEEL IND |
| 28367 | 170 | BULK AMORPHOUS SEMICONDUCTORS//PHASE TRANSITION WAVE//ALPHA A |
| 29356 | 154 | SPHERICAL CELLULOSE ADSORBENT//HYDROLYZED LIGNIN//GALLIUM DETERMINATION |
| 34697 | 65 | STUDIO PROC ELETTROD//AMORPHOUS ANTIMONY//MAT INGN CHIM GIULIO NATTA POLITECN |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | NOVOSHAKHTINSK BRANCH | Address | 4 | 67% | 0% | 4 |
| 2 | ELE OCHEM HYDROGEN ENERGY | Address | 3 | 50% | 1% | 5 |
| 3 | AMORPHOUS III V SEMICONDUCTORS | Author keyword | 3 | 100% | 0% | 3 |
| 4 | GAAS1 XNX THIN FILMS | Author keyword | 3 | 100% | 0% | 3 |
| 5 | STUDIO PROC ELETTROD | Address | 3 | 60% | 0% | 3 |
| 6 | SUNAG | Address | 2 | 44% | 0% | 4 |
| 7 | AMORPHOUS ANTIMONY | Author keyword | 2 | 67% | 0% | 2 |
| 8 | IRON STEEL IND | Address | 2 | 67% | 0% | 2 |
| 9 | LOW TEMPERATURE IMPLANTATION | Author keyword | 2 | 67% | 0% | 2 |
| 10 | MAT INGN CHIM GIULIO NATTA POLITECN | Address | 2 | 67% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | GASB1 XGE2X | 31 | 92% | 1% | 12 |
| 2 | GAAS1 XGE2X | 25 | 71% | 2% | 20 |
| 3 | AMORPHOUS GAAS | 14 | 60% | 2% | 15 |
| 4 | IMPLANTED GASB | 12 | 86% | 1% | 6 |
| 5 | AMORPHOUS III V | 8 | 100% | 1% | 5 |
| 6 | GASB SURFACE | 8 | 100% | 1% | 5 |
| 7 | ZN41SB59 | 8 | 100% | 1% | 5 |
| 8 | GAAS1 XGE2X ALLOYS | 4 | 67% | 0% | 4 |
| 9 | ANOMALOUS DEFECT STRUCTURE | 3 | 100% | 0% | 3 |
| 10 | GALLIUM ARSENIDE FILMS | 3 | 100% | 0% | 3 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| Role of entropy of fusion in phase transformation and self-diffusion | 2004 | 10 | 5 | 60% |
| Metallic materials for the hydrogen energy industry and main gas pipelines: complex physical problems of aging, embrittlement, and failure | 2008 | 8 | 16 | 56% |
| Nanostructured germanium prepared via ion beam modification | 2013 | 5 | 57 | 35% |
| PRESSURE-INDUCED AMORPHOUS PHASES | 1992 | 188 | 52 | 15% |
| Characteristics of hydride-like segregates of hydrogen at dislocations in palladium | 2001 | 7 | 13 | 23% |
| ENTROPY, DISORDER, MELTING | 1988 | 13 | 30 | 20% |
| AMORPHOUS-SEMICONDUCTORS SYNTHESIZED BY HIGH-PRESSURE QUENCHING | 1994 | 1 | 50 | 32% |
| EPITAXIAL CRYSTAL-GROWTH BY SPUTTER DEPOSITION - APPLICATIONS TO SEMICONDUCTORS .1. | 1983 | 42 | 45 | 36% |
| OPTICAL-PROPERTIES OF QUATERNARY SOLID-SOLUTIONS OF III-V-COMPOUNDS AT WAVELENGTHS OF LATTICE-VIBRATIONS AND PLASMA-OSCILLATIONS (REVIEW) | 1984 | 8 | 8 | 38% |
| EPITAXIAL CRYSTAL-GROWTH BY SPUTTER DEPOSITION - APPLICATIONS TO SEMICONDUCTORS .2. | 1984 | 5 | 45 | 36% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | NOVOSHAKHTINSK BRANCH | 4 | 67% | 0.4% | 4 |
| 2 | ELE OCHEM HYDROGEN ENERGY | 3 | 50% | 0.5% | 5 |
| 3 | STUDIO PROC ELETTROD | 3 | 60% | 0.3% | 3 |
| 4 | SUNAG | 2 | 44% | 0.4% | 4 |
| 5 | IRON STEEL IND | 2 | 67% | 0.2% | 2 |
| 6 | MAT INGN CHIM GIULIO NATTA POLITECN | 2 | 67% | 0.2% | 2 |
| 7 | CNR IMM MATIS | 1 | 21% | 0.6% | 6 |
| 8 | DIPARTIMENTO CHIM FIS PLICATA POLITECN | 1 | 100% | 0.2% | 2 |
| 9 | PHYSICOCHIM ANAL MAT | 1 | 100% | 0.2% | 2 |
| 10 | ARE QUIM | 1 | 50% | 0.1% | 1 |
Related classes at same level (level 2) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000012385 | GAINNAS//DILUTE NITRIDES//ANTIMONIDES |
| 2 | 0.0000011608 | BGAAS//REGIONAL DENSITY FUNCTIONAL THEORY//HIGH P SURE GRP |
| 3 | 0.0000009887 | GAAS ON SI//GAAS SI//GAINP |
| 4 | 0.0000009342 | MICROCRYSTALLINE SILICON//JOURNAL OF NON-CRYSTALLINE SOLIDS//PHOTOVOLTA THIN FILM ELECT |
| 5 | 0.0000008243 | JOURNAL OF SYNCHROTRON RADIATION//CONVERSION ELECTRON YIELD//ELNES |
| 6 | 0.0000007494 | SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT |
| 7 | 0.0000007089 | SURFACE AND INTERFACE ANALYSIS//AUGER PHOTOELECTRON COINCIDENCE SPECTROSCOPY APECS//IMFP |
| 8 | 0.0000007037 | GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE |
| 9 | 0.0000006993 | ION BEAM MIXING//RADIAT BEAM MAT ENGN//BALLISTIC MIXING |
| 10 | 0.0000005665 | EL2//NONIONIZING ENERGY LOSS NIEL//DX CENTERS |