Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
| 51 | 3 | SURFACE SCIENCE//PHYSICS, CONDENSED MATTER//SCANNING TUNNELING MICROSCOPY | 97901 |
| 2522 | 2 | ALKALI HALIDES//CAF2//ELECTRON STIMULATED DESORPTION ESD | 4058 |
| 13690 | 1 | CAF2//METAL INSULATOR HETEROSTRUCTURE//SOLID STATE OPT | 850 |
Terms with highest relevance score |
| rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|---|
| 1 | CAF2 | authKW | 443902 | 7% | 19% | 62 |
| 2 | METAL INSULATOR HETEROSTRUCTURE | authKW | 370771 | 1% | 100% | 10 |
| 3 | SOLID STATE OPT | address | 195047 | 1% | 48% | 11 |
| 4 | CDF2 | authKW | 161194 | 1% | 43% | 10 |
| 5 | SEMICOND DEVICES ELECT MAT | address | 120118 | 1% | 36% | 9 |
| 6 | CAF2 SI111 | authKW | 111231 | 0% | 100% | 3 |
| 7 | METAL INSULATOR SEMICONDUCTOR HETEROSTRUCTURE | authKW | 111231 | 0% | 100% | 3 |
| 8 | PARTIALLY IONIZED BEAM EPITAXY | authKW | 111231 | 0% | 100% | 3 |
| 9 | CALCIUM DIFLUORIDE | authKW | 84744 | 0% | 57% | 4 |
| 10 | ROTATIONAL TWIN | authKW | 83422 | 0% | 75% | 3 |
Web of Science journal categories |
| chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | Physics, Applied | 8143 | 62% | 0% | 527 |
| 2 | Materials Science, Coatings & Films | 4377 | 17% | 0% | 141 |
| 3 | Physics, Condensed Matter | 3891 | 36% | 0% | 306 |
| 4 | Materials Science, Multidisciplinary | 488 | 20% | 0% | 167 |
| 5 | Crystallography | 427 | 7% | 0% | 56 |
| 6 | Chemistry, Physical | 220 | 14% | 0% | 116 |
| 7 | Engineering, Electrical & Electronic | 86 | 9% | 0% | 73 |
| 8 | Nanoscience & Nanotechnology | 85 | 4% | 0% | 38 |
| 9 | Physics, Multidisciplinary | 83 | 6% | 0% | 53 |
| 10 | Nuclear Science & Technology | 18 | 2% | 0% | 18 |
Address terms |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | SOLID STATE OPT | 195047 | 1% | 48% | 11 |
| 2 | SEMICOND DEVICES ELECT MAT | 120118 | 1% | 36% | 9 |
| 3 | MUSASHINO ELECT COMMUN MUSASHINO S | 74154 | 0% | 100% | 2 |
| 4 | ADV PL ELECT | 38614 | 1% | 21% | 5 |
| 5 | CEA CNRS GRP MICROSTRUCT SEMICOND 2 6 | 37077 | 0% | 100% | 1 |
| 6 | CS FIS MATEMAT B | 37077 | 0% | 100% | 1 |
| 7 | ETH QUANTUM ELECT PHYS | 37077 | 0% | 100% | 1 |
| 8 | INTERDISCIPLINARY ENGN SCI ENGN | 37077 | 0% | 100% | 1 |
| 9 | LEHRSTUHL HALBLEITERTECHNOL E26 | 37077 | 0% | 100% | 1 |
| 10 | MACDIARMAID ADV MAT NANOTECHNOL | 37077 | 0% | 100% | 1 |
Journals |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 3921 | 4% | 0% | 36 |
| 2 | SURFACE SCIENCE | 3789 | 6% | 0% | 53 |
| 3 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2957 | 4% | 0% | 34 |
| 4 | APPLIED SURFACE SCIENCE | 2678 | 6% | 0% | 52 |
| 5 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2460 | 5% | 0% | 46 |
| 6 | THIN SOLID FILMS | 2172 | 6% | 0% | 47 |
| 7 | JOURNAL OF CRYSTAL GROWTH | 2019 | 5% | 0% | 42 |
| 8 | APPLIED PHYSICS LETTERS | 1826 | 9% | 0% | 76 |
| 9 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1451 | 3% | 0% | 26 |
| 10 | JOURNAL OF APPLIED PHYSICS | 1330 | 8% | 0% | 64 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |