Class information for:
Level 1: INGAAS//III V MOSFET//III V

Basic class information
Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
1 4 PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY 2188495
51 3       SURFACE SCIENCE//PHYSICS, CONDENSED MATTER//SCANNING TUNNELING MICROSCOPY 97901
1092 2             GALLIUM ARSENIDE//GAAS//SURFACE SCIENCE 10114
6996 1                   INGAAS//III V MOSFET//III V 1444

Terms with highest relevance score


rank Category termType chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 INGAAS authKW 344336 8% 13% 119
2 III V MOSFET authKW 283059 1% 62% 21
3 III V authKW 228745 3% 21% 49
4 INGAAS MOSFET authKW 174587 1% 67% 12
5 GAAS MOSFET authKW 146700 1% 61% 11
6 GAAS MOS authKW 109122 0% 100% 5
7 III V SEMICONDUCTORS authKW 90032 7% 4% 107
8 BULK OXIDE TRAP authKW 87297 0% 100% 4
9 GALLIUM ARSENIDE authKW 83668 7% 4% 95
10 ATOMIC LAYER DEPOSITION authKW 77059 6% 4% 91

Web of Science journal categories


chi_square_rank Category chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 Physics, Applied 20275 74% 0% 1073
2 Engineering, Electrical & Electronic 4383 33% 0% 483
3 Nanoscience & Nanotechnology 3076 17% 0% 239
4 Materials Science, Coatings & Films 1263 7% 0% 103
5 Physics, Condensed Matter 800 14% 0% 204
6 Materials Science, Multidisciplinary 548 17% 0% 242
7 Optics 185 6% 0% 89
8 Chemistry, Physical 43 7% 0% 103
9 Electrochemistry 43 2% 0% 31
10 Crystallography 36 2% 0% 29

Address terms


chi_square_rank term chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 CSEA 69138 1% 21% 15
2 MICROWAVE DEVICE IC 48153 1% 28% 8
3 TSMC RD 43649 0% 100% 2
4 TYNDALL 38889 4% 4% 51
5 ELECT ENGN INFORMAT SYST 37846 2% 5% 36
6 WIDE BAND G SEMICOND MAT DEVICES CHIN 34914 0% 40% 4
7 INT SEMICOND TECHNOL 31418 0% 24% 6
8 ADV DEVICES SUSTAINABLE ENERGY ADSEL 29098 0% 67% 2
9 ELECT ECE 22081 1% 11% 9
10 ADV TECHNOL DEV ILITY 21824 0% 100% 1

Journals


chi_square_rank term chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 APPLIED PHYSICS LETTERS 25225 25% 0% 359
2 IEEE ELECTRON DEVICE LETTERS 24351 7% 1% 102
3 MICROELECTRONIC ENGINEERING 15859 6% 1% 87
4 IEEE TRANSACTIONS ON ELECTRON DEVICES 10409 6% 1% 87
5 APPLIED PHYSICS EXPRESS 8576 3% 1% 39
6 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 5741 5% 0% 67
7 SOLID-STATE ELECTRONICS 4360 3% 0% 45
8 ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 3304 1% 1% 15
9 JOURNAL OF APPLIED PHYSICS 2185 7% 0% 107
10 ELECTROCHEMICAL AND SOLID STATE LETTERS 2009 1% 0% 20

Author Key Words


chi_square_rank term chi_square shrOfCwithTerm shrOfTermInClass termInClass LCSH search Wikipedia search
1 INGAAS 344336 8% 13% 119 Search INGAAS Search INGAAS
2 III V MOSFET 283059 1% 62% 21 Search III+V+MOSFET Search III+V+MOSFET
3 III V 228745 3% 21% 49 Search III+V Search III+V
4 INGAAS MOSFET 174587 1% 67% 12 Search INGAAS+MOSFET Search INGAAS+MOSFET
5 GAAS MOSFET 146700 1% 61% 11 Search GAAS+MOSFET Search GAAS+MOSFET
6 GAAS MOS 109122 0% 100% 5 Search GAAS+MOS Search GAAS+MOS
7 III V SEMICONDUCTORS 90032 7% 4% 107 Search III+V+SEMICONDUCTORS Search III+V+SEMICONDUCTORS
8 BULK OXIDE TRAP 87297 0% 100% 4 Search BULK+OXIDE+TRAP Search BULK+OXIDE+TRAP
9 GALLIUM ARSENIDE 83668 7% 4% 95 Search GALLIUM+ARSENIDE Search GALLIUM+ARSENIDE
10 ATOMIC LAYER DEPOSITION 77059 6% 4% 91 Search ATOMIC+LAYER+DEPOSITION Search ATOMIC+LAYER+DEPOSITION

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.

Classes with closest relation at Level 1


rank cluster_id2 link
1 8343 SULFUR PASSIVATION//INTERFACE CONTROL LAYER//NH42S X TREATMENT
2 8169 GERMANIUM//MBE//GE MOS
3 19102 ECR HYDROGEN PLASMA//IN SITU VACUUM PROCESS//OXIDE DESORPTION
4 13569 CONDUCTANCE TRANSIENTS//INDIUM PHOSPHIDE100//INSULATOR DAMAGE
5 7073 NETWORK COMPUTAT NANOTECHNOL//BALLISTIC TRANSPORT//QUASI BALLISTIC TRANSPORT
6 116 HFO2//HIGH K DIELECTRICS//HIGH K
7 29922 METAL IONIC CONDUCTOR INTERFACE//ADV DEVICE TECHNLOL//BANDGAP CORRECTION
8 9390 ELECTRON COUNTING MODEL//INDIUM ARSENIDE//GA ADATOM
9 15246 PRASEODYMIUM OXIDE//DIELECTRIC PHENOMENA//ELECT MAT DEVICES
10 10114 TUNNEL FIELD EFFECT TRANSISTOR TFET//BAND TO BAND TUNNELING BTBT//TUNNEL FET

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