Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
| 553 | 3 | BETA FESI2//SILICIDES//ERBIUM | 18376 |
| 685 | 2 | BETA FESI2//SILICIDES//SERIES RESISTANCE | 13508 |
| 20907 | 1 | SCHOTTKY BARRIER SB//DOPANT SEGREGATION DS//SCHOTTKY BARRIER MOSFET | 464 |
Terms with highest relevance score |
| rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|---|
| 1 | SCHOTTKY BARRIER SB | authKW | 1210247 | 6% | 64% | 28 |
| 2 | DOPANT SEGREGATION DS | authKW | 804347 | 3% | 79% | 15 |
| 3 | SCHOTTKY BARRIER MOSFET | authKW | 764128 | 3% | 75% | 15 |
| 4 | DOPANT SEGREGATION | authKW | 673811 | 5% | 40% | 25 |
| 5 | SCHOTTKY BARRIER SB MOSFET | authKW | 483007 | 2% | 89% | 8 |
| 6 | SCHOTTKY BARRIER | authKW | 354096 | 17% | 6% | 81 |
| 7 | SCHOTTKY BARRIER SB LOWERING | authKW | 339616 | 1% | 100% | 5 |
| 8 | SCHOTTKY SOURCE DRAIN MOSFET | authKW | 339616 | 1% | 100% | 5 |
| 9 | METAL SOURCE DRAIN | authKW | 283012 | 1% | 83% | 5 |
| 10 | ERBIUM SILICIDE | authKW | 271681 | 2% | 40% | 10 |
Web of Science journal categories |
| chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | Physics, Applied | 4522 | 63% | 0% | 290 |
| 2 | Engineering, Electrical & Electronic | 4140 | 55% | 0% | 256 |
| 3 | Physics, Condensed Matter | 501 | 19% | 0% | 87 |
| 4 | Nanoscience & Nanotechnology | 478 | 12% | 0% | 55 |
| 5 | Materials Science, Multidisciplinary | 117 | 14% | 0% | 67 |
| 6 | Materials Science, Coatings & Films | 49 | 3% | 0% | 13 |
| 7 | Physics, Multidisciplinary | 29 | 5% | 0% | 25 |
| 8 | Optics | 28 | 5% | 0% | 22 |
| 9 | Electrochemistry | 0 | 1% | 0% | 4 |
| 10 | Physics, Nuclear | 0 | 1% | 0% | 4 |
Address terms |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | ADV I MEMS TEAM | 217353 | 1% | 80% | 4 |
| 2 | TECHNOL FDN GRP | 135846 | 0% | 100% | 2 |
| 3 | COMPETENCE NANOTECHNOL PHOTON | 98792 | 1% | 36% | 4 |
| 4 | BIO NANOSYST IBNI | 90563 | 0% | 67% | 2 |
| 5 | U TERMINAL TEAM | 90563 | 0% | 67% | 2 |
| 6 | NANOELECT DEVICE TEAM | 87326 | 1% | 43% | 3 |
| 7 | SEMICOND BASIC | 77621 | 1% | 29% | 4 |
| 8 | SILICON NANO DEVICE | 68127 | 4% | 6% | 17 |
| 9 | BEIJING SEMICOND | 67923 | 0% | 100% | 1 |
| 10 | BIO NANSYSTIBN I | 67923 | 0% | 100% | 1 |
Journals |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | IEEE ELECTRON DEVICE LETTERS | 38995 | 16% | 1% | 73 |
| 2 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 22412 | 16% | 0% | 72 |
| 3 | SOLID-STATE ELECTRONICS | 7381 | 7% | 0% | 33 |
| 4 | MICROELECTRONIC ENGINEERING | 3147 | 5% | 0% | 22 |
| 5 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2333 | 2% | 0% | 8 |
| 6 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1611 | 3% | 0% | 14 |
| 7 | APPLIED PHYSICS LETTERS | 1180 | 10% | 0% | 45 |
| 8 | JAPANESE JOURNAL OF APPLIED PHYSICS | 1032 | 3% | 0% | 16 |
| 9 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 680 | 4% | 0% | 18 |
| 10 | SUPERLATTICES AND MICROSTRUCTURES | 644 | 2% | 0% | 8 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |