Class information for: |
Basic class information |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
1 | 4 | PHYSICS, CONDENSED MATTER//PHYSICS, APPLIED//MATERIALS SCIENCE, MULTIDISCIPLINARY | 2188495 |
215 | 3 | JOURNAL OF CRYSTAL GROWTH//HGCDTE//SOVIET PHYSICS SEMICONDUCTORS-USSR | 51359 |
222 | 2 | JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//GAAS | 20254 |
6708 | 1 | MEV ION IMPLANTATION//COLD IMPLANTS//ELECTRON ANNEALING | 1479 |
Terms with highest relevance score |
rank | Category | termType | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|---|
1 | MEV ION IMPLANTATION | authKW | 64928 | 1% | 38% | 8 |
2 | COLD IMPLANTS | authKW | 42616 | 0% | 100% | 2 |
3 | ELECTRON ANNEALING | authKW | 42616 | 0% | 100% | 2 |
4 | FIS ELECT ELE | address | 42616 | 0% | 100% | 2 |
5 | III N V | authKW | 42616 | 0% | 100% | 2 |
6 | RF DISSIPATION LOSS | authKW | 42616 | 0% | 100% | 2 |
7 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | journal | 35528 | 16% | 1% | 231 |
8 | IMPLANT ISOLATION | authKW | 28409 | 0% | 67% | 2 |
9 | AIIIBV SEMICONDUCTORS | authKW | 27392 | 0% | 43% | 3 |
10 | ELECTRICAL ISOLATION | authKW | 25359 | 0% | 24% | 5 |
Web of Science journal categories |
chi_square_rank | Category | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | Physics, Applied | 10284 | 53% | 0% | 789 |
2 | Nuclear Science & Technology | 7039 | 20% | 0% | 303 |
3 | Instruments & Instrumentation | 4630 | 18% | 0% | 268 |
4 | Physics, Nuclear | 4222 | 16% | 0% | 237 |
5 | Physics, Atomic, Molecular & Chemical | 2085 | 16% | 0% | 232 |
6 | Physics, Condensed Matter | 1388 | 18% | 0% | 261 |
7 | Engineering, Electrical & Electronic | 827 | 16% | 0% | 238 |
8 | Materials Science, Coatings & Films | 651 | 5% | 0% | 77 |
9 | Materials Science, Multidisciplinary | 509 | 16% | 0% | 239 |
10 | Electrochemistry | 115 | 3% | 0% | 45 |
Address terms |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | FIS ELECT ELE | 42616 | 0% | 100% | 2 |
2 | ABT F A1 | 21308 | 0% | 100% | 1 |
3 | DETACHED STRUCT SUB KUZNETSOV SIBERIAN PHYSICO | 21308 | 0% | 100% | 1 |
4 | ESCUELA TECNOL INFORMAT | 21308 | 0% | 100% | 1 |
5 | INFM UNITA ROMAL | 21308 | 0% | 100% | 1 |
6 | JOINT OPEN NUCL ANALY TECHNIQUES | 21308 | 0% | 100% | 1 |
7 | LSI 2 NAKAHARA KU | 21308 | 0% | 100% | 1 |
8 | SEMICOND PROC TECHNOL GRP | 21308 | 0% | 100% | 1 |
9 | URBAN PLANNING ENVIRONM TECHNOL | 21308 | 0% | 100% | 1 |
10 | ELECT ENGN COMP MATH | 14203 | 0% | 33% | 2 |
Journals |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass |
---|---|---|---|---|---|
1 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 35528 | 16% | 1% | 231 |
2 | JOURNAL OF APPLIED PHYSICS | 15228 | 19% | 0% | 278 |
3 | APPLIED PHYSICS LETTERS | 6290 | 12% | 0% | 184 |
4 | RADIATION EFFECTS AND DEFECTS IN SOLIDS | 4318 | 2% | 1% | 31 |
5 | JOURNAL OF ELECTRONIC MATERIALS | 3947 | 3% | 0% | 44 |
6 | RADIATION EFFECTS LETTERS | 3459 | 0% | 3% | 6 |
7 | ELECTRON DEVICE LETTERS | 3455 | 0% | 2% | 7 |
8 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 3151 | 4% | 0% | 56 |
9 | NUCLEAR INSTRUMENTS & METHODS | 2322 | 1% | 1% | 12 |
10 | SOLID-STATE ELECTRONICS | 2271 | 2% | 0% | 33 |
Author Key Words |
chi_square_rank | term | chi_square | shrOfCwithTerm | shrOfTermInClass | termInClass | LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | MEV ION IMPLANTATION | 64928 | 1% | 38% | 8 | Search MEV+ION+IMPLANTATION | Search MEV+ION+IMPLANTATION |
2 | COLD IMPLANTS | 42616 | 0% | 100% | 2 | Search COLD+IMPLANTS | Search COLD+IMPLANTS |
3 | ELECTRON ANNEALING | 42616 | 0% | 100% | 2 | Search ELECTRON+ANNEALING | Search ELECTRON+ANNEALING |
4 | III N V | 42616 | 0% | 100% | 2 | Search III+N+V | Search III+N+V |
5 | RF DISSIPATION LOSS | 42616 | 0% | 100% | 2 | Search RF+DISSIPATION+LOSS | Search RF+DISSIPATION+LOSS |
6 | IMPLANT ISOLATION | 28409 | 0% | 67% | 2 | Search IMPLANT+ISOLATION | Search IMPLANT+ISOLATION |
7 | AIIIBV SEMICONDUCTORS | 27392 | 0% | 43% | 3 | Search AIIIBV+SEMICONDUCTORS | Search AIIIBV+SEMICONDUCTORS |
8 | ELECTRICAL ISOLATION | 25359 | 0% | 24% | 5 | Search ELECTRICAL+ISOLATION | Search ELECTRICAL+ISOLATION |
9 | ACCEPTOR CONTROL | 21308 | 0% | 100% | 1 | Search ACCEPTOR+CONTROL | Search ACCEPTOR+CONTROL |
10 | ALAS GAAS HETEROSTRUCTURES | 21308 | 0% | 100% | 1 | Search ALAS+GAAS+HETEROSTRUCTURES | Search ALAS+GAAS+HETEROSTRUCTURES |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Classes with closest relation at Level 1 |