KTH receives new funding for 500 °C operation of electronics
Silicon Carbide (SiC) Electronics for Extreme Conditions.
The Knut and Alice Wallenberg Foundation granted the project WOV – Working on Venus almost 23 MSEK for 5 years. We will demonstrate for the first time all the electronics needed for working on Venus. The surface temperature of 460 °C is extremely challenging, and the electronics of earlier landers on Venus in the seventies failed after a few hours. Basic scientific investigation of the atmosphere of Venus and seismic activities over time would be useful for climate modeling and planetary understanding. Imaging could answer the question of whether there is or has been life on Venus.
Principal investigator: Prof. Mikael Östling, KTH ICT
Co-investigators:
Adj. Prof. Christer Fuglesang, KTH SCI
Prof. Carl-Mikael Zetterling, Prof. Ana Rusu, Assoc. Prof. Gunnar Malm, KTH ICT
Prof. Hans-Peter Nee, Prof. Frank Niklaus, KTH EES
Prof. Anita Lloyd Spetz, LiU
Article in TechWorld nr 3, 2014 (in Swedish)
Read more about the high temperature work on our HOTSiC project site or in the references below:
Silicon Carbide High Temperature Electronics – Is This Rocket Science?
Zetterling, C.-M.
Future Trends in Microelectronics: Frontiers and Innovations, ch. 7, p. 102
Edited by Luiryi, S., Xu, J. and Zaslavsky, A., John Wiley & Sons, 2013.
Capacitive inertial sensing at high temperatures of up to 400 °C
Mikhail Asiatici, Andreas C. Fischer, Henrik Rödjegård, Sjoerd Haasl, Göran Stemme, Frank Niklaus
Sensors and Actuators A: Physical, Volume 238, Pages 361–368, February 2016
550 °C 4H-SiC p-i-n Photodiode Array With Two-Layer Metallization
Hou, S., Hellström, P.-E., Zetterling, C.-M., and Östling, M.
IEEE Electron Device Letters, vol. 37, p. 1594, 2016.
A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC
Elahipanah, H., Asadollahi, A., Ekström, M., Salemi, A., Zetterling, C.-M., and Östling, M.
J. Solid State Science and Technology, vol 6, p. 197, 2017.
Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide
Ekström, M., Khartsev, S., Östling, M. and Zetterling, C.-M., J. Electronic Materials, 2017.
4H-SiC PIN Diode as High Temperature Multifunction Sensor
Hou, S., Hellström, P.-E., Zetterling, C.-M., and Östling, M., Materials Science Forum, 897, p. 630, 2017.
Venus Long-life Surface Package
C. Wilson, C.-M. Zetterling, W. T. Pike, arXiv:1611.03365v1
An Intermediate Frequency Amplifier for High-Temperature Applications
Muhammad Waqar Hussain; Hossein Elahipanah; Stephan Schröder; Saul Rodriguez; Bengt Gunnar Malm; Mikael Östling; Ana Rusu, IEEE Transactions on Electron Devices, 65, pp. 1411 – 1418, 2018
A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology
Muhammad Waqar Hussain; Hossein Elahipanah; John E. Zumbro; Stephan Schröder; Saul Rodriguez; Bengt Gunnar Malm; Homer Alan Mantooth; Ana Rusu, IEEE Electron Device Letters, 39, pp. 855 – 858, 2018