Seminar 9: The impact of Wide Bandgap Semiconductors in Power Electronics - Application Examples

Time: Fri 2018-05-25 15.00 - 17.00

Lecturer: Juan Colmenares Herrera, Infineon Technologies

Location: Teknikringen 33, floor 4, room 3412

Abstract: Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. In this presentation, the impact of such semiconductors in different power electronics applications is evaluated and some application examples are given.

Bio: Juan Colmenares received his Diploma degree in Electronic Engineering, from the Universidad Simon Bolivar in Venezuela in 2012 and obtained his PhD degree from KTH Royal Institute of Technology in Sweden in 2016. In 2017, he worked as a research scientist for ABB Corporate Research in Västerås and currently he is working for Infineon Technologies as a field application engineer of high power semiconductors, responsible for the Nordic European region. His research interests include gate-driver design for SiC Power Modules, High Efficiency Converters and High Temperature Electronics.

2018-05-25T15:00 2018-05-25T17:00 Seminar 9: The impact of Wide Bandgap Semiconductors in Power Electronics - Application Examples Seminar 9: The impact of Wide Bandgap Semiconductors in Power Electronics - Application Examples
Top page top