Class information for:
Level 1: STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//OXIDE BREAKDOWN

Basic class information
Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
1 4 PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY 2188495
13 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 136516
197 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FLASH MEMORY 20765
3071 1                   STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//OXIDE BREAKDOWN 2101

Terms with highest relevance score


rank Category termType chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 STRESS INDUCED LEAKAGE CURRENT authKW 430425 2% 74% 39
2 OXIDE RELIABILITY authKW 387869 2% 63% 41
3 OXIDE BREAKDOWN authKW 365379 2% 59% 41
4 SOFT BREAKDOWN authKW 361208 2% 71% 34
5 DIELECTRIC BREAKDOWN authKW 291478 5% 19% 105
6 TIME DEPENDENT DIELECTRIC BREAKDOWN TDDB authKW 259202 2% 44% 39
7 HARD BREAKDOWN authKW 242982 1% 90% 18
8 MOS DEVICES authKW 190199 3% 20% 65
9 STRESS INDUCED LEAKAGE CURRENT SILC authKW 172466 1% 50% 23
10 MICROELECTRONICS RELIABILITY journal 160815 13% 4% 281

Web of Science journal categories


chi_square_rank Category chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 Physics, Applied 28939 74% 0% 1547
2 Engineering, Electrical & Electronic 20062 57% 0% 1197
3 Nanoscience & Nanotechnology 9463 24% 0% 495
4 Physics, Condensed Matter 1447 15% 0% 325
5 Materials Science, Coatings & Films 775 5% 0% 101
6 Optics 377 7% 0% 147
7 Materials Science, Ceramics 208 2% 0% 49
8 Materials Science, Multidisciplinary 124 9% 0% 192
9 Electrochemistry 62 2% 0% 45
10 Computer Science, Hardware & Architecture 41 1% 0% 23

Address terms


chi_square_rank term chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 ZI ROUSSET 83059 1% 46% 12
2 AUTOMAT MICROELECT 63510 1% 35% 12
3 ENG ELECT 41529 0% 46% 6
4 PHYS COMPOSANTS SEMICOND 36716 1% 19% 13
5 ETUD MICROELECT MAT 33746 0% 75% 3
6 L2MP POLYTECH 33746 0% 75% 3
7 SEMICOND DEVICE RELIABIL 33746 0% 75% 3
8 CATANIA TECHNOL 31242 0% 42% 5
9 RM MON 29998 0% 100% 2
10 TECHNOL CHARACTERISAT MODELLING GRP 29998 0% 100% 2

Journals


chi_square_rank term chi_square shrOfCwithTerm shrOfTermInClass termInClass
1 MICROELECTRONICS RELIABILITY 160815 13% 4% 281
2 IEEE TRANSACTIONS ON ELECTRON DEVICES 47341 11% 1% 223
3 SOLID-STATE ELECTRONICS 33231 7% 2% 149
4 MICROELECTRONIC ENGINEERING 30742 7% 1% 146
5 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 30599 2% 4% 48
6 IEEE ELECTRON DEVICE LETTERS 23900 6% 1% 122
7 JOURNAL OF APPLIED PHYSICS 8144 12% 0% 245
8 APPLIED PHYSICS LETTERS 3443 8% 0% 165
9 SOVIET MICROELECTRONICS 2444 0% 2% 7
10 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 1946 2% 0% 33

Author Key Words


chi_square_rank term chi_square shrOfCwithTerm shrOfTermInClass termInClass LCSH search Wikipedia search
1 STRESS INDUCED LEAKAGE CURRENT 430425 2% 74% 39 Search STRESS+INDUCED+LEAKAGE+CURRENT Search STRESS+INDUCED+LEAKAGE+CURRENT
2 OXIDE RELIABILITY 387869 2% 63% 41 Search OXIDE+RELIABILITY Search OXIDE+RELIABILITY
3 OXIDE BREAKDOWN 365379 2% 59% 41 Search OXIDE+BREAKDOWN Search OXIDE+BREAKDOWN
4 SOFT BREAKDOWN 361208 2% 71% 34 Search SOFT+BREAKDOWN Search SOFT+BREAKDOWN
5 DIELECTRIC BREAKDOWN 291478 5% 19% 105 Search DIELECTRIC+BREAKDOWN Search DIELECTRIC+BREAKDOWN
6 TIME DEPENDENT DIELECTRIC BREAKDOWN TDDB 259202 2% 44% 39 Search TIME+DEPENDENT+DIELECTRIC+BREAKDOWN+TDDB Search TIME+DEPENDENT+DIELECTRIC+BREAKDOWN+TDDB
7 HARD BREAKDOWN 242982 1% 90% 18 Search HARD+BREAKDOWN Search HARD+BREAKDOWN
8 MOS DEVICES 190199 3% 20% 65 Search MOS+DEVICES Search MOS+DEVICES
9 STRESS INDUCED LEAKAGE CURRENT SILC 172466 1% 50% 23 Search STRESS+INDUCED+LEAKAGE+CURRENT+SILC Search STRESS+INDUCED+LEAKAGE+CURRENT+SILC
10 DIELECTRIC BREAKDOWN BD 149991 0% 100% 10 Search DIELECTRIC+BREAKDOWN+BD Search DIELECTRIC+BREAKDOWN+BD

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.

Classes with closest relation at Level 1


rank cluster_id2 link
1 12310 DIRECT TUNNELING//QUANTUM MECHANICAL EFFECTS//ULTRATHIN GATE OXIDE
2 12845 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//NBTI
3 4663 HOT CARRIERS//HOT CARRIER DEGRADATION//HOT CARRIER EFFECT
4 5396 BORON PENETRATION//NITRIDED OXIDE//SI OXYNITRIDE
5 33621 DEUTERIUM ANNEALING//SID4//ADSORPTION HYDROGEN PASSIVATION
6 31010 ANTIFUSE//LOGIC NONVOLATILE MEMORY NVM//MULTITIME PROGRAMMABLE MTP
7 20526 SINGLE EVENT BURNOUT SEB//SINGLE EVENT BURNOUT//SINGLE EVENT GATE RUPTURE SEGR
8 19176 NAND FLASH MEMORY//FLASH MEMORY//NAND FLASH
9 1776 IEEE TRANSACTIONS ON NUCLEAR SCIENCE//TOTAL IONIZING DOSE//OXIDE TRAPPED CHARGE
10 20412 POLYOXIDE//INTER POLY DIELECTRIC IPD//INTERPOLY DIELECTRIC

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