Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
13 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 136516 |
893 | 2 | SIGE//STRAINED SI//GERMANIUM | 11547 |
2006 | 1 | STRAINED SI//STRAINED SILICON//SIGE | 2431 |
7126 | 1 | STRAINED SI1 XGEX SI QUANTUM WELLS//SI GE INTERFACE//DIFFRACTOMETER OPTIMISATION | 1430 |
7342 | 1 | GESN//GERMANIUM TIN//GESN ALLOY | 1403 |
7513 | 1 | ATOMIC LAYER DOPING//HYDROGEN SURFACTANT//ELECT INTELLIGENT SYST | 1384 |
8169 | 1 | GERMANIUM//MBE//GE MOS | 1308 |
9401 | 1 | SELECTIVE EPITAXIAL GROWTH//ELEVATED SOURCE DRAIN//GERMANIUM SILICON COMPOUNDS | 1191 |
14400 | 1 | SIGEC//SI1 YCY//SI1 X YGEXCY | 803 |
15669 | 1 | SURFACES OF CRYSTALS//B SURFACE PHASE BSP//INDIRECT GAP ALGAAS EPILAYERS | 725 |
20348 | 1 | CERAM PHYS//RIN//SINGLE WAFER FURNACE SWF | 487 |
22953 | 1 | POLY SIGE//SIGE OXIDE//SILICON THIN FILM SOLAR CELL PROJECT | 385 |
Terms with highest relevance score |
rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|---|
1 | SIGE | authKW | 446591 | 4% | 36% | 459 |
2 | STRAINED SI | authKW | 330594 | 1% | 70% | 172 |
3 | GERMANIUM | authKW | 293771 | 5% | 17% | 625 |
4 | STRAINED SILICON | authKW | 182080 | 1% | 58% | 115 |
5 | PHYSICS, APPLIED | WoSSC | 110390 | 62% | 1% | 7152 |
6 | GESN | authKW | 107754 | 0% | 90% | 44 |
7 | VIRTUAL SUBSTRATE | authKW | 106863 | 0% | 85% | 46 |
8 | SILICON GERMANIUM | authKW | 105566 | 1% | 29% | 136 |
9 | SILICON NANOSCI | address | 86802 | 0% | 58% | 55 |
10 | MOSFET | authKW | 72390 | 3% | 9% | 303 |
Web of Science journal categories |
chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | Physics, Applied | 110390 | 62% | 1% | 7152 |
2 | Materials Science, Coatings & Films | 41996 | 14% | 1% | 1619 |
3 | Physics, Condensed Matter | 35481 | 30% | 0% | 3457 |
4 | Engineering, Electrical & Electronic | 13917 | 22% | 0% | 2564 |
5 | Materials Science, Multidisciplinary | 10061 | 23% | 0% | 2684 |
6 | Nanoscience & Nanotechnology | 4025 | 7% | 0% | 850 |
7 | Crystallography | 2863 | 5% | 0% | 558 |
8 | Electrochemistry | 722 | 3% | 0% | 323 |
9 | Chemistry, Physical | 656 | 8% | 0% | 970 |
10 | Physics, Multidisciplinary | 602 | 5% | 0% | 586 |
Address terms |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | SILICON NANOSCI | 86802 | 0% | 58% | 55 |
2 | L NESS | 64861 | 1% | 27% | 88 |
3 | ADV S | 60931 | 1% | 32% | 70 |
4 | CERAM PHYS | 51132 | 1% | 28% | 67 |
5 | CRYSTAL SCI TECHNOL | 47580 | 1% | 29% | 60 |
6 | SEMICOND PHOTON | 43828 | 0% | 31% | 52 |
7 | MBE | 36953 | 0% | 32% | 42 |
8 | HALBLEITERTECH | 35142 | 1% | 18% | 72 |
9 | SILICON NANO DEVICE | 31766 | 1% | 20% | 58 |
10 | ESAT INSYS | 27721 | 0% | 44% | 23 |
Journals |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | APPLIED PHYSICS LETTERS | 55896 | 13% | 1% | 1530 |
2 | THIN SOLID FILMS | 36322 | 6% | 2% | 707 |
3 | IEEE ELECTRON DEVICE LETTERS | 33641 | 3% | 4% | 341 |
4 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 23202 | 3% | 2% | 370 |
5 | SOLID-STATE ELECTRONICS | 21139 | 2% | 3% | 281 |
6 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 19850 | 2% | 3% | 246 |
7 | JOURNAL OF APPLIED PHYSICS | 18839 | 8% | 1% | 887 |
8 | JOURNAL OF CRYSTAL GROWTH | 17730 | 4% | 1% | 461 |
9 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 14816 | 3% | 2% | 307 |
10 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 9845 | 1% | 3% | 114 |
Author Key Words |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass | LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SIGE | 446591 | 4% | 36% | 459 | Search SIGE | Search SIGE |
2 | STRAINED SI | 330594 | 1% | 70% | 172 | Search STRAINED+SI | Search STRAINED+SI |
3 | GERMANIUM | 293771 | 5% | 17% | 625 | Search GERMANIUM | Search GERMANIUM |
4 | STRAINED SILICON | 182080 | 1% | 58% | 115 | Search STRAINED+SILICON | Search STRAINED+SILICON |
5 | GESN | 107754 | 0% | 90% | 44 | Search GESN | Search GESN |
6 | VIRTUAL SUBSTRATE | 106863 | 0% | 85% | 46 | Search VIRTUAL+SUBSTRATE | Search VIRTUAL+SUBSTRATE |
7 | SILICON GERMANIUM | 105566 | 1% | 29% | 136 | Search SILICON+GERMANIUM | Search SILICON+GERMANIUM |
8 | MOSFET | 72390 | 3% | 9% | 303 | Search MOSFET | Search MOSFET |
9 | GERMANIUM TIN | 71676 | 0% | 91% | 29 | Search GERMANIUM+TIN | Search GERMANIUM+TIN |
10 | GE | 69083 | 1% | 21% | 122 | Search GE | Search GE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 2 |