{"id":11,"date":"2014-10-17T12:42:23","date_gmt":"2014-10-17T10:42:23","guid":{"rendered":"http:\/\/www.kth.se\/blogs\/hotsic\/?page_id=11"},"modified":"2017-09-19T04:08:32","modified_gmt":"2017-09-19T02:08:32","slug":"publications","status":"publish","type":"page","link":"https:\/\/www.kth.se\/blogs\/hotsic\/publications\/","title":{"rendered":"Publications"},"content":{"rendered":"

Recent publications<\/h2>\n

500 \u00b0C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits<\/a>
\nElahipanah, H., Kargarrazi, S., Salemi, A., \u00d6stling, M., and Zetterling, C.-M., IEEE Electron Device Letters, vol. 38, 2017. <\/p>\n

SiC BJT Compact DC Model With Continuous- Temperature Scalability From 300 to 773 K<\/a>
\nTian, Y., Hedayati, R., and Zetterling, C.-M., IEEE Trans. Electron Devices, vol. 64, p. 3588, 2017.<\/p>\n

A Fully Integrated Silicon-Carbide Sigma\u2013Delta Modulator Operating up to 500 \u00b0C<\/a>
\nTian, Y. and Zetterling, C.-M., IEEE Trans. Electron Devices, vol. 64, p. 2782, 2017.<\/p>\n

High Temperature Bipolar Master-Slave Comparator and Frequency Divider in 4H-SiC Technology<\/a>
\nHedayati, R., Lanni, L., Shakir, M., Salemi, A., and Zetterling, C.-M., Materials Science Forum, 897, p. 681, 2017.<\/p>\n

Total Dose Effects on 4H-SiC Bipolar Junction Transistors<\/a>
\nSuvanam, S.S., Lanni, L., Malm, B.G., Zetterling, C.-M., and Hall\u00e9n, A., Materials Science Forum, 897, p. 579, 2017.<\/p>\n

High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits<\/a>
\nSuvanam, S.S., Kuroki, S.I., Lanni, L., Hedayati, R., Ohshima, T., Makino, T., Hall\u00e9n, A., and Zetterling, C.-M., IEEE Transactions on Nuclear Science, vol. 64, p. 852, 2017<\/p>\n

Bipolar integrated circuits in SiC for extreme environment operation<\/a>
\nZetterling, C.-M., Hallen, A., Hedayati, R., Kargarrazi, S., Lanni, L., Malm, B.G., Mardani, S., Norstrom, H., Rusu, A., Suvanam, S.S., Tian, Y., and \u00d6stling, M., Semiconductor Science and Technology, vol. 32, p. 034002, 2017.<\/p>\n

Material Aspects of Wide Temperature Range Amplifier Design in SiC Bipolar Technologies<\/a>
\nHedayati, R. and Zetterling, C.-M., Journal of Materials Research, vol. 31, p. 2928, 2016.<\/p>\n

A 500 \u00b0C 8-b Digital-to-Analog Converter in Silicon Carbide Bipolar Technology<\/a>
\nHedayati, R., Lanni, L., Malm, B.G., Rusu, A., and Zetterling, C.-M., IEEE Trans. Electron Devices, vol. 63, p. 3445, 2016.<\/p>\n

Silicon Carbide Fully Differential Amplifier Characterized Up to 500 \u00b0C<\/a>
\nTian, Y., Lanni, L., Rusu, A., and Zetterling, C.-M.
\nIEEE Transactions on Electron Devices, vol 63(6), pp. 2242 – 2247, 2016.<\/p>\n

Wide Temperature Range Integrated Bandgap Voltage References in 4H\u2013SiC<\/a>
\nHedayati, R., Lanni, L., Rusu, A., and Zetterling, C.-M.
\nIEEE Electron Device Letters, vol. 37, p. 146, 2016.<\/p>\n

A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier<\/a>
\nKargarrazi, S., Lanni, L., and Zetterling, C.-M.
\nSolid-State Electronics, vol. 116, p. 33, 2016.<\/p>\n

500 \u00b0C Bipolar SiC Linear Voltage Regulator<\/a>
\nKargarrazi, S., Lanni, L., Saggini, S., Rusu, A., and Zetterling, C.-M.
\nIEEE Transactions on Electron Devices, vol 62(6), pp. 1953 – 1957, 2015.<\/p>\n

Integrated circuits in silicon carbide for high-temperature applications<\/a>
\nZetterling, C.-M.
\nMRS Bulletin, vol 40(5), pp. 431 – 438, 2015.<\/p>\n

Influence of Passivation Oxide Thickness and Device Layout on the Current Gain of SiC BJTs<\/a>
\nLanni, L., Malm, B. G., \u00d6stling, M., and Zetterling, C.-M.
\nIEEE Electron Device Letters, vol 36(1), pp. 11 – 13, 2015.<\/p>\n

Turning to history for high-temperature integrated circuits<\/a> (87 MB, entire issue)
\nZetterling, C.-M. and Lanni, L.
\nCompound Semiconductor, vol 21(1), pp. 50-54, 2015.<\/p>\n

Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates<\/a>
\nSuvanam, S.S., Lanni, L., Malm, B.G., Zetterling, C.-M., and Hallen, A.
\nIEEE Transactions on Nuclear Science, vol. 61, p. 1772, 2014.<\/p>\n

A Monolithic, 500 \u00b0C Operational Amplifier in 4H-SiC Bipolar Technology<\/a>
\nHedayati, R., Lanni, L., Rodriguez, S., Malm, B.G., Rusu, A., Zetterling, C.-M.
\nIEEE Electron Device Letters, vol 35(7), pp. 693 – 695, 2014.<\/p>\n

Lateral p-n-p Transistors and Complementary SiC Bipolar Technology<\/a>
\nLanni, L., Malm, B.G., \u00d6stling, M., Zetterling, C.-M.
\nIEEE Electron Device Letters, vol 35(4), pp. 428 – 430, 2014.<\/p>\n

A 4H-SiC Bipolar Technology for High-temperature Integrated Circuits<\/a>
\nLanni, L., Malm, B. G., Zetterling, C.-M., and \u00d6stling, M.
\nJ. Microelectronics and Electronic Packaging, vol. 10(4), pp. 155 – 162, 2013.<\/p>\n

500 \u00b0C Bipolar Integrated OR\/NOR Gate in 4H-SiC<\/a>
\nLanni, L., Malm, B.G., \u00d6stling, M., Zetterling, C.-M.
\nIEEE Electron Device Letters, vol 34(9), pp. 1091 – 1093, 2013.<\/p>\n

Silicon Carbide High Temperature Electronics \u2013 Is This Rocket Science?<\/a>
\nZetterling, C.-M.
\nFuture Trends in Microelectronics: Frontiers and Innovations, ch. 7, p. 102
\nEdited by Luiryi, S., Xu, J. and Zaslavsky, A., John Wiley & Sons, 2013.<\/p>\n

Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC<\/a>
\nLanni, L., Ghandi, R., Malm, B.G., Zetterling, C.-M., \u00d6stling, M.
\nIEEE Transactions on Electron Devices, vol 59(4), pp. 1076 – 1083, 2012.<\/p>\n

Future high temperature applications for SiC integrated circuits<\/a>
\nZetterling, C.-M., Lanni, L., Ghandi, R., Malm, B. G., and \u00d6stling, M.
\nPhys. Status Solidi C, vol. 9, pp. 1647 – 1650, 2012.<\/p>\n

PhD and Licentiate theses<\/h1>\n

SiC Readout IC for High Temperature Seismic Sensor System<\/a>
\nYe Tian
\nKTH Doctoral Thesis, October 2017. (Fulltext downloadable on link)<\/p>\n

High-Temperature Analog and Mixed-Signal Integrated Circuits in Bipolar Silicon Carbide Technology<\/a>
\nRaheleh Hedayati
\nKTH Doctoral Thesis, September 2017. (Fulltext downloadable on link)<\/p>\n

High Temperature Bipolar SiC Power Integrated Circuits<\/a>
\nSaleh Kargarrazi
\nKTH Doctoral Thesis, March 2017. (Fulltext downloadable on link)<\/p>\n

Radiation Hardness of 4H-SiC Devices and Circuits<\/a>
\nSethu Saveda Suvanam
\nKTH Doctoral Thesis, February 2017. (Fulltext downloadable on link)<\/p>\n

Bipolar Silicon Carbide Integrated Circuits for High Temperature Power Applications<\/a>
\nSaleh Kargarrazi
\nKTH Licentiate Thesis, December 2015. (Fulltext downloadable on link)<\/p>\n

Silicon Carbide Bipolar Technology for High Temperature Integrated Circuits<\/a>
\nLuigia Lanni
\nKTH Doctoral Thesis, June 2014. (Fulltext downloadable on link)<\/p>\n

Silicon Carbide Sigma-Delta Modulator for High Temperature Applications<\/a>
\nYe Tian
\nKTH Licentiate Thesis, June 2014. (Fulltext downloadable on link)<\/p>\n

Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications<\/a>
\nLuigia Lanni
\nKTH Licentiate Thesis, February 2012. (Fulltext downloadable on link)<\/p>\n

A full list of SiC publications by C.M. Zetterling<\/a><\/p>\n<\/div>","protected":false},"excerpt":{"rendered":"

Recent publications 500 \u00b0C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits Elahipanah, H., Kargarrazi, S., Salemi, A., \u00d6stling, M., and Zetterling, C.-M., IEEE Electron Device Letters, vol. 38, 2017. SiC BJT Compact DC Model With Continuous- Temperature Scalability From 300 to 773 K Tian, Y., Hedayati, R., and Zetterling, C.-M., IEEE Trans. Electron […]<\/p>\n","protected":false},"author":528,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"inline_featured_image":false,"footnotes":""},"class_list":["post-11","page","type-page","status-publish","hentry"],"jetpack_sharing_enabled":true,"jetpack_shortlink":"https:\/\/wp.me\/P5kmEU-b","_links":{"self":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages\/11","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/users\/528"}],"replies":[{"embeddable":true,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/comments?post=11"}],"version-history":[{"count":10,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages\/11\/revisions"}],"predecessor-version":[{"id":94,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages\/11\/revisions\/94"}],"wp:attachment":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/media?parent=11"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}