{"id":13,"date":"2014-10-17T12:42:42","date_gmt":"2014-10-17T10:42:42","guid":{"rendered":"http:\/\/www.kth.se\/blogs\/hotsic\/?page_id=13"},"modified":"2017-09-19T04:18:24","modified_gmt":"2017-09-19T02:18:24","slug":"conferences","status":"publish","type":"page","link":"https:\/\/www.kth.se\/blogs\/hotsic\/conferences\/","title":{"rendered":"Conferences"},"content":{"rendered":"

Coming Conference Presentations:<\/h2>\n

ICSCRM 2017 in Washington DC, September 17-22, 2017<\/a>
\nTU.D1.4 Zetterling, C.-M. Extreme Environment SiC Integrated Circuits
\nWE.E1.5 Shakir, M. et al, Electrical Characterization of Integrated 2-input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiC-Technology
\nTH.CP.4 Ekstr\u00f6m, M. et al, Low temperature Ni-Al ohmic contacts to p-type 4H-SiC using semi-salicide processing<\/p>\n

Previous Conference Presentations:<\/h2>\n

Spring MRS 2016, session EP2: Silicon Carbide \u2014 Substrates, Epitaxy, Devices, Circuits and Graphene<\/a>
\nHigh Temperature Integrated Amplifier in Bipolar 4H-SiC
\nHedayati, R., Lanni, L., Rusu, A., and Zetterling, C.-M.<\/p>\n

ICSCRM 2015 in Giardini Naxos, Italy (SiCily), October 4 – 9, 2015<\/a>
\nA 500 \u00b0C Monolithic SiC BJT Latched Comparator
\nTian, Y., Lanni, L., Rusu, A., and Zetterling, C.-M.<\/p>\n

Geometrical Effect Dependency on the On-State Characteristics in 5.6 kV 4H-SiC BJTs
\nSalemi, A., Elahipanah, H., Zetterling, C.-M., and \u00d6stling, M.<\/p>\n

Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices
\nElahipanah, H., Salemi, A., Zetterling, C.-M., and \u00d6stling, M.<\/p>\n

The 27th International Symposium on Power Semiconductor Devices and ICs<\/a>
\nArea- and Efficiency-Optimized Junction Termination for a 5.6 kV SiC BJT Process with Low On-Resistance
\nSalemi, A., Elahipanah, H., Malm, G., Zetterling, C.-M., and \u00d6stling, M.<\/p>\n

Conductivity Modulated On-Axis 4H-SiC 10+ kV Pin Diodes
\nSalemi, A., Elahipanah, H., Hall\u00e9n, A., Malm, G., Zetterling, C.-M., and \u00d6stling, M.<\/p>\n

A Monolithic SiC Drive Circuit for SiC Power BJTs
\nKargarrazi, S., Lanni, L., Rusu, A., and Zetterling, C.-M.<\/p>\n

ECSCRM 2014 in Grenoble, France, September 21 – 25, 2014<\/a>
\nECL-based SiC logic circuits for extreme temperatures
\nLanni, L., Malm, B. G., \u00d6stling, M., and Zetterling, C.-M.<\/p>\n

Tailoring the interface between dielectric and 4H-SiC by ion implantation Suvanam, S.S., Martin, D., Zetterling, C.-M., and Hallen, A.<\/p>\n

Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC
\nSmedfors, K., Zetterling, C.-M., \u00d6stling<\/p>\n

Design and Characterization of 500 \u00b0C Schmitt Trigger in 4H-SiC
\nKargarrazi, S., Lanni, L., and Zetterling, C.-M.<\/p>\n

Simulation study of the breakdown voltage in high voltage 4H-SiC BJT with respect to oxide and interface charges
\nSalemi, A., Elahipanah, H., Zetterling, C.-M., and \u00d6stling, M.<\/p>\n

Implantation-Free 4H-SiC Bipolar Junction Transistor with Trenched Junction Termination Extension
\nElahipanah, H., Salemi, A., Zetterling, C.-M., and \u00d6stling, M.<\/p>\n

