Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
| 64 | 3 | SEMICONDUCTOR LASERS//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 89567 |
| 26 | 2 | SUPERLATTICES AND MICROSTRUCTURES//QUANTUM WELLS//PHYSICS, CONDENSED MATTER | 34827 |
| 23383 | 1 | REAL SPACE TRANSFER//CHARGE INJECTION TRANSISTOR//HOT ELECTRON LASER | 370 |
Terms with highest relevance score |
| rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|---|
| 1 | REAL SPACE TRANSFER | authKW | 532366 | 3% | 63% | 10 |
| 2 | CHARGE INJECTION TRANSISTOR | authKW | 170360 | 1% | 100% | 2 |
| 3 | HOT ELECTRON LASER | authKW | 170360 | 1% | 100% | 2 |
| 4 | LONGITUDINAL TRANSPORT | authKW | 170360 | 1% | 100% | 2 |
| 5 | REAL SPACE TRANSFER RST | authKW | 113572 | 1% | 67% | 2 |
| 6 | AMSRL EP EF | address | 85180 | 0% | 100% | 1 |
| 7 | BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR BUNDR | authKW | 85180 | 0% | 100% | 1 |
| 8 | BULK BARRIER TRANSISTOR | authKW | 85180 | 0% | 100% | 1 |
| 9 | COORDINATED SCI ELECT ENGN | address | 85180 | 0% | 100% | 1 |
| 10 | DELTA DOPED DELTA DOPED | authKW | 85180 | 0% | 100% | 1 |
Web of Science journal categories |
| chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | Physics, Applied | 2212 | 50% | 0% | 184 |
| 2 | Physics, Condensed Matter | 2061 | 39% | 0% | 146 |
| 3 | Engineering, Electrical & Electronic | 1128 | 34% | 0% | 124 |
| 4 | Materials Science, Multidisciplinary | 69 | 13% | 0% | 48 |
| 5 | Nanoscience & Nanotechnology | 61 | 5% | 0% | 20 |
| 6 | Physics, Multidisciplinary | 50 | 7% | 0% | 26 |
| 7 | Optics | 24 | 5% | 0% | 18 |
| 8 | Telecommunications | 11 | 2% | 0% | 8 |
| 9 | Crystallography | 2 | 1% | 0% | 5 |
| 10 | Acoustics | -0 | 0% | 0% | 1 |
Address terms |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | AMSRL EP EF | 85180 | 0% | 100% | 1 |
| 2 | COORDINATED SCI ELECT ENGN | 85180 | 0% | 100% | 1 |
| 3 | ELE POWER SOURCES DIRECTORATEMS | 85180 | 0% | 100% | 1 |
| 4 | ELECT COMP ENGN COMP ELE GRP | 85180 | 0% | 100% | 1 |
| 5 | ELECT ENGN COORDINATED SCI | 85180 | 0% | 100% | 1 |
| 6 | EPSD AMSRLEPEF | 85180 | 0% | 100% | 1 |
| 7 | HIGH FREQUENCY DEVICES IC GRP | 85180 | 0% | 100% | 1 |
| 8 | NIZHNI NOVGOROD PHYSICOTECH UNIV | 85180 | 0% | 100% | 1 |
| 9 | PHYS MICROSTRU | 85180 | 0% | 100% | 1 |
| 10 | STATE MECH PHYS | 85180 | 0% | 100% | 1 |
Journals |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | SOLID-STATE ELECTRONICS | 6198 | 7% | 0% | 27 |
| 2 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 5033 | 6% | 0% | 22 |
| 3 | IEE PROCEEDINGS-OPTOELECTRONICS | 3701 | 2% | 1% | 6 |
| 4 | SEMICONDUCTORS | 3523 | 5% | 0% | 17 |
| 5 | IEEE ELECTRON DEVICE LETTERS | 2948 | 5% | 0% | 18 |
| 6 | SUPERLATTICES AND MICROSTRUCTURES | 2161 | 4% | 0% | 13 |
| 7 | MICROWAVES | 1979 | 0% | 2% | 1 |
| 8 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 1932 | 5% | 0% | 19 |
| 9 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 1832 | 3% | 0% | 11 |
| 10 | APPLIED PHYSICS LETTERS | 1715 | 13% | 0% | 48 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |