Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
| 215 | 3 | JOURNAL OF CRYSTAL GROWTH//HGCDTE//SOVIET PHYSICS SEMICONDUCTORS-USSR | 51359 |
| 3960 | 2 | PIEZOOPTIC EFFECT//UKRAINIAN JOURNAL OF PHYSICAL OPTICS//MICROSCOPE | 849 |
| 25269 | 1 | OPTIMIZATION OF ANNEALING//SILICON MICROCAVITY//DECREASING OF DEPTH OF P N JUNCTIONS | 309 |
Terms with highest relevance score |
| rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|---|
| 1 | OPTIMIZATION OF ANNEALING | authKW | 509978 | 2% | 100% | 5 |
| 2 | SILICON MICROCAVITY | authKW | 407983 | 1% | 100% | 4 |
| 3 | DECREASING OF DEPTH OF P N JUNCTIONS | authKW | 305987 | 1% | 100% | 3 |
| 4 | ERBIUM RELATED CENTRES | authKW | 305987 | 1% | 100% | 3 |
| 5 | NGO PHYS SUN | address | 305987 | 1% | 100% | 3 |
| 6 | OPTIMIZATION OF TECHNOLOGICAL PROCESS | authKW | 305987 | 1% | 100% | 3 |
| 7 | SELF ASSEMBLED SILICON QUANTUM WELLS | authKW | 229489 | 1% | 75% | 3 |
| 8 | ARBEITSGRP EPR | address | 203991 | 1% | 100% | 2 |
| 9 | DECREASING OF MECHANICAL STRESS | authKW | 203991 | 1% | 100% | 2 |
| 10 | ULTRA SHALLOW DIFFUSION PROFILE | authKW | 203991 | 1% | 100% | 2 |
Web of Science journal categories |
| chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | Physics, Condensed Matter | 3959 | 59% | 0% | 181 |
| 2 | Physics, Multidisciplinary | 343 | 17% | 0% | 51 |
| 3 | Physics, Applied | 275 | 21% | 0% | 66 |
| 4 | Materials Science, Multidisciplinary | 49 | 12% | 0% | 38 |
| 5 | Spectroscopy | 44 | 4% | 0% | 12 |
| 6 | Nanoscience & Nanotechnology | 32 | 5% | 0% | 14 |
| 7 | Physics, Mathematical | 25 | 3% | 0% | 10 |
| 8 | Optics | 7 | 4% | 0% | 11 |
| 9 | Engineering, Electrical & Electronic | -0 | 3% | 0% | 9 |
| 10 | Metallurgy & Metallurgical Engineering | -0 | 1% | 0% | 3 |
Address terms |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | NGO PHYS SUN | 305987 | 1% | 100% | 3 |
| 2 | ARBEITSGRP EPR | 203991 | 1% | 100% | 2 |
| 3 | NIZHNY NOVGOROD | 114741 | 1% | 38% | 3 |
| 4 | AO IOFFE PHYS TECH | 101996 | 0% | 100% | 1 |
| 5 | IOFFE PHYSICALTECH | 101996 | 0% | 100% | 1 |
| 6 | VOLGO COOPERAT BRANCH | 101996 | 0% | 100% | 1 |
| 7 | CEF SEMICOND | 50997 | 0% | 50% | 1 |
| 8 | PHYS MICROSTRUCTU | 16998 | 0% | 17% | 1 |
| 9 | NTK SINGLE CRYSTALS | 12748 | 0% | 13% | 1 |
| 10 | AF IOFFE PHYSICOTECH | 9789 | 7% | 0% | 23 |
Journals |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | SEMICONDUCTORS | 33854 | 16% | 1% | 48 |
| 2 | FIZIKA TVERDOGO TELA | 7823 | 9% | 0% | 29 |
| 3 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 6583 | 6% | 0% | 19 |
| 4 | IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA | 4622 | 5% | 0% | 15 |
| 5 | JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE | 4601 | 4% | 0% | 12 |
| 6 | NANO | 2798 | 2% | 1% | 5 |
| 7 | IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK | 2215 | 0% | 2% | 1 |
| 8 | DEFECT AND DIFFUSION FORUM SERIES | 2132 | 1% | 1% | 2 |
| 9 | PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 1933 | 1% | 0% | 4 |
| 10 | ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI | 1606 | 3% | 0% | 10 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |