Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
| 215 | 3 | JOURNAL OF CRYSTAL GROWTH//HGCDTE//SOVIET PHYSICS SEMICONDUCTORS-USSR | 51359 |
| 222 | 2 | JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//GAAS | 20254 |
| 22023 | 1 | MICROCHANNEL EPITAXY//ELECTROEPITAXY//LIQUID PHASE ELECTROEPITAXY | 419 |
Terms with highest relevance score |
| rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|---|
| 1 | MICROCHANNEL EPITAXY | authKW | 847455 | 3% | 87% | 13 |
| 2 | ELECTROEPITAXY | authKW | 676964 | 2% | 100% | 9 |
| 3 | LIQUID PHASE ELECTROEPITAXY | authKW | 609266 | 2% | 90% | 9 |
| 4 | LIQUID PHASE EPITAXY | authKW | 426546 | 15% | 9% | 61 |
| 5 | INGAAS BRIDGE LAYER | authKW | 300873 | 1% | 100% | 4 |
| 6 | EPITAXIAL LATERAL OVERGROWTH | authKW | 295120 | 5% | 21% | 19 |
| 7 | COMPOSITIONAL CONVERSION | authKW | 225655 | 1% | 100% | 3 |
| 8 | LOW ANGLE INCIDENCE MICROCHANNEL EPITAXY | authKW | 225655 | 1% | 100% | 3 |
| 9 | INTERFACE SUPERSATURATION | authKW | 169240 | 1% | 75% | 3 |
| 10 | LATTICE MISMATCHED EPITAXIAL STRUCTURES | authKW | 150436 | 0% | 100% | 2 |
Web of Science journal categories |
| chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | Crystallography | 11696 | 45% | 0% | 187 |
| 2 | Physics, Applied | 5441 | 72% | 0% | 300 |
| 3 | Materials Science, Multidisciplinary | 2253 | 52% | 0% | 216 |
| 4 | Materials Science, Coatings & Films | 105 | 4% | 0% | 17 |
| 5 | Physics, Condensed Matter | 46 | 8% | 0% | 32 |
| 6 | Engineering, Electrical & Electronic | 21 | 7% | 0% | 29 |
| 7 | Mechanics | 11 | 3% | 0% | 12 |
| 8 | Physics, Multidisciplinary | 10 | 4% | 0% | 17 |
| 9 | Materials Science, Characterization, Testing | 8 | 1% | 0% | 3 |
| 10 | Thermodynamics | 7 | 2% | 0% | 7 |
Address terms |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | ADV MAT RELATED TECHNOL | 117522 | 1% | 31% | 5 |
| 2 | CENTURY PROGRAM NANO TORY 21ST | 75218 | 0% | 100% | 1 |
| 3 | CME GHI | 75218 | 0% | 100% | 1 |
| 4 | COMP SIMULAT TECHNOL | 75218 | 0% | 100% | 1 |
| 5 | R HUT | 75218 | 0% | 100% | 1 |
| 6 | REL TECH MECH ENGN | 75218 | 0% | 100% | 1 |
| 7 | ADV DEVICES SENSOR SYST DEV | 37608 | 0% | 50% | 1 |
| 8 | SIB DEP | 37608 | 0% | 50% | 1 |
| 9 | INTERDISCIPLINARY MAT MODELLING | 28647 | 1% | 10% | 4 |
| 10 | SYNCHROTRON STRAHLUNG | 25071 | 0% | 33% | 1 |
Journals |
| chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
|---|---|---|---|---|---|
| 1 | JOURNAL OF CRYSTAL GROWTH | 62334 | 38% | 1% | 161 |
| 2 | ZHURNAL TEKHNICHESKOI FIZIKI | 5962 | 5% | 0% | 22 |
| 3 | CRYSTAL RESEARCH AND TECHNOLOGY | 3685 | 4% | 0% | 18 |
| 4 | JOURNAL OF ELECTRONIC MATERIALS | 868 | 3% | 0% | 11 |
| 5 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 671 | 0% | 0% | 2 |
| 6 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 641 | 2% | 0% | 8 |
| 7 | ACTA PHYSICA POLONICA A | 607 | 2% | 0% | 10 |
| 8 | FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS | 517 | 0% | 1% | 1 |
| 9 | PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 462 | 0% | 0% | 2 |
| 10 | JOURNAL OF APPLIED PHYSICS | 368 | 6% | 0% | 24 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |