Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
13 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 136516 |
3171 | 2 | WAFER BONDING//ANODIC BONDING//DIRECT BONDING | 2326 |
37235 | 1 | MAKYOH TOPOGRAPHY//SURFACE FLATNESS//MAKYOH | 86 |
Terms with highest relevance score |
rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|---|
1 | MAKYOH TOPOGRAPHY | authKW | 3695317 | 13% | 92% | 11 |
2 | SURFACE FLATNESS | authKW | 780748 | 8% | 30% | 7 |
3 | MAKYOH | authKW | 732956 | 2% | 100% | 2 |
4 | MAKYOH IMAGES | authKW | 732956 | 2% | 100% | 2 |
5 | WAFER HANDLING ROBOT | authKW | 659658 | 3% | 60% | 3 |
6 | 300 MM SILICON CRYSTAL | authKW | 366478 | 1% | 100% | 1 |
7 | 3D IN SITU OBSERVATION DEVICE | authKW | 366478 | 1% | 100% | 1 |
8 | COP CONTAMINATION | authKW | 366478 | 1% | 100% | 1 |
9 | DYNAMIC WAFER HANDLING | authKW | 366478 | 1% | 100% | 1 |
10 | ECCENTRICITY RECOGNITION | authKW | 366478 | 1% | 100% | 1 |
Web of Science journal categories |
chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | Physics, Applied | 495 | 49% | 0% | 42 |
2 | Crystallography | 302 | 16% | 0% | 14 |
3 | Materials Science, Coatings & Films | 212 | 12% | 0% | 10 |
4 | Materials Science, Multidisciplinary | 209 | 36% | 0% | 31 |
5 | Physics, Condensed Matter | 119 | 21% | 0% | 18 |
6 | Engineering, Electrical & Electronic | 90 | 21% | 0% | 18 |
7 | Engineering, Industrial | 89 | 6% | 0% | 5 |
8 | Microscopy | 85 | 3% | 0% | 3 |
9 | Optics | 67 | 13% | 0% | 11 |
10 | Engineering, Manufacturing | 29 | 3% | 0% | 3 |
Address terms |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | MICROSCOPIE ELE ON GRP DIELE | 366478 | 1% | 100% | 1 |
2 | TECH PHYS MAT SCI | 222535 | 27% | 3% | 23 |
3 | TECH PHYS MAT | 91618 | 1% | 25% | 1 |
4 | INGRAM ENGN | 21273 | 3% | 2% | 3 |
5 | G SCOP UMR5272 | 14657 | 1% | 4% | 1 |
6 | LEHRSTUHL ELEKT BAUELEMENTE | 14657 | 1% | 4% | 1 |
7 | MATH GENIE IND | 1063 | 1% | 0% | 1 |
8 | GRENOBLE INP | 480 | 1% | 0% | 1 |
9 | TOTSUKA KU | 311 | 1% | 0% | 1 |
10 | SEMICOND MAT SCI | 252 | 1% | 0% | 1 |
Journals |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | GEC-JOURNAL OF SCIENCE & TECHNOLOGY | 33314 | 1% | 9% | 1 |
2 | JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES | 7164 | 3% | 1% | 3 |
3 | RESEARCH-TECHNOLOGY MANAGEMENT | 3884 | 3% | 0% | 3 |
4 | SOLID STATE TECHNOLOGY | 1768 | 3% | 0% | 3 |
5 | JOURNAL OF CRYSTAL GROWTH | 1672 | 14% | 0% | 12 |
6 | ACTA CHIMICA ACADEMIAE SCIENTARIUM HUNGARICAE | 1089 | 1% | 0% | 1 |
7 | NUCLEAR ENGINEERING INTERNATIONAL | 833 | 1% | 0% | 1 |
8 | DEFECT AND DIFFUSION FORUM | 798 | 1% | 0% | 1 |
9 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 714 | 5% | 0% | 4 |
10 | EUROPEAN JOURNAL OF PHYSICS | 663 | 2% | 0% | 2 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |