Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
13 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 136516 |
3171 | 2 | WAFER BONDING//ANODIC BONDING//DIRECT BONDING | 2326 |
4923 | 1 | WAFER BONDING//ANODIC BONDING//DIRECT BONDING | 1730 |
23885 | 1 | ANAL STRUCT MAT//UNITE RECH PHYS SOLIDE//PHYS MATIERE CONDENSEE NANOSCI LR ES 40 11 | 354 |
32118 | 1 | MAT SCI TECHNOL VITREOUS MAT//ISOPLANAR OPTICAL SYSTEM//EIKONAL THEORY | 156 |
37235 | 1 | MAKYOH TOPOGRAPHY//SURFACE FLATNESS//MAKYOH | 86 |
Terms with highest relevance score |
rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|---|
1 | WAFER BONDING | authKW | 808803 | 7% | 34% | 174 |
2 | ANODIC BONDING | authKW | 670152 | 4% | 57% | 87 |
3 | DIRECT BONDING | authKW | 223939 | 2% | 42% | 39 |
4 | LOW TEMPERATURE BONDING | authKW | 193087 | 1% | 49% | 29 |
5 | SILICON WAFER BONDING | authKW | 182536 | 1% | 84% | 16 |
6 | ROOM TEMPERATURE BONDING | authKW | 180627 | 1% | 67% | 20 |
7 | SURFACE ACTIVATED BONDING | authKW | 162564 | 1% | 67% | 18 |
8 | MAKYOH TOPOGRAPHY | authKW | 136607 | 0% | 92% | 11 |
9 | ANAL STRUCT MAT | address | 121932 | 0% | 100% | 9 |
10 | HERMETICITY | authKW | 121914 | 1% | 50% | 18 |
Web of Science journal categories |
chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | Physics, Applied | 15871 | 53% | 0% | 1230 |
2 | Engineering, Electrical & Electronic | 6841 | 33% | 0% | 767 |
3 | Instruments & Instrumentation | 5558 | 16% | 0% | 371 |
4 | Nanoscience & Nanotechnology | 5010 | 17% | 0% | 387 |
5 | Materials Science, Multidisciplinary | 4974 | 34% | 0% | 792 |
6 | Materials Science, Coatings & Films | 2751 | 8% | 0% | 191 |
7 | Physics, Condensed Matter | 1136 | 13% | 0% | 312 |
8 | Electrochemistry | 750 | 5% | 0% | 127 |
9 | Optics | 628 | 8% | 0% | 191 |
10 | Metallurgy & Metallurgical Engineering | 521 | 6% | 0% | 138 |
Address terms |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | ANAL STRUCT MAT | 121932 | 0% | 100% | 9 |
2 | MAT SCI TECHNOL VITREOUS MAT | 86704 | 0% | 80% | 8 |
3 | UNITE RECH PHYS SOLIDE | 66381 | 0% | 70% | 7 |
4 | WAFER BONDING | 54188 | 0% | 67% | 6 |
5 | PHYS MATIERE CONDENSEE NANOSCI LR ES 40 11 | 40644 | 0% | 100% | 3 |
6 | TECHNOL SILICIUM | 34672 | 0% | 32% | 8 |
7 | ADV MICROSYST INTEGRAT PACKAGING | 27096 | 0% | 100% | 2 |
8 | FUNDAMENTAL SCI NOVEL MICRO NANO DEV | 27096 | 0% | 100% | 2 |
9 | OPTOELECT OKI | 27096 | 0% | 100% | 2 |
10 | SCI GENIE MAT SIM | 27096 | 0% | 100% | 2 |
Journals |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 27624 | 5% | 2% | 108 |
2 | SENSORS AND ACTUATORS A-PHYSICAL | 26118 | 6% | 1% | 140 |
3 | MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 20853 | 3% | 2% | 76 |
4 | JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 18107 | 3% | 2% | 61 |
5 | IEEE TRANSACTIONS ON ADVANCED PACKAGING | 8999 | 1% | 3% | 26 |
6 | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 7678 | 1% | 2% | 29 |
7 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 5467 | 5% | 0% | 113 |
8 | PHILIPS JOURNAL OF RESEARCH | 4037 | 0% | 3% | 10 |
9 | JOURNAL OF ELECTRONIC MATERIALS | 3213 | 2% | 0% | 50 |
10 | APPLIED PHYSICS LETTERS | 3080 | 7% | 0% | 165 |
Author Key Words |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass | LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | WAFER BONDING | 808803 | 7% | 34% | 174 | Search WAFER+BONDING | Search WAFER+BONDING |
2 | ANODIC BONDING | 670152 | 4% | 57% | 87 | Search ANODIC+BONDING | Search ANODIC+BONDING |
3 | DIRECT BONDING | 223939 | 2% | 42% | 39 | Search DIRECT+BONDING | Search DIRECT+BONDING |
4 | LOW TEMPERATURE BONDING | 193087 | 1% | 49% | 29 | Search LOW+TEMPERATURE+BONDING | Search LOW+TEMPERATURE+BONDING |
5 | SILICON WAFER BONDING | 182536 | 1% | 84% | 16 | Search SILICON+WAFER+BONDING | Search SILICON+WAFER+BONDING |
6 | ROOM TEMPERATURE BONDING | 180627 | 1% | 67% | 20 | Search ROOM+TEMPERATURE+BONDING | Search ROOM+TEMPERATURE+BONDING |
7 | SURFACE ACTIVATED BONDING | 162564 | 1% | 67% | 18 | Search SURFACE+ACTIVATED+BONDING | Search SURFACE+ACTIVATED+BONDING |
8 | MAKYOH TOPOGRAPHY | 136607 | 0% | 92% | 11 | Search MAKYOH+TOPOGRAPHY | Search MAKYOH+TOPOGRAPHY |
9 | HERMETICITY | 121914 | 1% | 50% | 18 | Search HERMETICITY | Search HERMETICITY |
10 | WAFER DIRECT BONDING | 109019 | 1% | 62% | 13 | Search WAFER+DIRECT+BONDING | Search WAFER+DIRECT+BONDING |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 2 |