Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
13 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 136516 |
197 | 2 | IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FLASH MEMORY | 20765 |
2590 | 1 | SONOS//FLASH MEMORY//NANOCRYSTAL MEMORY | 2231 |
Terms with highest relevance score |
rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|---|
1 | SONOS | authKW | 1338105 | 5% | 79% | 120 |
2 | FLASH MEMORY | authKW | 477293 | 8% | 20% | 172 |
3 | NANOCRYSTAL MEMORY | authKW | 432569 | 2% | 88% | 35 |
4 | NROM | authKW | 353124 | 1% | 100% | 25 |
5 | NONVOLATILE MEMORY | authKW | 351383 | 6% | 18% | 137 |
6 | NANO FLOATING GATE MEMORY | authKW | 290564 | 1% | 86% | 24 |
7 | CHARGE TRAPPING MEMORY | authKW | 288789 | 1% | 66% | 31 |
8 | CHARGE TRAPPING LAYER | authKW | 245646 | 1% | 87% | 20 |
9 | MONOS | authKW | 198970 | 1% | 78% | 18 |
10 | SILICON OXIDE NITRIDE OXIDE SILICON SONOS | authKW | 188746 | 1% | 64% | 21 |
Web of Science journal categories |
chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | Physics, Applied | 28351 | 71% | 0% | 1581 |
2 | Engineering, Electrical & Electronic | 9233 | 39% | 0% | 860 |
3 | Nanoscience & Nanotechnology | 6806 | 20% | 0% | 437 |
4 | Physics, Condensed Matter | 2706 | 20% | 0% | 440 |
5 | Materials Science, Multidisciplinary | 2022 | 24% | 0% | 527 |
6 | Materials Science, Coatings & Films | 1526 | 6% | 0% | 142 |
7 | Optics | 210 | 6% | 0% | 123 |
8 | Physics, Multidisciplinary | 166 | 6% | 0% | 127 |
9 | Electrochemistry | 35 | 2% | 0% | 39 |
10 | Materials Science, Ceramics | 2 | 1% | 0% | 13 |
Address terms |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | QUANTUM FUNCT SPIN | 136679 | 1% | 35% | 28 |
2 | EMERGING CENT | 89291 | 1% | 45% | 14 |
3 | NMAT GRP | 77543 | 1% | 31% | 18 |
4 | THIN FILM NANO MICROELECT | 43382 | 1% | 24% | 13 |
5 | NANOFABRICAT NOVEL DEVICES INTEGRATED TECHN | 41065 | 1% | 18% | 16 |
6 | QUANTUM STRUCT | 37640 | 1% | 17% | 16 |
7 | OPTOELECT INFORMAT MAT HEBEI PROV | 32282 | 0% | 57% | 4 |
8 | PATTERNING FABRICAT GRP | 32282 | 0% | 57% | 4 |
9 | LETIDTSGRE | 28250 | 0% | 100% | 2 |
10 | METROL NANO SCI | 28250 | 0% | 100% | 2 |
Journals |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | IEEE ELECTRON DEVICE LETTERS | 38301 | 7% | 2% | 159 |
2 | SOLID-STATE ELECTRONICS | 22686 | 6% | 1% | 127 |
3 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 22276 | 7% | 1% | 158 |
4 | MICROELECTRONIC ENGINEERING | 18855 | 5% | 1% | 118 |
5 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 16765 | 2% | 3% | 47 |
6 | APPLIED PHYSICS LETTERS | 11515 | 14% | 0% | 305 |
7 | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 6591 | 1% | 2% | 23 |
8 | JAPANESE JOURNAL OF APPLIED PHYSICS | 6220 | 4% | 1% | 86 |
9 | ELECTROCHEMICAL AND SOLID STATE LETTERS | 4464 | 2% | 1% | 37 |
10 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 3380 | 3% | 0% | 64 |
Author Key Words |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass | LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SONOS | 1338105 | 5% | 79% | 120 | Search SONOS | Search SONOS |
2 | FLASH MEMORY | 477293 | 8% | 20% | 172 | Search FLASH+MEMORY | Search FLASH+MEMORY |
3 | NANOCRYSTAL MEMORY | 432569 | 2% | 88% | 35 | Search NANOCRYSTAL+MEMORY | Search NANOCRYSTAL+MEMORY |
4 | NROM | 353124 | 1% | 100% | 25 | Search NROM | Search NROM |
5 | NONVOLATILE MEMORY | 351383 | 6% | 18% | 137 | Search NONVOLATILE+MEMORY | Search NONVOLATILE+MEMORY |
6 | NANO FLOATING GATE MEMORY | 290564 | 1% | 86% | 24 | Search NANO+FLOATING+GATE+MEMORY | Search NANO+FLOATING+GATE+MEMORY |
7 | CHARGE TRAPPING MEMORY | 288789 | 1% | 66% | 31 | Search CHARGE+TRAPPING+MEMORY | Search CHARGE+TRAPPING+MEMORY |
8 | CHARGE TRAPPING LAYER | 245646 | 1% | 87% | 20 | Search CHARGE+TRAPPING+LAYER | Search CHARGE+TRAPPING+LAYER |
9 | MONOS | 198970 | 1% | 78% | 18 | Search MONOS | Search MONOS |
10 | SILICON OXIDE NITRIDE OXIDE SILICON SONOS | 188746 | 1% | 64% | 21 | Search SILICON+OXIDE+NITRIDE+OXIDE+SILICON+SONOS | Search SILICON+OXIDE+NITRIDE+OXIDE+SILICON+SONOS |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |