Class information for:
Level 1: IEEE TRANSACTIONS ON NUCLEAR SCIENCE//TOTAL IONIZING DOSE//OXIDE TRAPPED CHARGE

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
2169 2334 21.0 58%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
474 2             FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI 15884
2169 1                   IEEE TRANSACTIONS ON NUCLEAR SCIENCE//TOTAL IONIZING DOSE//OXIDE TRAPPED CHARGE 2334

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 IEEE TRANSACTIONS ON NUCLEAR SCIENCE journal 792883 43% 6% 1001
2 TOTAL IONIZING DOSE authKW 443140 3% 47% 72
3 OXIDE TRAPPED CHARGE authKW 399783 2% 75% 41
4 ELDRS authKW 354872 1% 94% 29
5 TOTAL DOSE authKW 264842 2% 45% 45
6 TOTAL DOSE EFFECTS authKW 252710 1% 60% 32
7 TOTAL IONIZING DOSE TID authKW 232197 2% 49% 36
8 ENHANCED LOW DOSE RATE SENSITIVITY ELDRS authKW 223064 1% 95% 18
9 GAIN DEGRADATION authKW 218011 1% 83% 20
10 INTERFACE TRAPS authKW 198704 3% 23% 65

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Nuclear Science & Technology 66452 49% 0% 1151
2 Engineering, Electrical & Electronic 26221 61% 0% 1430
3 Physics, Applied 4472 30% 0% 693
4 Nanoscience & Nanotechnology 691 7% 0% 157
5 Physics, Condensed Matter 418 9% 0% 213
6 Physics, Nuclear 398 5% 0% 109
7 Instruments & Instrumentation 389 5% 0% 114
8 Materials Science, Coatings & Films 384 3% 0% 79
9 Physics, Multidisciplinary 183 6% 0% 136
10 Physics, Particles & Fields 73 3% 0% 66

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SPACE MISSION TECHNOL 34880 0% 67% 4
2 IBW RELIC 29431 0% 75% 3
3 ELECT ENGN NIKOLA TESLA 27246 0% 42% 5
4 1332 26162 0% 100% 2
5 IES UMR CNRS UM2 5214 26162 0% 100% 2
6 SPACE VEHICLES DIRECTORATE SE 26162 0% 100% 2
7 FIS DISPOSIT MICROELECT 23543 0% 60% 3
8 STATE INTENSE PULSED IRRADIAT SIMULAT E 23251 0% 44% 4
9 CEM2 20555 1% 10% 15
10 RREACT GRP 18841 0% 21% 7

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 IEEE TRANSACTIONS ON NUCLEAR SCIENCE 792883 43% 6% 1001
2 MICROELECTRONICS RELIABILITY 10239 3% 1% 74
3 SOLID-STATE ELECTRONICS 3371 2% 1% 51
4 MICROELECTRONIC ENGINEERING 3272 2% 1% 51
5 ACTA PHYSICA SINICA 2690 3% 0% 65
6 JOURNAL OF APPLIED PHYSICS 2599 6% 0% 151
7 APPLIED PHYSICS LETTERS 2066 6% 0% 138
8 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 1740 1% 1% 12
9 NUCLEAR TECHNOLOGY & RADIATION PROTECTION 1686 0% 2% 7
10 SOVIET MICROELECTRONICS 1563 0% 2% 6

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 TOTAL IONIZING DOSE 443140 3% 47% 72 Search TOTAL+IONIZING+DOSE Search TOTAL+IONIZING+DOSE
2 OXIDE TRAPPED CHARGE 399783 2% 75% 41 Search OXIDE+TRAPPED+CHARGE Search OXIDE+TRAPPED+CHARGE
3 ELDRS 354872 1% 94% 29 Search ELDRS Search ELDRS
4 TOTAL DOSE 264842 2% 45% 45 Search TOTAL+DOSE Search TOTAL+DOSE
5 TOTAL DOSE EFFECTS 252710 1% 60% 32 Search TOTAL+DOSE+EFFECTS Search TOTAL+DOSE+EFFECTS
6 TOTAL IONIZING DOSE TID 232197 2% 49% 36 Search TOTAL+IONIZING+DOSE+TID Search TOTAL+IONIZING+DOSE+TID
7 ENHANCED LOW DOSE RATE SENSITIVITY ELDRS 223064 1% 95% 18 Search ENHANCED+LOW+DOSE+RATE+SENSITIVITY+ELDRS Search ENHANCED+LOW+DOSE+RATE+SENSITIVITY+ELDRS
8 GAIN DEGRADATION 218011 1% 83% 20 Search GAIN+DEGRADATION Search GAIN+DEGRADATION
9 INTERFACE TRAPS 198704 3% 23% 65 Search INTERFACE+TRAPS Search INTERFACE+TRAPS
10 BIPOLAR JUNCTION TRANSISTOR 191262 2% 38% 39 Search BIPOLAR+JUNCTION+TRANSISTOR Search BIPOLAR+JUNCTION+TRANSISTOR

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 FLEETWOOD, DM , (2013) TOTAL IONIZING DOSE EFFECTS IN MOS AND LOW-DOSE-RATE-SENSITIVE LINEAR-BIPOLAR DEVICES.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 60. ISSUE 3. P. 1706-1730 152 88% 34
2 HUGHES, HL , BENEDETTO, JM , (2003) RADIATION EFFECTS AND HARDENING OF MOS TECHNOLOGY: DEVICES AND CIRCUITS.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 50. ISSUE 3. P. 500-521 218 75% 117
3 FLEETWOOD, DM , EISEN, HA , (2003) TOTAL-DOSE RADIATION HARDNESS ASSURANCE.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 50. ISSUE 3. P. 552-564 108 95% 38
4 OLDHAM, TR , MCLEAN, FB , (2003) TOTAL IONIZING DOSE EFFECTS IN MOS OXIDES AND DEVICES.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 50. ISSUE 3. P. 483 -499 89 89% 251
5 SCHWANK, JR , SHANEYFELT, MR , FLEETWOOD, DM , FELIX, JA , DODD, PE , PAILLET, P , FERLET-CAVROIS, V , (2008) RADIATION EFFECTS IN MOS OXIDES.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 55. ISSUE 4. P. 1833 -1853 78 72% 163
6 FLEETWOOD, DM , (2002) EFFECTS OF HYDROGEN TRANSPORT AND REACTIONS ON MICROELECTRONICS RADIATION RESPONSE AND RELIABILITY.MICROELECTRONICS RELIABILITY. VOL. 42. ISSUE 4-5. P. 523 -541 113 63% 60
7 PEASE, RL , (2003) TOTAL IONIZING DOSE EFFECTS IN BIPOLAR DEVICES AND CIRCUITS.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 50. ISSUE 3. P. 539-551 69 96% 50
8 FLEETWOOD, DM , SCHRIMPF, RD , PANTELIDES, ST , PEASE, RL , DUNHAM, GW , (2008) ELECTRON CAPTURE, HYDROGEN RELEASE, AND ENHANCED GAIN DEGRADATION IN LINEAR BIPOLAR DEVICES.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 55. ISSUE 6. P. 2986-2991 54 95% 17
9 SHANEYFELT, MR , SCHWANK, JR , DODD, PE , FELIX, JA , (2008) TOTAL IONIZING DOSE AND SINGLE EVENT EFFECTS HARDNESS ASSURANCE QUALIFICATION ISSUES FOR MICROELECTRONICS.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 55. ISSUE 4. P. 1926-1946 70 70% 13
10 PEASE, RL , SCHRIMPF, RD , FLEETWOOD, DM , (2009) ELDRS IN BIPOLAR LINEAR CIRCUITS: A REVIEW.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 56. ISSUE 4. P. 1894-1908 42 98% 51

Classes with closest relation at Level 1


Rank Class id link
1 19608 SI SIO2//GE INSULATOR STRUCTURE//MICROWAVE TRANSIENT PHOTOCONDUCTIVITY
2 21194 SINGLE EVENT BURNOUT SEB//SINGLE EVENT GATE RUPTURE SEGR//RREACT GRP
3 20228 RADFET//PMOS DOSIMETER//DEVICE PHYS MICROELECT
4 14880 SIGEHBT//A AMA MICROELECT SCI TECHNOL//MIXED MODE STRESS
5 14061 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//NBTI
6 2603 STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//SOFT BREAKDOWN
7 34788 CERIUM MAGNETOPLUMBITE//EDS SPECTRA//ENAMEL INSERT RESTORATION
8 12205 DISPLACEMENT DAMAGE//NONIONIZING ENERGY LOSS//DISPLACEMENT DAMAGE DOSE
9 4469 HOT CARRIERS//HOT CARRIER DEGRADATION//CHARGE PUMPING
10 738 SOFT ERROR//SINGLE EVENT UPSET//SINGLE EVENT TRANSIENT

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