Spring MRS 2014, session DD: Silicon Carbide – Materials, Processing and Devices<\/a>
\nDD3.01 High Voltage SiC Power Switches with Superior Energy Efficiency and Their Drive Electronics
\nMikael \u00d6stling (invited)<\/p>\n

DD3.04 Design, Fabrication and Characterization of High Voltage PiN Diodes Using On-Axis 4H-SiC
\nSalemi, A., Buono, B., Hallen, A., Ul Hassan, J., Bergman, P., Zetterling, C.-M., and \u00d6stling, M.<\/p>\n

DD3.06 Integrated Silicon Carbide Bipolar Technology for Radio Frequency Applications
\nMalm, B. G., Lanni, L., and Zetterling, C.-M.<\/p>\n

Technical program for ICSCRM 2013<\/a>
\nMo-P-38 p.60
\nStable Ohmic Nickel\/Titanium\/Aluminium Contacts to 4H-SiC Characterized from -40\u00b0C to 500\u00b0C
\nK. Smedfors, L. Lanni, M. \u00d6stling, and C. -M. Zetterling<\/p>\n

11:30 Th-2A-3 p.279
\nFabrication of 10 kV PiN Diodes Using On-Axis 4H-SiC
\nA. Salemi, B. Buono, A. Hall\u00e9n, J. Hassan, J. P. Bergman, C. -M. Zetterling, and M. \u00d6stling<\/p>\n

11:30 Th-2B-3 p.284
\nCharacterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor
\nJ. -H. Xia, D. Martin, S. S. Suvanam, C. -M. Zetterling, and M. \u00d6stling<\/p>\n

Th-P-41 p.337
\nSiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs
\nL. Lanni, B. G. Malm, M. \u00d6stling, and C. -M. Zetterling
\nICSCRM 2013<\/a><\/p>\n

SiC Technologies for High Voltage Devices and Integrated Circuits in Harsh Environments<\/a>
\nBCTM 2013 Short Course on GaN and SiC based wide-bandgap semiconductor designs: technologies, devices and circuits (part 1 of 4)
\nInstructor: Prof. Carl-Mikael Zetterling, KTH, Sweden
\nIEEE BCTM 2013<\/a><\/p>\n

A 4H-SiC Bipolar Technology for High-temperature Integrated Circuits<\/a>
\nLanni, L., Malm, B. G., Zetterling, C.-M., \u00d6stling, M.
\nIMAPS HiTEN 2013<\/a><\/p>\n

Effects of 3 MeV protons on 4H-SiC bipolar devices and integrated OR-NOR gate<\/a>
\nSuvanam, S.S., Lanni, L., Zetterling, C.-M., Hall\u00e9n, A., Malm, B.G.
\nRADECS 2013<\/a><\/p>\n<\/div>","protected":false},"excerpt":{"rendered":"

Coming Conference Presentations: ICSCRM 2017 in Washington DC, September 17-22, 2017 TU.D1.4 Zetterling, C.-M. Extreme Environment SiC Integrated Circuits WE.E1.5 Shakir, M. et al, Electrical Characterization of Integrated 2-input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiC-Technology TH.CP.4 Ekstr\u00f6m, M. et al, Low temperature Ni-Al ohmic contacts to p-type 4H-SiC using semi-salicide processing […]<\/p>\n","protected":false},"author":528,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"inline_featured_image":false,"footnotes":""},"class_list":["post-13","page","type-page","status-publish","hentry"],"jetpack_sharing_enabled":true,"jetpack_shortlink":"https:\/\/wp.me\/P5kmEU-d","_links":{"self":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages\/13","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/users\/528"}],"replies":[{"embeddable":true,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/comments?post=13"}],"version-history":[{"count":8,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages\/13\/revisions"}],"predecessor-version":[{"id":97,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages\/13\/revisions\/97"}],"wp:attachment":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/media?parent=13"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}