{"id":20,"date":"2014-10-17T12:43:28","date_gmt":"2014-10-17T10:43:28","guid":{"rendered":"http:\/\/www.kth.se\/blogs\/hotsic\/?page_id=20"},"modified":"2017-09-19T04:08:48","modified_gmt":"2017-09-19T02:08:48","slug":"related-projects","status":"publish","type":"page","link":"https:\/\/www.kth.se\/blogs\/hotsic\/related-projects\/","title":{"rendered":"Related projects"},"content":{"rendered":"

Other SiC projects at KTH Integrated Devices and Circuits<\/h1>\n
\n

Working on Venus<\/h2>\n

See separate website<\/a><\/p>\n

\n

High Voltage Device Design in SiC<\/h2>\n

Project Leader: Prof. Mikael \u00d6stling<\/p>\n

Recent publications<\/h3>\n

Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors<\/a>
\nHossein Elahipanah
\nKTH Doctoral Thesis, September 2017. (Fulltext downloadable on link)<\/p>\n

Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes<\/a>
\nArash Salemi
\nKTH Doctoral Thesis, January 2017. (Fulltext downloadable on link)<\/p>\n

500 \u00b0C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits<\/a>
\nElahipanah, H., Kargarrazi, S., Salemi, A., \u00d6stling, M., and Zetterling, C.-M., IEEE Electron Device Letters, vol. 38, 2017. <\/p>\n

A Comprehensive Study on the Geometrical Effects in High-Power 4H\u2013SiC BJTs<\/a>
\nSalemi, A., Elahipanah, H., Zetterling, C.-M., and \u00d6stling, M., IEEE Trans. Electron Devices, vol. 64, p. 882, 2017.<\/p>\n

Intertwined Design: A Novel Lithographic Method to Realize Area Efficient High-Voltage SiC BJTs and Darlington Transistors<\/a>
\nElahipanah, H., Salemi, A., Zetterling, C.-M., and \u00d6stling, M., IEEE Trans. Electron Devices, vol. 63, p. 4366, 2016.<\/p>\n

Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs<\/a>
\nSalemi, A., Elahipanah, H., Zetterling, C.-M., and \u00d6stling, M., IEEE Electron Device Letters, vol. 36, p. 1069, 2015.<\/p>\n

Area- and Efficiency-Optimized Junction Termination for a 5.6 kV SiC BJT Process with Low On-Resistance<\/a>
\nSalemi, A., Elahipanah, H., Malm, G., Zetterling, C.-M., and \u00d6stling, M., ISPSD 2015.<\/p>\n

Conductivity Modulated On-Axis 4H-SiC 10+ kV Pin Diodes<\/a>
\nSalemi, A., Elahipanah, H., Hall\u00e9n, A., Malm, G., Zetterling, C.-M., and \u00d6stling, M., ISPSD 2015.<\/p>\n

5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension<\/a>
\nElahipanah, H., Salemi, A., Zetterling, C.-M., and \u00d6stling, M.
\nIEEE Electron Device Letters, vol 36(2), pp. 168 – 170, 2015.<\/p>\n

Implantation-Free 4H-SiC Bipolar Junction Transistor with Trenched Junction Termination Extension<\/a>
\nElahipanah, H., Salemi, A., Zetterling, C.-M., and \u00d6stling, M.
\nMaterials Science Forum, vol 821-823, pp. 838 – 841, 2015.<\/p>\n

Simulation study of the breakdown voltage in high voltage 4H-SiC BJT with respect to oxide and interface charges<\/a>
\nSalemi, A., Elahipanah, H., Zetterling, C.-M., and \u00d6stling, M.
\nMaterials Science Forum, vol 821-823, pp. 834 – 837, 2015.<\/p>\n

Fabrication of 10 kV PiN Diodes Using On-Axis 4H-SiC<\/a>
\nSalemi, A., Buono, B., Hall\u00e9n, A., Hassan, J., Bergman, J.P., Zetterling, C.-M., and \u00d6stling, M.
\nMaterials Science Forum, vol 778-780, pp. 836 – 839, 2014.<\/p>\n

Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT<\/a>
\nSalemi, A., Elahipanah, H., Buono, B., Zetterling, C.-M., \u00d6stling, M., Materials Science Forum, 740-742, p. 974, 2013.<\/p>\n

Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors<\/a>
\nBenedetto Buono
\nKTH Ph.D. Thesis, June 2012. (Fulltext downloadable on link)<\/p>\n

Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors<\/a>
\nReza Ghandi
\nKTH Ph.D. Thesis, March 2011. (Fulltext downloadable on link)<\/p>\n

\n

Radiation hardness of SiC Devices<\/h2>\n

Project Leader: Prof. Anders Hall\u00e9n<\/p>\n

Recent publications<\/h3>\n

The Effect of Neutron Radiation on the Electrical Characteristics of 4H-SiC DMOSFETs<\/a>
\nKim, S.-S., Kang, M.-S., Hallen, A., Zetterling, C.-M., Jung, E.-S., Yang, C.-H., Choo, K.-N., Cho, M.-S., Koo, S.-M.
\nECSCRM 2014<\/p>\n

Radiation-Hard Dielectrics for 4H\u2013SiC: A Comparison Between SiO2 and Al2O3<\/a>
\nUsman, M. and Hallen, A.
\nIEEE Electron Device Letters, Vol. 32(12), pp. 1653 – 1655, 2011.<\/p>\n

Impact of Ionizing Radiation on 4H-SiC Devices<\/a>
\nMuhammad Usman
\nKTH Ph.D. Thesis, February 2012. (Fulltext downloadable on link)<\/p>\n<\/div>","protected":false},"excerpt":{"rendered":"

Other SiC projects at KTH Integrated Devices and Circuits Working on Venus See separate website High Voltage Device Design in SiC Project Leader: Prof. Mikael \u00d6stling Recent publications Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors Hossein Elahipanah KTH Doctoral Thesis, September 2017. (Fulltext downloadable on link) Silicon Carbide Technology for High- and Ultra-High-Voltage […]<\/p>\n","protected":false},"author":528,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"inline_featured_image":false,"footnotes":""},"class_list":["post-20","page","type-page","status-publish","hentry"],"jetpack_sharing_enabled":true,"jetpack_shortlink":"https:\/\/wp.me\/P5kmEU-k","_links":{"self":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages\/20","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/users\/528"}],"replies":[{"embeddable":true,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/comments?post=20"}],"version-history":[{"count":7,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages\/20\/revisions"}],"predecessor-version":[{"id":95,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages\/20\/revisions\/95"}],"wp:attachment":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/media?parent=20"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}