Class information for:
Level 2: IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FLASH MEMORY

Basic class information
Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
1 4 PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY 2188495
13 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 136516
197 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FLASH MEMORY 20765
432 1                   FINFET//SHORT CHANNEL EFFECTS//DOUBLE GATE MOSFET 3487
1776 1                   IEEE TRANSACTIONS ON NUCLEAR SCIENCE//TOTAL IONIZING DOSE//OXIDE TRAPPED CHARGE 2524
2590 1                   SONOS//FLASH MEMORY//NANOCRYSTAL MEMORY 2231
3071 1                   STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//OXIDE BREAKDOWN 2101
4663 1                   HOT CARRIERS//HOT CARRIER DEGRADATION//HOT CARRIER EFFECT 1771
7073 1                   NETWORK COMPUTAT NANOTECHNOL//BALLISTIC TRANSPORT//QUASI BALLISTIC TRANSPORT 1436
9421 1                   EFFECTIVE CHANNEL LENGTH//LOW TEMPERATURE ELECTRONICS//CRYOGENIC CMOS 1190
10114 1                   TUNNEL FIELD EFFECT TRANSISTOR TFET//BAND TO BAND TUNNELING BTBT//TUNNEL FET 1121
12310 1                   DIRECT TUNNELING//QUANTUM MECHANICAL EFFECTS//ULTRATHIN GATE OXIDE 945
12845 1                   NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//NBTI 907
13210 1                   CHARGE PUMP//SWITCHED CAPACITOR CONVERTER//CHARGE PUMP CIRCUIT 883
19176 1                   NAND FLASH MEMORY//FLASH MEMORY//NAND FLASH 541
20526 1                   SINGLE EVENT BURNOUT SEB//SINGLE EVENT BURNOUT//SINGLE EVENT GATE RUPTURE SEGR 480
20817 1                   1T DRAM//CAPACITORLESS DRAM//CAPACITORLESS 1T DRAM 468
25310 1                   DEVICE TECHNOL MODELING//NARROW CHANNEL TRANSISTOR//NOISE ADAPTABILITY 308
31010 1                   ANTIFUSE//LOGIC NONVOLATILE MEMORY NVM//MULTITIME PROGRAMMABLE MTP 174
33621 1                   DEUTERIUM ANNEALING//SID4//ADSORPTION HYDROGEN PASSIVATION 136
38433 1                   VERTICAL MOSFET//BACK BIAS EFFECT//1R READ 1W WRITE 8T TRANSISTOR STATIC RANDOM 62

Terms with highest relevance score


rank Category termType chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 IEEE TRANSACTIONS ON ELECTRON DEVICES journal 877210 15% 19% 3014
2 MOSFET authKW 609095 6% 34% 1176
3 FLASH MEMORY authKW 432660 2% 57% 500
4 SOLID-STATE ELECTRONICS journal 425879 8% 17% 1676
5 IEEE ELECTRON DEVICE LETTERS journal 400899 8% 17% 1569
6 FINFET authKW 316075 2% 51% 412
7 ENGINEERING, ELECTRICAL & ELECTRONIC WoSSC 263195 65% 1% 13534
8 SHORT CHANNEL EFFECTS authKW 209918 1% 57% 245
9 DOUBLE GATE MOSFET authKW 203950 1% 83% 162
10 SONOS authKW 201065 1% 93% 142

Web of Science journal categories


chi_square_rank Category chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 Engineering, Electrical & Electronic 263195 65% 1% 13534
2 Physics, Applied 169661 58% 1% 11946
3 Nanoscience & Nanotechnology 26526 13% 1% 2714
4 Physics, Condensed Matter 17385 17% 0% 3489
5 Nuclear Science & Technology 10635 7% 1% 1509
6 Computer Science, Hardware & Architecture 2845 2% 1% 494
7 Materials Science, Coatings & Films 1165 2% 0% 453
8 Materials Science, Multidisciplinary 1143 9% 0% 1862
9 Optics 435 3% 0% 717
10 Physics, Multidisciplinary 328 4% 0% 759

