Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 25406 | 282 | 17.8 | 48% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
| 6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
| 474 | 2 | FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI | 15884 |
| 25406 | 1 | MSOS O P STRUCTURE//SI2H6 GAS//SEMI INSULATING POLYCRYSTALLINE SILICON | 282 |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | MSOS O P STRUCTURE | authKW | 216562 | 1% | 100% | 2 |
| 2 | SI2H6 GAS | authKW | 216562 | 1% | 100% | 2 |
| 3 | SEMI INSULATING POLYCRYSTALLINE SILICON | authKW | 194904 | 1% | 60% | 3 |
| 4 | N2O GAS | authKW | 139215 | 1% | 43% | 3 |
| 5 | AL SILICON RICH OXIDE SI | authKW | 108281 | 0% | 100% | 1 |
| 6 | BETA CHLOROETHYLSILSESQUIOXANE | authKW | 108281 | 0% | 100% | 1 |
| 7 | BETA CHLOROETHYLTRICHLOROSILANE | authKW | 108281 | 0% | 100% | 1 |
| 8 | CARRIER TRANSPORTATION MECHANISM | authKW | 108281 | 0% | 100% | 1 |
| 9 | CCMOGRP MICROELECT VISUALISAT | address | 108281 | 0% | 100% | 1 |
| 10 | CDPCNRS URA 250 DMO | address | 108281 | 0% | 100% | 1 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Materials Science, Coatings & Films | 3502 | 26% | 0% | 72 |
| 2 | Physics, Applied | 3441 | 70% | 0% | 196 |
| 3 | Physics, Condensed Matter | 786 | 29% | 0% | 81 |
| 4 | Materials Science, Multidisciplinary | 236 | 23% | 0% | 64 |
| 5 | Engineering, Electrical & Electronic | 222 | 18% | 0% | 52 |
| 6 | Electrochemistry | 150 | 7% | 0% | 19 |
| 7 | Chemistry, Physical | 43 | 11% | 0% | 32 |
| 8 | Nanoscience & Nanotechnology | 40 | 5% | 0% | 14 |
| 9 | Materials Science, Ceramics | 32 | 2% | 0% | 7 |
| 10 | Instruments & Instrumentation | 11 | 3% | 0% | 8 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | CCMOGRP MICROELECT VISUALISAT | 108281 | 0% | 100% | 1 |
| 2 | CDPCNRS URA 250 DMO | 108281 | 0% | 100% | 1 |
| 3 | CFM M5 OPERAT | 108281 | 0% | 100% | 1 |
| 4 | CNET CNS MEYLAN | 108281 | 0% | 100% | 1 |
| 5 | GRP MICROELE ON VISUALIZAT | 108281 | 0% | 100% | 1 |
| 6 | IC FAILURE ANAL RE IL | 108281 | 0% | 100% | 1 |
| 7 | PHYS D | 108281 | 0% | 100% | 1 |
| 8 | SEMICOND TECHNOL PL STAR GRP | 108281 | 0% | 100% | 1 |
| 9 | CNRSURA 1648 | 54140 | 0% | 50% | 1 |
| 10 | MODELING CONCEPT CIRCUITS ELECT | 54140 | 0% | 50% | 1 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | ELECTRON DEVICE LETTERS | 3232 | 1% | 1% | 3 |
| 2 | APPLIED SURFACE SCIENCE | 2398 | 10% | 0% | 28 |
| 3 | JOURNAL OF APPLIED PHYSICS | 1684 | 15% | 0% | 41 |
| 4 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1284 | 4% | 0% | 12 |
| 5 | THIN SOLID FILMS | 1172 | 7% | 0% | 20 |
| 6 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1147 | 6% | 0% | 18 |
| 7 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 847 | 4% | 0% | 11 |
| 8 | SOLID-STATE ELECTRONICS | 691 | 3% | 0% | 8 |
| 9 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 520 | 1% | 0% | 4 |
| 10 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 487 | 4% | 0% | 12 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | GONZALEZ, P , FERNANDEZ, D , POU, J , GARCIA, E , SERRA, J , LEON, B , PEREZAMOR, M , (1992) PHOTOINDUCED CHEMICAL VAPOR-DEPOSITION OF SILICON-OXIDE THIN-FILMS.THIN SOLID FILMS. VOL. 218. ISSUE 1-2. P. 170-181 | 29 | 55% | 18 |
| 2 | ACEVES, M , FALCONY, C , REYNOSO, JA , CALLEJA, W , PEREZ, R , (1999) NEW EXPERIMENTAL OBSERVATIONS ON THE ELECTRICAL CHARACTERISTICS OF THE AL/SRO/SI DIODE, AND ANNEALING EFFECTS.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 2. ISSUE 2. P. 173-183 | 13 | 87% | 4 |
| 3 | LOMBARDO, S , CAMPISANO, SU , (1996) ELECTRICAL AND OPTICAL PROPERTIES OF SEMI-INSULATING POLYCRYSTALLINE SILICON THIN FILMS: THE ROLE OF MICROSTRUCTURE AND DOPING.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 17. ISSUE 8. P. 281-336 | 25 | 45% | 21 |
| 4 | FERREIRA, ES , MORIMOTO, NI , (2001) LOW-PRESSURE CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) AND ITS ANALYSIS: APPLICATION TO POWER DIODE PASSIVATION.POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS. VOL. 80-81. ISSUE . P. 391-396 | 8 | 100% | 0 |
| 5 | SHEI, SC , SU, YK , HWANG, CJ , YOKOYAMA, M , PAN, FM , (1995) COMPOSITIONAL AND ELECTRICAL-PROPERTIES OF SI METAL-OXIDE-SEMICONDUCTOR STRUCTURE PREPARED BY DIRECT PHOTOENHANCED CHEMICAL-VAPOR-DEPOSITION USING A DEUTERIUM LAMP.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 13. ISSUE 2. P. 237-243 | 16 | 59% | 0 |
| 6 | YU, Z , ACEVES, M , CARRILLO, J , (2006) OPTICAL SENSITIVITY OF AL/SRO/SI MOS DIODES.REVISTA MEXICANA DE FISICA. VOL. 52. ISSUE 2. P. 54-56 | 8 | 80% | 0 |
| 7 | DA SILVA ZAMBOM, L , LANTIN, DG , ONODA, E , VERDONCK, P , (2004) NON-STOICHIOMETRIC SILICON OXIDE DEPOSITED AT LOW GASEOUS N2O/SIH4 RATIOS.THIN SOLID FILMS. VOL. 459. ISSUE 1-2. P. 220-223 | 6 | 100% | 1 |
| 8 | COMITA, PB , FARKAS, J , YANG, B , CHUANG, YH , OCONNOR, C , LIU, KC , COHEN, MG , (1995) PULSED ULTRAVIOLET-LASER DEPOSITION OF SIO2-FILMS AT 248 NM.APPLIED PHYSICS LETTERS. VOL. 66. ISSUE 12. P. 1463-1465 | 8 | 100% | 7 |
| 9 | ACEVES, M , PEDRAZA, J , REYNOSO-HERNANDEZ, JA , FALCONY, C , CALLEJA, W , (1999) STUDY ON THE AL/SILICON RICH OXIDE/SI STRUCTURE AS A SURGE SUPPRESSOR, DC, FREQUENCY RESPONSE AND MODELING.MICROELECTRONICS JOURNAL. VOL. 30. ISSUE 9. P. 855 -862 | 9 | 75% | 4 |
| 10 | BRUNSON, KM , SANDS, D , THOMAS, CB , JEYNES, C , WATTS, JF , (1990) COMPOSITION AND STRUCTURE OF SEMI-INSULATING POLYCRYSTALLINE SILICON THIN-FILMS.PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES. VOL. 61. ISSUE 3. P. 361 -376 | 13 | 72% | 14 |
Classes with closest relation at Level 1 |