Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
596 | 3 | RESISTIVE SWITCHING//MEMRISTOR//RRAM | 14780 |
1398 | 2 | RESISTIVE SWITCHING//MEMRISTOR//RRAM | 8299 |
2016 | 2 | FIELD EMISSION//ATOM PROBE TOMOGRAPHY//ATOM PROBE | 5881 |
4165 | 2 | ULTRASONIC EMISSION//NANOCRYSTALLINE POROUS SILICON//THERMOACOUSTIC EFFECT | 600 |
Terms with highest relevance score |
rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|---|
1 | RESISTIVE SWITCHING | authKW | 1425811 | 5% | 86% | 774 |
2 | MEMRISTOR | authKW | 1026208 | 4% | 73% | 660 |
3 | RRAM | authKW | 625698 | 2% | 91% | 322 |
4 | RESISTIVE RANDOM ACCESS MEMORY RRAM | authKW | 358638 | 1% | 96% | 176 |
5 | RERAM | authKW | 307590 | 1% | 89% | 163 |
6 | QUANTUM DOT CELLULAR AUTOMATA | authKW | 230528 | 1% | 96% | 113 |
7 | RESISTANCE SWITCHING | authKW | 192886 | 1% | 75% | 120 |
8 | FIELD EMISSION | authKW | 191086 | 3% | 19% | 464 |
9 | RESISTIVE MEMORY | authKW | 188954 | 1% | 88% | 101 |
10 | RESISTIVE RANDOM ACCESS MEMORY | authKW | 169724 | 1% | 92% | 87 |
Web of Science journal categories |
chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | Physics, Applied | 102860 | 53% | 1% | 7888 |
2 | Nanoscience & Nanotechnology | 49275 | 20% | 1% | 3019 |
3 | Engineering, Electrical & Electronic | 23927 | 25% | 0% | 3732 |
4 | Materials Science, Multidisciplinary | 19362 | 28% | 0% | 4073 |
5 | Physics, Condensed Matter | 12452 | 17% | 0% | 2490 |
6 | Microscopy | 11431 | 3% | 1% | 457 |
7 | Materials Science, Coatings & Films | 6936 | 5% | 1% | 792 |
8 | Chemistry, Physical | 2197 | 11% | 0% | 1664 |
9 | Physics, Multidisciplinary | 1618 | 6% | 0% | 960 |
10 | Computer Science, Hardware & Architecture | 1604 | 2% | 0% | 318 |
Address terms |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | ELECT OPTOELECT | 44172 | 0% | 51% | 41 |
2 | NANOFABRICAT NOVEL DEVICES INTEGRATED TECHN | 42662 | 0% | 48% | 42 |
3 | WERKSTOFFE ELEKTROTECH 2 | 42627 | 0% | 42% | 48 |
4 | UMR 6634 | 38987 | 1% | 20% | 90 |
5 | NANOFABRICAT NOVEL DEVICE INTEGRAT | 36288 | 0% | 61% | 28 |
6 | PETER GRUNBERG 7 | 35971 | 0% | 68% | 25 |
7 | MICROELECT | 34064 | 4% | 3% | 542 |
8 | MAT ELECT ENGN INFORMAT TECHNOL 2 | 31285 | 0% | 57% | 26 |
9 | MODERN CIRCUITS INTELLIGENT INFORMAT | 25715 | 0% | 93% | 13 |
10 | ICEAM | 25644 | 0% | 71% | 17 |
Journals |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 88327 | 6% | 5% | 839 |
2 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 44316 | 1% | 11% | 197 |
3 | IEEE ELECTRON DEVICE LETTERS | 37572 | 3% | 4% | 408 |
4 | ULTRAMICROSCOPY | 36157 | 2% | 6% | 313 |
5 | APPLIED PHYSICS LETTERS | 29273 | 9% | 1% | 1271 |
6 | DIAMOND AND RELATED MATERIALS | 15814 | 2% | 3% | 237 |
7 | ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS | 13840 | 0% | 15% | 45 |
8 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 12514 | 2% | 2% | 310 |
9 | JOURNAL DE PHYSIQUE | 11274 | 2% | 2% | 228 |
10 | ORGANIC ELECTRONICS | 10042 | 1% | 3% | 142 |
Author Key Words |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass | LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | RESISTIVE SWITCHING | 1425811 | 5% | 86% | 774 | Search RESISTIVE+SWITCHING | Search RESISTIVE+SWITCHING |
2 | MEMRISTOR | 1026208 | 4% | 73% | 660 | Search MEMRISTOR | Search MEMRISTOR |
3 | RRAM | 625698 | 2% | 91% | 322 | Search RRAM | Search RRAM |
4 | RESISTIVE RANDOM ACCESS MEMORY RRAM | 358638 | 1% | 96% | 176 | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RRAM | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RRAM |
5 | RERAM | 307590 | 1% | 89% | 163 | Search RERAM | Search RERAM |
6 | QUANTUM DOT CELLULAR AUTOMATA | 230528 | 1% | 96% | 113 | Search QUANTUM+DOT+CELLULAR+AUTOMATA | Search QUANTUM+DOT+CELLULAR+AUTOMATA |
7 | RESISTANCE SWITCHING | 192886 | 1% | 75% | 120 | Search RESISTANCE+SWITCHING | Search RESISTANCE+SWITCHING |
8 | FIELD EMISSION | 191086 | 3% | 19% | 464 | Search FIELD+EMISSION | Search FIELD+EMISSION |
9 | RESISTIVE MEMORY | 188954 | 1% | 88% | 101 | Search RESISTIVE+MEMORY | Search RESISTIVE+MEMORY |
10 | RESISTIVE RANDOM ACCESS MEMORY | 169724 | 1% | 92% | 87 | Search RESISTIVE+RANDOM+ACCESS+MEMORY | Search RESISTIVE+RANDOM+ACCESS+MEMORY |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 3 |