Radiation Hardness of 4H-SiC Devices and Circuits

Time: Fri 2017-02-17 10.00

Location: Ka-Sal C (Sal Sven-Olof Öhrvik), KTH, Kistagången 16, Kista

Subject area: Information and Communication Technology

Doctoral student: Sethu Saveda Suvanam, Department of Electronics

Opponent: Professor Ulrike Grossner, Department of Information Technology and Electrical Engineering, ETH Zürich, Zürich, Switzerland

Supervisor: Professor Anders Hallén

2017-02-17T10:00 2017-02-17T10:00 Radiation Hardness of 4H-SiC Devices and Circuits (Information and Communication Technology) Radiation Hardness of 4H-SiC Devices and Circuits (Information and Communication Technology)
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