Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
13 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 136516 |
197 | 2 | IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FLASH MEMORY | 20765 |
10114 | 1 | TUNNEL FIELD EFFECT TRANSISTOR TFET//BAND TO BAND TUNNELING BTBT//TUNNEL FET | 1121 |
Terms with highest relevance score |
rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|---|
1 | TUNNEL FIELD EFFECT TRANSISTOR TFET | authKW | 2418991 | 8% | 98% | 88 |
2 | BAND TO BAND TUNNELING BTBT | authKW | 1979752 | 9% | 70% | 100 |
3 | TUNNEL FET | authKW | 1836700 | 7% | 78% | 84 |
4 | TUNNELING FIELD EFFECT TRANSISTOR TFET | authKW | 1637380 | 6% | 94% | 62 |
5 | BAND TO BAND TUNNELING | authKW | 1511446 | 9% | 55% | 97 |
6 | TUNNEL FET TFET | authKW | 1385437 | 5% | 93% | 53 |
7 | TFET | authKW | 1187768 | 5% | 81% | 52 |
8 | TUNNEL FIELD EFFECT TRANSISTOR | authKW | 1074051 | 4% | 93% | 41 |
9 | TUNNEL TRANSISTORS | authKW | 687427 | 3% | 68% | 36 |
10 | TUNNEL FIELD EFFECT TRANSISTORS TFETS | authKW | 618493 | 2% | 100% | 22 |
Web of Science journal categories |
chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 13379 | 63% | 0% | 710 |
2 | Physics, Applied | 12021 | 65% | 0% | 733 |
3 | Physics, Condensed Matter | 1105 | 18% | 0% | 202 |
4 | Nanoscience & Nanotechnology | 991 | 11% | 0% | 124 |
5 | Materials Science, Multidisciplinary | 159 | 12% | 0% | 133 |
6 | Computer Science, Hardware & Architecture | 12 | 1% | 0% | 10 |
7 | Materials Science, Coatings & Films | 2 | 1% | 0% | 9 |
8 | Physics, Multidisciplinary | -0 | 2% | 0% | 19 |
9 | Multidisciplinary Sciences | -0 | 0% | 0% | 2 |
10 | Chemistry, Multidisciplinary | -1 | 3% | 0% | 34 |
Address terms |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | NANOELECT VLSI | 378785 | 1% | 84% | 16 |
2 | NANOSCALE DEVICE CIRCUIT SYST DESIGN | 140567 | 0% | 100% | 5 |
3 | DEVICE SIMULAT | 119842 | 1% | 47% | 9 |
4 | NANOELECT DEVICES | 119824 | 2% | 24% | 18 |
5 | TD TEAM S LSI | 100402 | 0% | 71% | 5 |
6 | EXCELLENCE NANO TECHNOL | 89961 | 0% | 80% | 4 |
7 | ELECT COMMUN ENGN DISCIPLINE | 80309 | 1% | 29% | 10 |
8 | NANOELECT DEVICES NANO | 78218 | 1% | 35% | 8 |
9 | PETER GRUNBERG 9 | 64166 | 1% | 21% | 11 |
10 | DEPARMENT ELECT COMMUN ENGN | 56227 | 0% | 100% | 2 |
Journals |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 142249 | 3% | 14% | 35 |
2 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 108498 | 22% | 2% | 246 |
3 | IEEE ELECTRON DEVICE LETTERS | 51119 | 12% | 1% | 130 |
4 | SOLID-STATE ELECTRONICS | 18409 | 7% | 1% | 81 |
5 | JOURNAL OF COMPUTATIONAL ELECTRONICS | 17815 | 2% | 2% | 27 |
6 | SUPERLATTICES AND MICROSTRUCTURES | 11889 | 5% | 1% | 53 |
7 | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 11865 | 1% | 3% | 16 |
8 | JAPANESE JOURNAL OF APPLIED PHYSICS | 7360 | 6% | 0% | 66 |
9 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 6657 | 2% | 1% | 21 |
10 | ADVANCES IN NATURAL SCIENCES-NANOSCIENCE AND NANOTECHNOLOGY | 2236 | 0% | 2% | 5 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |