{"id":5,"date":"2014-10-17T12:26:37","date_gmt":"2014-10-17T10:26:37","guid":{"rendered":"http:\/\/www.kth.se\/blogs\/hotsic\/?page_id=5"},"modified":"2016-04-05T22:14:57","modified_gmt":"2016-04-05T20:14:57","slug":"start","status":"publish","type":"page","link":"https:\/\/www.kth.se\/blogs\/hotsic\/","title":{"rendered":"High Temperature Power Electronic Systems with SiC Integrated Circuits"},"content":{"rendered":"<div class=\"post-content-wrapper\"><h1><a href=\"https:\/\/www.kth.se\/blogs\/hotsic\/files\/2016\/03\/HOTSiC.gif\" rel=\"attachment wp-att-55\"><img loading=\"lazy\" decoding=\"async\" class=\"size-full wp-image-55 aligncenter\" src=\"https:\/\/www.kth.se\/blogs\/hotsic\/files\/2016\/03\/HOTSiC.gif\" alt=\"HOTSiC\" width=\"346\" height=\"90\" \/><\/a><\/h1>\n<h1 style=\"text-align: center\">FIVE reasons why SiC is HOT<\/h1>\n<p style=\"text-align: center\"><a href=\"https:\/\/www.kth.se\/blogs\/hotsic\/files\/2016\/03\/FIVE.pdf\" rel=\"attachment wp-att-52\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-52 size-full\" src=\"https:\/\/www.kth.se\/blogs\/hotsic\/files\/2014\/10\/FIVE.jpg\" alt=\"FIVE\" width=\"312\" height=\"171\" \/><\/a><\/p>\n<p style=\"text-align: center\"><a href=\"https:\/\/www.kth.se\/blogs\/hotsic\/files\/2016\/03\/FIVE.pdf\" rel=\"\">FIVE reasons slide presentation<\/a><\/p>\n<hr \/>\n<h2 style=\"text-align: center\">KTH achieves 500 \u00b0C and\u00a0600 \u00b0C operation with digital integrated circuit<\/h2>\n<p style=\"text-align: center\"><a href=\"https:\/\/www.kth.se\/blogs\/hotsic\/files\/2014\/10\/ORNOR.gif\" rel=\"attachment wp-att-51\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone size-full wp-image-51\" src=\"https:\/\/www.kth.se\/blogs\/hotsic\/files\/2014\/10\/ORNOR.gif\" alt=\"ORNOR\" width=\"247\" height=\"264\" \/><\/a><\/p>\n<p style=\"text-align: center\"><a href=\"http:\/\/dx.doi.org\/10.4028\/www.scientific.net\/MSF.821-823.910\" target=\"_blank\"> ECL-based SiC logic circuits for extreme temperatures<\/a><br \/>\nLanni, L., Malm, B. G., \u00d6stling, M., and Zetterling, C.-M.<br \/>\nMaterials Science Forum, 821-823, p. 910, 2015.<\/p>\n<p style=\"text-align: center\"><a href=\"http:\/\/dx.doi.org\/10.1109\/LED.2013.2272649\" target=\"_blank\"> 500 \u00b0C Bipolar Integrated OR\/NOR Gate in 4H-SiC<\/a><br \/>\nLanni, L., Malm, B.G., \u00d6stling, M., Zetterling, C.-M.<br \/>\nIEEE Electron Device Letters, vol 34(9), pp. 1091 &#8211; 1093, 2013.<\/p>\n<hr \/>\n<h2 style=\"text-align: center\">KTH achieves 500 \u00b0C<\/h2>\n<h2 style=\"text-align: center\">operation with analog integrated circuit<\/h2>\n<p style=\"text-align: center\"><a href=\"https:\/\/www.kth.se\/blogs\/hotsic\/files\/2014\/10\/OPAMP.gif\" rel=\"attachment wp-att-49\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone size-medium wp-image-49\" src=\"https:\/\/www.kth.se\/blogs\/hotsic\/files\/2014\/10\/OPAMP-625x230.gif\" alt=\"OPAMP\" width=\"625\" height=\"230\" srcset=\"https:\/\/www.kth.se\/blogs\/hotsic\/files\/2014\/10\/OPAMP-625x230.gif 625w, https:\/\/www.kth.se\/blogs\/hotsic\/files\/2014\/10\/OPAMP-768x283.gif 768w, https:\/\/www.kth.se\/blogs\/hotsic\/files\/2014\/10\/OPAMP-900x331.gif 900w, https:\/\/www.kth.se\/blogs\/hotsic\/files\/2014\/10\/OPAMP-624x230.gif 624w\" sizes=\"auto, (max-width: 625px) 100vw, 625px\" \/><\/a><\/p>\n<p style=\"text-align: center\"><a href=\"http:\/\/dx.doi.org\/10.1109\/LED.2014.2322335\" target=\"_blank\"> A Monolithic, 500 \u00b0C Operational Amplifier in 4H-SiC Bipolar Technology<\/a><br \/>\nHedayati, R., Lanni, L., Rodriguez, S., Malm, B.G., Rusu, A., Zetterling, C.-M.<br \/>\nIEEE Electron Device Letters, vol 35(7), pp. 693 &#8211; 695, 2014.<\/p>\n<hr \/>\n<h2 style=\"text-align: center\">Part of the project group receives funding for Wallenberg project <a href=\"http:\/\/www.workingonvenus.se\/\">Working on Venus<\/a><\/h2>\n<\/div>","protected":false},"excerpt":{"rendered":"<p>FIVE reasons why SiC is HOT FIVE reasons slide presentation KTH achieves 500 \u00b0C and\u00a0600 \u00b0C operation with digital integrated circuit ECL-based SiC logic circuits for extreme temperatures Lanni, L., Malm, B. G., \u00d6stling, M., and Zetterling, C.-M. Materials Science Forum, 821-823, p. 910, 2015. 500 \u00b0C Bipolar Integrated OR\/NOR Gate in 4H-SiC Lanni, L., [&hellip;]<\/p>\n","protected":false},"author":528,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page-templates\/front-page.php","meta":{"inline_featured_image":false,"footnotes":""},"class_list":["post-5","page","type-page","status-publish","hentry"],"jetpack_sharing_enabled":true,"jetpack_shortlink":"https:\/\/wp.me\/P5kmEU-5","_links":{"self":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages\/5","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/users\/528"}],"replies":[{"embeddable":true,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/comments?post=5"}],"version-history":[{"count":15,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages\/5\/revisions"}],"predecessor-version":[{"id":72,"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/pages\/5\/revisions\/72"}],"wp:attachment":[{"href":"https:\/\/www.kth.se\/blogs\/hotsic\/wp-json\/wp\/v2\/media?parent=5"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}