Class information for:
Level 1: GERMANIUM//MBE//GE MOS

Basic class information
Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
1 4 PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY 2188495
13 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 136516
893 2             SIGE//STRAINED SI//GERMANIUM 11547
8169 1                   GERMANIUM//MBE//GE MOS 1308

Terms with highest relevance score


rank Category termType chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 GERMANIUM authKW 579636 23% 8% 295
2 MBE address 296483 3% 31% 40
3 GE MOS authKW 295145 1% 88% 14
4 GERMANIUM GE authKW 281394 2% 40% 29
5 GEOI authKW 224601 1% 55% 17
6 GE MOSFET authKW 216838 1% 75% 12
7 NIGE authKW 214300 1% 68% 13
8 NI GERMANIDE authKW 195158 1% 90% 9
9 FERMI LEVEL UNPINNING authKW 131174 1% 78% 7
10 GE MIS authKW 120469 0% 100% 5

Web of Science journal categories


chi_square_rank Category chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 Physics, Applied 16137 70% 0% 914
2 Engineering, Electrical & Electronic 4100 34% 0% 444
3 Materials Science, Coatings & Films 2749 11% 0% 141
4 Nanoscience & Nanotechnology 1847 14% 0% 179
5 Physics, Condensed Matter 1255 18% 0% 233
6 Materials Science, Multidisciplinary 678 19% 0% 247
7 Optics 238 7% 0% 92
8 Electrochemistry 140 3% 0% 45
9 Chemistry, Physical 65 8% 0% 106
10 Physics, Multidisciplinary 1 2% 0% 29

Address terms


chi_square_rank term chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 MBE 296483 3% 31% 40
2 INFORMAT SYST ELECT ENGN 96375 0% 100% 4
3 ELECT TELECOMMUN PLICAT 96371 0% 67% 6
4 ELE OMACHINE ARCHITECTURE ENGN 72281 0% 100% 3
5 PAUL G ALLEN INTEGRATED SYST 64247 0% 67% 4
6 SILICON NANO DEVICE 60938 2% 9% 27
7 ELECT TELECOMS PLICAT 48188 0% 100% 2
8 NAZL MDM 40644 1% 19% 9
9 SEMICOND PHOTON 36685 1% 10% 16
10 AIR LIQUIDE KOREA CO 32124 0% 67% 2

Journals


chi_square_rank term chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 IEEE ELECTRON DEVICE LETTERS 33044 9% 1% 113
2 MICROELECTRONIC ENGINEERING 18346 7% 1% 89
3 IEEE TRANSACTIONS ON ELECTRON DEVICES 14931 8% 1% 99
4 APPLIED PHYSICS LETTERS 14732 20% 0% 262
5 APPLIED PHYSICS EXPRESS 5225 2% 1% 29
6 JAPANESE JOURNAL OF APPLIED PHYSICS 5013 5% 0% 59
7 ECS SOLID STATE LETTERS 4280 1% 2% 8
8 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2697 2% 1% 20
9 SOLID-STATE ELECTRONICS 1846 2% 0% 28
10 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 1585 0% 2% 4

Author Key Words


chi_square_rank term chi_square shrOfCwithTerm shrOfTermInClass termInClass LCSH search Wikipedia search
1 GERMANIUM 579636 23% 8% 295 Search GERMANIUM Search GERMANIUM
2 GE MOS 295145 1% 88% 14 Search GE+MOS Search GE+MOS
3 GERMANIUM GE 281394 2% 40% 29 Search GERMANIUM+GE Search GERMANIUM+GE
4 GEOI 224601 1% 55% 17 Search GEOI Search GEOI
5 GE MOSFET 216838 1% 75% 12 Search GE+MOSFET Search GE+MOSFET
6 NIGE 214300 1% 68% 13 Search NIGE Search NIGE
7 NI GERMANIDE 195158 1% 90% 9 Search NI+GERMANIDE Search NI+GERMANIDE
8 FERMI LEVEL UNPINNING 131174 1% 78% 7 Search FERMI+LEVEL+UNPINNING Search FERMI+LEVEL+UNPINNING
9 GE MIS 120469 0% 100% 5 Search GE+MIS Search GE+MIS
10 GERMANIUM OXYNITRIDE 120469 0% 100% 5 Search GERMANIUM+OXYNITRIDE Search GERMANIUM+OXYNITRIDE

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.

Classes with closest relation at Level 1


rank cluster_id2 link
1 15843 GERMANIUM//CNR IMM MATIS//ELECT MAT DEVICES NANOSTRUCT
2 6996 INGAAS//III V MOSFET//III V
3 7342 GESN//GERMANIUM TIN//GESN ALLOY
4 20907 SCHOTTKY BARRIER SB//DOPANT SEGREGATION DS//SCHOTTKY BARRIER MOSFET
5 116 HFO2//HIGH K DIELECTRICS//HIGH K
6 10645 NICKEL SILICIDE//NISI//NI SILICIDE
7 2006 STRAINED SI//STRAINED SILICON//SIGE
8 21959 SI001 SUBSTRATES//CRYSTALLINE OXIDE//S UNICAT
9 15246 PRASEODYMIUM OXIDE//DIELECTRIC PHENOMENA//ELECT MAT DEVICES
10 10256 ALUMINUM INDUCED CRYSTALLIZATION//LIQUID PHASE CRYSTALLIZATION//POLYCRYSTALLINE SILICON

Go to start page