Address terms


chi_square_rank term chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 MICROELECT 119608 6% 7% 1197
2 ELECT ENGN 66676 16% 1% 3358
3 NETWORK COMPUTAT NANOTECHNOL 49864 0% 40% 82
4 RREACT GRP 47160 0% 94% 33
5 IMEP LAHC 45968 1% 27% 114
6 ELECT TECNOL COMP 40988 0% 33% 81
7 NANO DEVICE SIMULAT 40248 0% 80% 33
8 ADV LSI TECHNOL 37296 0% 33% 75
9 DEEN DAYAL UPADHYAYA 36502 0% 43% 56
10 LPCS 30406 0% 34% 60

Journals


chi_square_rank term chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 IEEE TRANSACTIONS ON ELECTRON DEVICES 877210 15% 19% 3014
2 SOLID-STATE ELECTRONICS 425879 8% 17% 1676
3 IEEE ELECTRON DEVICE LETTERS 400899 8% 17% 1569
4 MICROELECTRONICS RELIABILITY 189449 5% 13% 962
5 IEEE TRANSACTIONS ON NUCLEAR SCIENCE 146410 6% 8% 1283
6 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 84422 1% 22% 251
7 JOURNAL OF COMPUTATIONAL ELECTRONICS 73230 1% 21% 236
8 MICROELECTRONIC ENGINEERING 62852 3% 6% 660
9 IEEE TRANSACTIONS ON NANOTECHNOLOGY 34723 1% 11% 207
10 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 26369 0% 27% 65

Author Key Words


chi_square_rank term chi_square shrOfCwithTerm shrOfTermInClass termInClass LCSH search Wikipedia search
1 MOSFET 609095 6% 34% 1176 Search MOSFET Search MOSFET
2 FLASH MEMORY 432660 2% 57% 500 Search FLASH+MEMORY Search FLASH+MEMORY
3 FINFET 316075 2% 51% 412 Search FINFET Search FINFET
4 SHORT CHANNEL EFFECTS 209918 1% 57% 245 Search SHORT+CHANNEL+EFFECTS Search SHORT+CHANNEL+EFFECTS
5 DOUBLE GATE MOSFET 203950 1% 83% 162 Search DOUBLE+GATE+MOSFET Search DOUBLE+GATE+MOSFET
6 SONOS 201065 1% 93% 142 Search SONOS Search SONOS
7 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI 196533 1% 72% 179 Search NEGATIVE+BIAS+TEMPERATURE+INSTABILITY+NBTI Search NEGATIVE+BIAS+TEMPERATURE+INSTABILITY+NBTI
8 THRESHOLD VOLTAGE 175138 2% 36% 325 Search THRESHOLD+VOLTAGE Search THRESHOLD+VOLTAGE
9 BAND TO BAND TUNNELING BTBT 169443 1% 89% 126 Search BAND+TO+BAND+TUNNELING+BTBT Search BAND+TO+BAND+TUNNELING+BTBT
10 BAND TO BAND TUNNELING 157799 1% 77% 135 Search BAND+TO+BAND+TUNNELING Search BAND+TO+BAND+TUNNELING

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.

Classes with closest relation at Level 2


rank cluster_id2 link
1 1628 HFO2//HIGH K DIELECTRICS//HIGH K
2 1116 SILICON OXYNITRIDE//BORON PENETRATION//SILICON NITRIDE
3 1108 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS//COMPUTER SCIENCE, HARDWARE & ARCHITECTURE//PROCESS VARIATION
4 2120 AVALANCHE PHOTODIODE//IMPACT IONIZATION//EXCESS NOISE FACTOR
5 893 SIGE//STRAINED SI//GERMANIUM
6 1718 IGBT//LDMOS//POWER MOSFET
7 1594 POLYCRYSTALLINE SILICON//POLY SI//THIN FILM TRANSISTORS
8 1481 TRANSIENT ENHANCED DIFFUSION//NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS//ION IMPLANTATION
9 1381 SELF ORGANIZED CRITICALITY//LOW FREQUENCY NOISE//PENNA MODEL
10 1398 RESISTIVE SWITCHING//MEMRISTOR//RRAM

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